Zobrazeno 1 - 10
of 15
pro vyhledávání: '"Heber Hernandez-Arriaga"'
Autor:
Akshay Sahota, Harrison Sejoon Kim, Jaidah Mohan, Dan N. Le, Yong Chan Jung, Si Joon Kim, Jang-Sik Lee, Jinho Ahn, Heber Hernandez-Arriaga, Jiyoung Kim
Publikováno v:
AIP Advances, Vol 11, Iss 11, Pp 115213-115213-6 (2021)
In this work, a nano-polycrystalline Ag-doped ZnO-based threshold switching (TS) selector via a facile co-sputtering technique is investigated without using an Ag active metal layer. The effects of the Ag concentration with respect to OFF-state leaka
Externí odkaz:
https://doaj.org/article/b23446ec68ee4627bd08cd91c934ad9d
Autor:
Takashi Onaya, Toshihide Nabatame, Yong Chan Jung, Heber Hernandez-Arriaga, Jaidah Mohan, Harrison Sejoon Kim, Naomi Sawamoto, Chang-Yong Nam, Esther H. R. Tsai, Takahiro Nagata, Jiyoung Kim, Atsushi Ogura
Publikováno v:
APL Materials, Vol 9, Iss 3, Pp 031111-031111-7 (2021)
The change in the interplanar spacing (d-spacing) including the ferroelectric orthorhombic (O) phase in the low-temperature fabricated HfxZr1−xO2 (HZO) films was studied using synchrotron grazing-incidence wide-angle x-ray scattering analysis. The
Externí odkaz:
https://doaj.org/article/50801335661441aabebc8c36c2d13af2
Autor:
Jaidah Mohan, Yong Chan Jung, Heber Hernandez-Arriaga, Jin-Hyun Kim, Takashi Onaya, Akshay Sahota, Su Min Hwang, Dan N. Le, Jiyoung Kim, Si Joon Kim
Publikováno v:
ACS Applied Electronic Materials. 4:1405-1414
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::feef5375bee7b455b95ec7f51e266050
https://doi.org/10.1021/acsaelm.1c01241
https://doi.org/10.1021/acsaelm.1c01241
Autor:
Jang-Sik Lee, Yong Chan Jung, Harrison Sejoon Kim, Akshay Sahota, Dan N. Le, Jinho Ahn, Heber Hernandez-Arriaga, Jaidah Mohan, Jiyoung Kim, Si Joon Kim
Publikováno v:
IEEE Electron Device Letters. 43:21-24
In this letter, a threshold switching (TS) selector with Ag doping-based nano-polycrystalline ZnO switching layer (SL) having (002) preferred orientation has been manifested, without incorporating an active Ag metal layer, using a facile co-sputterin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5e87dee57e9aa912ad0ee6ac1f69924a
https://doi.org/10.1109/led.2021.3130828
https://doi.org/10.1109/led.2021.3130828
Autor:
Yong Chan Jung, Toshihide Nabatame, Heber Hernandez-Arriaga, Naomi Sawamoto, Takahiro Nagata, Takashi Onaya, Jaidah Mohan, Harrison Sejoon Kim, Mari Inoue, Jiyoung Kim, Atsushi Ogura
Publikováno v:
ECS Transactions. 98:63-70
HfxZr1−xO2 (HZO) has been an attractive material for future ferroelectric memory devices because of their high scalability ~10 nm, stable ferroelectricity over a wide Hf:Zr composition range, and compatibility with CMOS manufacturing process. [1] C
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::34edae7e4603bef07c8ef7171b6ff4fd
https://doi.org/10.1149/09803.0063ecst
https://doi.org/10.1149/09803.0063ecst
Autor:
Heber Hernandez-Arriaga, Jaidah Mohan, Yong Chan Jung, Jin-Hyun Kim, Chang-Han Rho, Rino Choi, Jiyoung Kim
Publikováno v:
ECS Meeting Abstracts. :1074-1074
Integrating the HfZrO2 (HZO) on silicon have attracted the attention of researches in the development of ferroelectric field effect transistor (FeFETs) for implementation in high-density memories and neuromorphic devices[1][2]. In this work, it has b
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9c2cf407e9e4da3412cc6639dc9d87ed
https://doi.org/10.1149/ma2022-01191074mtgabs
https://doi.org/10.1149/ma2022-01191074mtgabs
Autor:
Si Joon Kim, Yong Chan Jung, Jaidah Mohan, Hyo Jeong Kim, Sung Min Rho, Min Seong Kim, Jeong Gyu Yoo, Hye Ryeon Park, Heber Hernandez-Arriaga, Jin-Hyun Kim, Hyung Tae Kim, Dong Hyun Choi, Joohye Jung, Su Min Hwang, Harrison Sejoon Kim, Hyun Jae Kim, Jiyoung Kim
Publikováno v:
Applied Physics Letters. 119:242901
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::804b7a2e4904f945ea2c7d84590ea79f
https://doi.org/10.1063/5.0075466
https://doi.org/10.1063/5.0075466
Autor:
Harrison Sejoon Kim, Si Joon Kim, Jinho Ahn, Jiyoung Kim, Heber Hernandez-Arriaga, Yong Chan Jung, Akshay Sahota, Jang-Sik Lee, Dan N. Le, Jaidah Mohan
Publikováno v:
AIP Advances, Vol 11, Iss 11, Pp 115213-115213-6 (2021)
In this work, a nano-polycrystalline Ag-doped ZnO-based threshold switching (TS) selector via a facile co-sputtering technique is investigated without using an Ag active metal layer. The effects of the Ag concentration with respect to OFF-state leaka
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::81490fd28efee373be929c52cdde685b
https://doi.org/10.1063/5.0066311
https://doi.org/10.1063/5.0066311
Autor:
Si Joon Kim, Jiyoung Kim, Jeong Gyu Yoo, Heber Hernandez-Arriaga, Young-In Kim, Jaidah Mohan, Hyo Jeong Kim, Yonghwan An, Yong Chan Jung, Harrison Sejoon Kim
Publikováno v:
physica status solidi (RRL) – Rapid Research Letters. 15:2170020
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4667ee5c8c093b73133711e2825729a0
https://doi.org/10.1002/pssr.202170020
https://doi.org/10.1002/pssr.202170020
Autor:
Jaidah Mohan, Su Min Hwang, Jin-Hyun Kim, Dan N. Le, Jiyoung Kim, Jean François Veyan, Yong Chan Jung, Harrison Sejoon Kim, Si Joon Kim, Heber Hernandez-Arriaga, Rino Choi, Namhoon Kim, Akshay Sahota
Publikováno v:
physica status solidi (RRL) – Rapid Research Letters. 15:2100053
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a7e2527e84b33e3e8b5ff2dd0250b15a
https://doi.org/10.1002/pssr.202100053
https://doi.org/10.1002/pssr.202100053