Zobrazeno 1 - 10
of 13
pro vyhledávání: '"Heath Pois"'
Autor:
Byung Cheol (Charles) Kang, Michael Lenahan, Mainul Hossain, Naren Yellai, Paul Isbester, Tom Larson, Prasad Dasari, Givantha Iddawela, Mark Klare, Alok Vaid, Wei Ti Lee, Michael Kwan, Matthew Sendelbach, Padraig Timoney, Sridhar Mahendrakar, Heath Pois, Cornel Bozdog, Abner Bello
Publikováno v:
SPIE Proceedings.
Complexity of process steps integration and material systems for next-generation technology nodes is reaching unprecedented levels, the appetite for higher sampling rates is on the rise, while the process window continues to shrink. Current thickness
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b7056ac32abc49758e2e386edc213fe1
https://doi.org/10.1117/12.2220299
https://doi.org/10.1117/12.2220299
Autor:
Timothy J. McArdle, Michael Kwan, Alok Vaid, Mark Klare, Heath Pois, Ganesh Subramanian, Wei Ti Lee, Jeremy A. Wahl, Ying Wang, Dina H. Triyoso, Mainul Hossain, Abner Bello, Tom Larson
Publikováno v:
SPIE Proceedings.
Planar fully-depleted silicon-on-insulator (FDSOI) technology potentially offers comparable transistor performance as FinFETs. pFET FDOSI devices are based on a silicon germanium (cSiGe) layer on top of a buried oxide (BOX). Ndoped interfacial layer
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::22e9bf11b429ab3dd92f26a97b56056e
https://doi.org/10.1117/12.2219748
https://doi.org/10.1117/12.2219748
Autor:
Jennifer Fullam, Wei Ti Lee, Bing Sun, Srinivasan Rangarajan, Saiqa Farhat, Ying Wang, Mike Kwan, Mark Klare, Heath Pois, Nicolas Loubet, Qing Liu, Sylvian Maitrejean, Tom Larson, B. Lherron, Romain Wacquez, John G. Gaudiello
Publikováno v:
25th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC 2014).
The thickness and composition determination of Silicon-Germanium (SiGe) films have been demonstrated using simultaneous X-ray Photoelectron (XPS) and X-ray Fluorescence (XRF) measurements. Measurements of SiGe films in various applications were explo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0a931f34e01a4b9e7daa7d2f49e9524b
https://doi.org/10.1109/asmc.2014.6846971
https://doi.org/10.1109/asmc.2014.6846971
Autor:
Lena Nicolaides, Jon Opsal, InKyo Kim, Heath Pois, Jang-Ik Park, Jung-Wook Kim, Chung-sam Jun
Publikováno v:
SPIE Proceedings.
A new application for ultra-fast and repeatable in-die determination of CD structures at the ∼1 μm length scale using the BPR®/BPE® (Beam Profile Reflectometry/Ellipsometry) technologies on the Opti-Probe® OP9000 series system, is presented and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8c058006a6aebf8030c4933025b16496
https://doi.org/10.1117/12.712516
https://doi.org/10.1117/12.712516
Publikováno v:
SPIE Proceedings.
In this study, the optical properties of amorphous carbon (aC) ARC films are investigated using an Opti-probe OP7341, and a metrology solution that robustly measures a broad range of process conditions is presented. We find that the aC material is co
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0e321b53e57b7cad55f395ac53f02bc0
https://doi.org/10.1117/12.600138
https://doi.org/10.1117/12.600138
Publikováno v:
SPIE Proceedings.
A selection of thin Si layers grown epitaxially upon thick relaxed SiGe films were measured using the combination of optical metrology techniques available on the Opti-Probe 7341 system. The techniques used included in particular (i) angle resolved l
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::93262e09a87db0c78877aa7a17ae3aca
https://doi.org/10.1117/12.600035
https://doi.org/10.1117/12.600035
Publikováno v:
SPIE Proceedings.
Spectra of contact hole arrays with target diameters ranging from 106 to 131 nm and pattern pitch ranging from 220 to 300 nm are taken from an off-axis (65°) rotating compensator spectroscopic ellipsometry (RCSE).[1] 3-dimensional finite difference
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f5d75fd9fda1e5c0d1d36dcdb9656f05
https://doi.org/10.1117/12.598955
https://doi.org/10.1117/12.598955
Publikováno v:
MRS Proceedings. 872
We demonstrate that a multi-technology approach enables the accurate characterization of the thickness and optical properties of Amorphous Carbon (α-C) films used in semiconductor manufacturing. Because the material is found to be highly birefringen
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::febabb2ede1344c6cd1ed91e67c281e4
https://doi.org/10.1557/proc-872-j17.5
https://doi.org/10.1557/proc-872-j17.5
Publikováno v:
AIP Conference Proceedings.
We demonstrate that by using a multi‐technology optical metrology platform, accurate and precise measurements may be obtained for both thickness and stoichiometry of advanced Gate materials, including in particular Nitrided Oxide and Hafnium Silica
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e05b00fa273cd8aa89c7797a8821f702
https://doi.org/10.1063/1.2062949
https://doi.org/10.1063/1.2062949
Autor:
Curry Scheirer, Boon Lay Tan, Kevin Peterlinz, Jacky Huang, Robert Jones, Shahin Zangooie, Stephen Morris, Dong Kyun Sohn, Heath Pois, JinPing Liu
Publikováno v:
AIP Conference Proceedings.
Graded Si1−xGex structures have been measured with good accuracy, stability and tool‐tool matching by utilizing different measurement methods in one system (Opti‐Probe®). The measurement methods utilized are (i) laser reflectivity versus angle
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::026ea7de4889913997f7e6473d88daec
https://doi.org/10.1063/1.1622477
https://doi.org/10.1063/1.1622477