Zobrazeno 1 - 10
of 71
pro vyhledávání: '"Hee Dong Kang"'
Publikováno v:
IEEE Transactions on Nuclear Science. 56:1046-1050
We present results of design and simulation of the n-substrate reverse type avalanche photodiode (APD), which internally amplifies the photocurrent by an avalanche process, with the diffusion and the epitaxial methods. We aim to develop the APD which
Autor:
Sunghwan Kim, Hwanbae Park, Hong U, Hee-Dong Kang, Sih-Hong Doh, Hongjoo Kim, Joon Il Lee, Do-Sung Kim
Publikováno v:
IEEE Transactions on Nuclear Science. 56:982-985
In this paper, crystal growth and scintillation properties of Rb2CeBr5 crystal are presented. The crystal was grown with the Bridgman method using a two zone transparent furnace. The investigation of scintillation properties of the crystal were perfo
Autor:
Sih-Hong Doh, H. Park, Sang Jun Kang, Hyunghoon Kim, Hee-Dong Kang, Sunghwan Kim, Shinjung Ha
Publikováno v:
IEEE Transactions on Nuclear Science. 56:998-1001
We present the luminescent and scintillation characteristics of CsI:CO3 single crystals. The CsI:CO3 single crystals were grown by using Czochralski method for different concentrations of CO3 from 0.007 to 0.1 mole%. The crystals were cut into a size
Publikováno v:
Journal of the Korean Physical Society. 54:2088-2092
We have developed an embedded Data AcQuisition (DAQ) board which has an Ethernet controller and a charge integrator. We could monitor the beam pro le outside the beam line by using this system with an Ethernet connection. This embedded DAQ board cons
Autor:
Gul Rooh, Jinho Moon, H. Park, Hee-Dong Kang, Kyeryung Kim, H. J. Kim, Sunghwan Kim, Sang-Hoon Lee
Publikováno v:
Journal of the Korean Physical Society. 54:2093-2097
Autor:
H. Park, Sang Jun Kang, Sih-Hong Doh, Hee-Dong Kang, Shinjung Ha, J. H. So, Jinho Moon, Sungwhan Kim, H. J. Kim, Kyeryung Kim
Publikováno v:
Journal of the Korean Physical Society. 54:2102-2108
Autor:
Y. I. Kim, D. H. Kah, H. J. Kim, Hee-Dong Kang, H. O. Kim, Kyeryung Kim, H. Park, HyoJung Hyun
Publikováno v:
Journal of the Korean Physical Society. 54:2066-2070
We designed and fabricated silicon PIN diodes on a 5-in. high resistivity (>5 k cm), (100)orientation, n-type 380 m-thick silicon wafer and developed a diode with an active area of 1.0 1.0 cm 2 . The signal-to-noise ratio (SNR) of the PIN diode with
Autor:
Jinho Moon, Sih-Hong Doh, H. J. Kim, H. Park, Do-Sung Kim, Sang Jun Kang, Hee-Dong Kang, Sunghwan Kim
Publikováno v:
Journal of the Korean Physical Society. 54:2098-2101
Publikováno v:
IEEE Transactions on Nuclear Science. 55:1464-1468
In this paper, we present scintillation properties of the new developed single crystals of BaxSr1-xCl2 for different concentration of x. We manufactured Ba0.12Sr0.88Cl2, Ba0.20Sr0.80Cl2, Ba0.22Sr0.78Cl2 crystals, and CsI(Tl) crystal as reference by u
Publikováno v:
Journal of Nuclear Science and Technology. 45:356-359
A Large size of Φ70 mm × 71 mm (2.1 kg) CdWO4 crystal with excellent quality was studied for the energy response of the crystal to the γ-rays. The large crystal was coupled with a green-extended Photomultiplier tube (PMT) and tested at room temper