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Publikováno v:
IEEE Transactions on Electron Devices; 1984, Vol. 31 Issue 8, p1100-1103, 4p
Publikováno v:
IEEE Transactions on Electron Devices. 31:1100-1103
The fabrication and optimization of ohmic contacts to GaAs prepared by heating the wafers on a hot plate is described. The method offers high throughput and is production adaptable. The apparatus consists of a hot plate constructed of a heat pipe wit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2e0fb3ca085992520f32d97f0920b64b
https://doi.org/10.1109/t-ed.1984.21670
https://doi.org/10.1109/t-ed.1984.21670