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of 3
pro vyhledávání: '"Heather Splawn"'
Autor:
Praneeth Ranga, Arkka Bhattacharyya, Jacob H. Leach, Saurav Roy, Heather Splawn, Sriram Krishnamoorthy
Publikováno v:
IEEE Electron Device Letters. 42:1140-1143
We report a vertical (001) $\beta $ -Ga2O3 field-plated (FP) Schottky barrier diode (SBD) with a novel extreme permittivity dielectric field oxide. A thin drift layer of $1.7~\mu {m}$ was used to enable a punch-through (PT) field profile and very low
Autor:
Balaadithya Uppalapati, Akash Kota, Samee Azad, Lavanya Muthusamy, Binh Tinh Tran, Jacob H. Leach, Heather Splawn, Durga Gajula, Vamsy P. Chodavarapu, Goutam Koley
Publikováno v:
ECS Journal of Solid State Science and Technology. 11:115008
A transparent indium tin oxide (ITO) contact to bulk n-GaN and n-GaN thin film on c-face sapphire with a specific contact resistivity of 8.06 × 10−4 Ω.cm2 and 3.71 × 10−4 Ω.cm2 was measured, respectively. Our studies relied on an RF sputterin
Autor:
John Simon, Malik Hassanaly, K. Udwary, Aaron J. Ptak, Jacob H. Leach, Heather Splawn, Kevin L. Schulte, Hariswaran Sitaraman
Publikováno v:
Journal of Applied Physics. 130:115702
Hydride Vapor Phase Epitaxy (HVPE) is a promising technology that can aid in the cost reduction of III-V materials and devices manufacturing, particularly high-efficiency solar cells for space and terrestrial applications. However, recent demonstrati