Zobrazeno 1 - 10
of 140
pro vyhledávání: '"Hebard, Arthur F."'
Autor:
Jiang, Xuanyuan, Brooks, Andrew, Liu, Shuanglong, Koptur-Palenchar, John, Quan, Yundi, Hennig, Richard G., Cheng, Hai-Ping, Zhang, Xiaoguang, Hebard, Arthur F.
We characterize molecular magnet heterojunctions in which sublimated CoPc films as thin as 5 nm are sandwiched between transparent conducting bottom-layer indium tin oxide and top-layer soft-landing eutectic GaIn (EGaIn) electrodes. The roughness of
Externí odkaz:
http://arxiv.org/abs/2204.13152
Autor:
Li, Ang J., Zhu, Xiaochen, Rhodes, Daniel, Samouce, Christopher C., Balicas, Luis, Hebard, Arthur F.
Layered transition metal dichalcogenide (TMD) materials, i.e. 1T-TiSe$_2$ and 2H-NbSe$_2$, harbor a second order charge density wave (CDW) transition where phonons play a key role for the periodic modulations of conduction electron densities and asso
Externí odkaz:
http://arxiv.org/abs/1708.07824
The transition metal dichalcogenide 1T-TaS$_2$ is well known to harbor a rich variety of charge density wave (CDW) distortions which are correlated with underlying lattice atom modulations. The long range CDW phases extend throughout the whole crysta
Externí odkaz:
http://arxiv.org/abs/1704.05938
Understanding the coexistence, competition and/or cooperation between superconductivity and charge density waves (CDWs) in the transition metal dichalcogenides (TMDs) is an elusive goal which, when realized, promises to reveal fundamental information
Externí odkaz:
http://arxiv.org/abs/1703.00869
Publikováno v:
Phys. Rev. B 93, 134205 (2016)
We report a giant linear magnetoelectric coupling in strained BiMnO3 thin films in which the disorder associated with an islanded morphology gives rise to extrinsic relaxor ferroelectricity that is not present in bulk centrosymmetric ferromagnetic cr
Externí odkaz:
http://arxiv.org/abs/1508.01744
Autor:
Miao, Xiaochang, Tongay, Sefaattin, Petterson, Maureen K., Berke, Kara, Rinzler, Andrew G., Appleton, Bill R., Hebard, Arthur F.
Publikováno v:
Nano Letter, 12, 2745(2012)
We demonstrate single layer graphene/n-Si Schottky junction solar cells that under AM1.5 illumination exhibit a power conversion efficiency (PCE) of 8.6%. This performance, achieved by doping the graphene with bis(trifluoromethanesulfonyl)amide, exce
Externí odkaz:
http://arxiv.org/abs/1209.0432
Publikováno v:
Physical Review B 86, 094410 (2012)
Using frequency dependent complex capacitance measurements on thin films of the mixed-valence manganite (La$_{1-y}$Pr$_{y}$)$_{1-x}$Ca$_{x}$MnO$_{3}$, we identify and resolve the individual dielectric responses of two competing dielectric phases. We
Externí odkaz:
http://arxiv.org/abs/1111.1335
Autor:
Singh-Bhalla, Guneeta, Bell, Christopher, Ravichandran, Jayakanth, Siemons, Wolter, Hikita, Yasuyuki, Salahuddin, Sayeef, Hebard, Arthur F., Hwang, Harold Y., Ramesh, Ramamoorthy
Publikováno v:
Nature Physics 7, 80 (2011)
Ionic crystals terminated at oppositely charged polar surfaces are inherently unstable and expected to undergo surface reconstructions to maintain electrostatic stability. Essentially, an electric field that arises between oppositely charged atomic p
Externí odkaz:
http://arxiv.org/abs/1005.4257
Autor:
Rairigh, Ryan P., Singh-Bhalla, Guneeta, Tongay, Sefaatin, Dhakal, Tara, Biswas, Amlan, Hebard, Arthur F.
Thin films of strongly-correlated electron materials (SCEM) are often grown epitaxially on planar substrates and typically have anisotropic properties that are usually not captured by edge-mounted four-terminal electrical measurements, which are prim
Externí odkaz:
http://arxiv.org/abs/cond-mat/0703046
Autor:
Nesbitt, Jeremy R., Hebard, Arthur F.
We present results of a study of tunnel junction aging in which the early time dynamics are captured by in situ monitoring of electrical properties of Al-AlOx-Al planar tunnel junctions beginning when the deposition of the counterelectrode is complet
Externí odkaz:
http://arxiv.org/abs/cond-mat/0511262