Zobrazeno 1 - 5
of 5
pro vyhledávání: '"He-Ting Tsai"'
Autor:
Chih-Chiang Wang, An-Ya Lo, Ming-Che Cheng, Yu-Sung Chang, Han-Chang Shih, Fuh-Sheng Shieu, Tzu-Hsien Tseng, He-Ting Tsai
Publikováno v:
Scientific Reports, Vol 14, Iss 1, Pp 1-10 (2024)
Abstract Amorphous indium tin zinc oxide (a-ITZO)/Bi2Se3 nanoplatelets (NPs) were fabricated using a two-step procedure. First, Bi2Se3 NPs were synthesized through thermal chemical vapor deposition at 600 °C on a glass substrate, and then a-ITZO was
Externí odkaz:
https://doaj.org/article/09b2a066fcbc434ead1b8b60217e3727
Autor:
Chih-Chiang Wang, An-Ya Lo, Ming-Che Cheng, Yu-Sung Chang, Han-Chang Shih, Fuh-Sheng Shieu, He-Ting Tsai
Publikováno v:
Scientific Reports, Vol 13, Iss 1, Pp 1-10 (2023)
Abstract ZnO/carbon-black heterostructures were synthesized using a sol–gel method and crystallized by annealing at 500 °C under 2 × 10−2 Torr for 10 min. The crystal structures and binding vibration modes were determined by XRD, HRTEM, and Ram
Externí odkaz:
https://doaj.org/article/655898dfc4dc4f41b46530e375ae15eb
Publikováno v:
Nanomaterials, Vol 13, Iss 3, p 539 (2023)
A sputtered FePt(BN, Re, C) film, here boron nitride (BN), was compared to a reference sample FePt(BN, Ag, C). Intrinsically, these films illustrate a high anisotropy field (Hk) and perpendicular magnetocrystalline anisotropy (Ku),although the refere
Externí odkaz:
https://doaj.org/article/fe9df2ce80b14e5883b27a094abbf108
Publikováno v:
Nanomaterials, Vol 12, Iss 5, p 874 (2022)
BN is the currently required segregant for perpendicular FePt media. We found that BN can be diffused from the MgTiOBN intermediate layer during a high temperature process. The FePtCAg film sputtered on MgTiOBN layers illustrates higher perpendicular
Externí odkaz:
https://doaj.org/article/b7ab462403414db9b55507217c5c2c7f
Autor:
Guan-Yu Lin, Kai-Chung Cheng, Hsiung-Hsing Lu, Chia-Yu Chen, Shou-Wei Fang, He-Ting Tsai, Yu-Hsin Lin, Yu-Hung Chen, Tsung-Hsiang Shih, Chih-Yuan Lin, Chin-Wei Yang, Hsin-Hung Li, Lung-Pao Hsin, Chien-Tao Chen, Chun-Ming Yang, Jen-Yu Lee
Publikováno v:
Solid-State Electronics. 73:74-77
We have successfully fabricated large sized amorphous indium–gallium–zinc-oxide based active-matrix liquid-crystal displays, which uses Molybdenum/Aluminum/Titanium as source/drain electrode. In this study, an oxygen-rich etch stop layer acts as
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7d6a15563e219806b553ca84c94173be
https://doi.org/10.1016/j.sse.2012.04.001
https://doi.org/10.1016/j.sse.2012.04.001