Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Hee Ae Lee"'
Autor:
Seong Kuk Lee, Joo-Hyung Lee, Hee Ae Lee, Sung Chul Yi, Hyo Sang Kang, Jae Hwa Park, Won Il Park, Seunghoon Lee
Publikováno v:
Electronic Materials Letters. 17:43-53
We investigated the effects of different thermal treatment conditions on the surface and internal residual strains of bulk GaN grown by hydride vapor phase epitaxy (HVPE). Thermal annealing was performed at 700–1000 °C for 1–5 h in nitrogen atmo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fb9cad51ea0e18ffb0fab8867b2e288a
https://doi.org/10.1007/s13391-020-00252-x
https://doi.org/10.1007/s13391-020-00252-x
Autor:
Won Il Park, Hee Ae Lee, Sung Chul Yi, Jae Hwa Park, Seung Min Kang, Joo-Hyung Lee, Hyo Sang Kang
Publikováno v:
Korean Journal of Metals and Materials. 57:582-588
Chemical mechanical polishing (CMP) of bulk AlN was performed with colloidal silica slurry at pH 9 for different times. The result shows that colloidal silica slurry at pH 9, which has the relatively high surface charge of -50.7 mV is most stable, an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4f48c56d89546968044820420438ca18
https://doi.org/10.3365/kjmm.2019.57.9.582
https://doi.org/10.3365/kjmm.2019.57.9.582
Publikováno v:
Journal of the Korean Crystal Growth and Crystal Technology. 26:159-163
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::377a180cffd286b382937e15788318c4
https://doi.org/10.6111/jkcgct.2016.26.4.159
https://doi.org/10.6111/jkcgct.2016.26.4.159
Autor:
Lee, Hee Ae, Park, Jae Hwa, Lee, Joo Hyung, Lee, Seung Hoon, Kang, Hyo Sang, Lee, Seong Kuk, Park, Won Il, Yi, Sung Chul
Publikováno v:
Electronic Materials Letters; Jan2021, Vol. 17 Issue 1, p43-53, 11p
Autor:
Kang, Hyo Sang, Lee, Joo Hyung, Lee, Hee Ae, Lee, Seung Hoon, Park, Won II, Lee, Seong Kuk, Park, Jae Hwa, Yi, Sung Chul
Publikováno v:
ECS Journal of Solid State Science & Technology; 2019, Vol. 8 Issue 12, pP811-P820, 10p