Zobrazeno 1 - 10
of 17
pro vyhledávání: '"He-xiang Han"'
Publikováno v:
Energy & Fuels. 32:11055-11066
Novel graphitizable pitches with controllable softening points and methylene-bridged structures were successfully prepared through photobromination of 1-methylnaphthalene (1-MNa) followed by closed-system dehydrobromination (CSD). The structures of b
Publikováno v:
New Carbon Materials. 33:203-212
Novel high-carbon-yield pitches were prepared through the iodination of 1-methylnaphthalene (1-MNP) followed by dehydroiodination/polycondensation. 1-MNP was first iodinated by I2 with the aid of I2O5, yielding mainly 1-iodo-4-MNP. Then, a thermal-de
Autor:
He-Xiang Han, Zhaoping Wang, Jan-Olle Malm, Reine Wallenberg, Gohau Li, Jan-Olov Bovin, Wei Chen, Yining Huang
Publikováno v:
Journal of Luminescence. 91:139-145
The photoluminescence of Mn2+ in ZnS:Mn2+ nanoparticles with an average size of 4.5 nm has been measured under hydrostatic pressure from 0 to 6 GPa. The emission position is red-shifted at a rate of -33.3+/-0.6meV/GPa, which is in good agreement with
Autor:
Guo Hua Li, Yi Cao, Jing Rong Chen, Bao Wen Zhang, Xu Rui Xiao, Zao Pin Wang, He Xiang Han, Feng Yin, Xue Ping Li
Publikováno v:
Journal of Photochemistry and Photobiology A: Chemistry. 112:59-61
The photoluminescence of porous silicon can be modified sensitively by surface adsorption of different kinds of molecules. A quite different effects of 9-cyanoanthracene and anthracene adsorption on the photoluminescence of porous silicon were observ
The GaSb and Ga0.62In0.38Sb nanocrystals were embedded in the SiO2 films by radio-frequency magnetron co-sputtering and were grown on GaSb and Si substrates at different temperatures. We present results on the 10K excitonic photoluminescence (PL) pro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::407a0c83618edd7f04c5e5d5b8380e6e
http://arxiv.org/abs/cond-mat/0204296
http://arxiv.org/abs/cond-mat/0204296
Publikováno v:
Third International Conference on Thin Film Physics and Applications.
The luminescent nanocrystal Ge embedded in a-SiO2 matrix was prepared by thermal oxidation of a-Si1-xGex:H films under conventional conditions. It was found that nc-Ge were formed through the selective oxidation of Si in a-GexSi1-x:H alloys and preci
Publikováno v:
SPIE Proceedings.
(GaAs)6(AlAs)6 sample was grown on [001]-oriented semi-insulating GaAs substrate by MBE. The Raman scattering was measured at room temperature and under off- and in-resonance conditions. The GaAs even and odd modes were observed in the polarized and
Publikováno v:
Light Scattering in Semiconductor Structures and Superlattices ISBN: 9781489936974
It is weL.L. known from the phonon dispersion curves of bulk GaAs and AlAs that though their acoustic branches basically overlap, the optical branches do not. As a consequence, in GaAs/AlAs superlattices the acoustic phonon modes are the folded modes
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::91f4f6f251b0f0e89aaebbbd980508a5
https://doi.org/10.1007/978-1-4899-3695-0_7
https://doi.org/10.1007/978-1-4899-3695-0_7
Publikováno v:
Quantum Well and Superlattice Physics III.
The samples of (GaAs) (AlAs) superlattices (SLs) were grown by MIBE method on (001)-orientedsemi-thsulathg GaAs substrates. The photoluminescence (PL) was measured at 77 K and under hydrostaticpressure in the range of 0- 30 Kbar. The dependence of th
Publikováno v:
Solid State Communications. 71:801-803
Amorphous carbon nitride iron-containing thin films have been grown from the plasma decomposition of a feedstock of CH4, N2, and H2. From Auger Electron Spectroscopy, these films contain C, N, O, Fe and a small amount of Cr and Ni. The presence of Fe