Výsledky vyhledávání - "Heang-Seuk Lee"

Plasma surface treatments by using a dielectric barrier discharge for the deposition of diamond films

Autor: Heang-Seuk Lee, In-Je Kang, M. G. Ko, Jong-Keun Yang

Publikováno v: Journal of the Korean Physical Society. 63:199-205

For plasma surface treatments at atmospheric pressure, a 2 kW dielectric barrier discharge (DBD) source was developed. It was investigated via an optical emission spectroscopy (OES), an IR camera and volt-ampere meters with a computer. It was confirm

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::262907ce2d6168d2debbb283c169326a
https://doi.org/10.3938/jkps.63.199

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Morphology and structural properties of nanocrystalline and nanocolumnar aluminum thin films grown on glass and Ti/glass substrates

Autor: Akbar I. Inamdar, S. K. Sharma, Bo-Gyun Kim, Hyunsik Im, Chi Kyu Choi, Heang-Seuk Lee

Publikováno v: Journal of the Korean Physical Society. 60:1491-1497

Nanocrystalline and nanocolumnar aluminum thin films were deposited on glass and Ti/glass substrates at normal and oblique angles of incidence in vacuum (1.0 × 10−6 Torr) by using an electron-beam evaporator. The average grain size of the Al thin

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::8d7a71ce502f6e211ab90a5b0e6ac460
https://doi.org/10.3938/jkps.60.1491

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UV irradiation effects on the bonding structure and electrical properties of ultra low-k SiOC(–H) thin films for 45 nm technology node

Autor: Myung Taek Hyun, Won Young Jeung, Chi Kyu Choi, Rangaswamy Navamathavan, Jong-Kwan Woo, Heon-Ju Lee, Chang Young Kim, Heang Seuk Lee

Publikováno v: Current Applied Physics. 11:S109-S113

Low-dielectric-constant SiOC(–H) thin films were deposited on p -type Si(100) substrates using plasma enhanced chemical vapor deposition (PECVD) from vinyltrimethylsilane (VTMS; CH 2 = CHSi(CH 3 ) 3 ) and oxygen gas as precursors. To improve the st

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::605bccfedc4ac366d1ac60f3eed0ec02
https://doi.org/10.1016/j.cap.2011.05.004

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Ultraviolet irradiation effect on the properties of leakage current and dielectric breakdown of low-dielectric-constant SiOC( H) films using comb capacitor structure

Autor: Won Young Jeung, Chi Kyu Choi, Jong-Kwan Woo, Chang Young Kim, Heang Seuk Lee, Kwang-Man Lee, Rangaswamy Navamathavan, Myung Taek Hyun

Publikováno v: Thin Solid Films. 519:6732-6736

Low-dielectric constant SiOC( H) films were deposited on p -type Si(100) substrates by plasma-enhanced chemical-vapor deposition (PECVD) using dimethyldimethoxy silane (DMDMS, C 4 H 12 O 2 Si) and oxygen gas as precursors. To improve the physicochemi

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::6b1b6549b21151c5357860187d546e70
https://doi.org/10.1016/j.tsf.2011.04.058

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Frequency-dependent Capacitance-Voltage and Conductance-Voltage Characteristics of Low-dielectric-constant SiOC(-H) Thin Films Deposited by Using Plasma-enhanced Chemical Vapor Deposition

Autor: Jong-Kwan Woo, Chang Young Kim, R. Navamathavan, Myung Taek Hyun, Chi Kyu Choi, Heang Seuk Lee, Kwang-Man Lee

Publikováno v: Journal of the Korean Physical Society. 57:1976-1982

We report on the electrical characteristics of the metal-insulator-semiconductor (MIS) structure of low-dielectric-constant SiOC(-H) films. SiOC(-H) thin films were deposited on p-Si(100) substrates by using a plasma-enhanced chemical vapor depositio

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::99d52d4f4372bfbe6b85751d9dd5d19c
https://doi.org/10.3938/jkps.57.1976

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Study of Cu diffusion behavior in low dielectric constant SiOC(–H) films deposited by plasma-enhanced chemical vapor deposition

Autor: Rangaswamy Navamathavan, Jong-Kwan Woo, Chang Young Kim, Chi Kyu Choi, Heang Seuk Lee

Publikováno v: Thin Solid Films. 518:6474-6477

Carbon doped silicon oxide (SiOCH) thin films deposited using plasma-enhanced chemical vapor deposition (PECVD) are commonly used in multilevel interconnect applications. To enhance the electrical performance, the deposited SiOC(–H) films were anne

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::f275efe019138f000e6ea24818aab1f4
https://doi.org/10.1016/j.tsf.2010.02.050

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Effect of evaporated copper and aluminum on post-annealed SiOC(–H) films deposited using plasma-enhanced chemical vapor deposition

Autor: Chang Young Kim, Rangaswamy Navamathavan, Heang Seuk Lee, Jong-Kwan Woo, Chi Kyu Choi

Publikováno v: Thin Solid Films. 518:6469-6473

Low dielectric constant SiOC(–H) films were deposited on p-type Si(100) substrates by plasma-enhanced chemical vapor deposition (PECVD) using dimethyldimethoxysilane (DMDMOS, C4H12O2Si) and oxygen gas as precursors. We studied the detailed electric

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::1cf93900813b19c89a87b3ec4dd6a6e9
https://doi.org/10.1016/j.tsf.2010.02.051

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? Electrical conduction in low dielectric constant SiOC(-H) films with nano-pore structure using dimethyldimethoxysilane /O2 precursors deposited by plasma-enhanced chemical vapor deposition

Autor: Jong Kwan Woo, Chang Young Kim, Kwang Man Lee, R. Navamathavan, Heang Seuk Lee, Chi Kyu Choi

Publikováno v: Journal of the Korean Physical Society. 56:1478-1483

The interconnection of copper (Cu) with low-dielectric-constant interlayer films (low-k) is crucial to improving integrated circuit performance. Integration challenges with new ultra-low-k generation materials include electrical-property and reliabil

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::3fc19f2d39134bec8e95ca06a9eeda22
https://doi.org/10.3938/jkps.56.1478

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