Zobrazeno 1 - 8
of 8
pro vyhledávání: '"He-Mei Zheng"'
Publikováno v:
Nanoscale Research Letters, Vol 13, Iss 1, Pp 1-8 (2018)
Abstract Atomic-layer-deposition (ALD) of In2O3 nano-films has been investigated using cyclopentadienyl indium (InCp) and hydrogen peroxide (H2O2) as precursors. The In2O3 films can be deposited preferentially at relatively low temperatures of 160–
Externí odkaz:
https://doaj.org/article/8a03493bfaca4b88a084287f9eebaa5b
Autor:
Hao Zhang, Han Jun, Kah-Wee Ang, Qing-Qing Sun, Weiguo Liu, Wen-Jun Liu, Shi-Jin Ding, Huan Liu, He-Mei Zheng, David Wei Zhang
Publikováno v:
Nanophotonics, Vol 9, Iss 7, Pp 2053-2062 (2020)
Black phosphorus (BP) shows great potential in electronic and optoelectronic applications; however, maintaining the stable performance of BP devices over temperature is still challenging. Here, a novel BP field-effect transistor (FET) fabricated on t
Autor:
Yarong Wang, David Wei Zhang, Yan Shao, Wen-Jun Liu, Bao Zhu, He-Mei Zheng, Qian Ma, Shi-Jin Ding
Publikováno v:
IEEE Electron Device Letters. 39:1672-1675
To improve the electrical performance of thin-film transistors with an atomic-layer-deposited Al2O3 dielectric/InOx channel, O2 plasma surface treatments of the InOx back channel are explored in comparison with thermal annealing. It is demonstrated t
Autor:
J. Gao, Shun-Ming Sun, Bao Zhu, Wen-Jun Liu, David Wei Zhang, Hai-Sheng Lu, Qian Ma, Yung-Cheng Wang, He-Mei Zheng, S. J. Ding
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 6, Pp 320-324 (2018)
Ambient instability has been proven challenging in black phosphorus field-effect transistors (BP FETs) and a capping layer is thus needed for their practical applications. In this paper, we have examined the effects of Al2O3 capping and O2 post-annea
Autor:
Peng Zhou, B. B. Wu, Y. Q. Ding, David Wei Zhang, S. J. Ding, Q. Q. Sun, He-Mei Zheng, Hai-Sheng Lu, Liang-Yao Chen, Wen-Jun Liu
Publikováno v:
Nanoscale Research Letters, Vol 12, Iss 1, Pp 1-6 (2017)
Growing high-quality and uniform dielectric on black phosphorus is challenging since it is easy to react with O2 or H2O in ambient. In this work, we have directly grown Al2O3 on BP using plasma-enhanced atomic layer deposition (PEALD). The surface ro
Publikováno v:
Nanoscale Research Letters, Vol 13, Iss 1, Pp 1-8 (2018)
Nanoscale Research Letters
Nanoscale Research Letters
Atomic-layer-deposition (ALD) of In2O3 nano-films has been investigated using cyclopentadienyl indium (InCp) and hydrogen peroxide (H2O2) as precursors. The In2O3 films can be deposited preferentially at relatively low temperatures of 160–200 °C,
Autor:
Wen-Jun Liu, Jian-Guo Yang, Hao Liu, Ya-Wei Huan, Shun-Ming Sun, He-Mei Zheng, Bao Zhu, Shi-Jin Ding
Publikováno v:
Chinese Physics Letters. 35:127302
Autor:
He-Mei Zheng, Shun-Ming Sun, Hao Liu, Ya-Wei Huan, Jian-Guo Yang, Bao Zhu, Wen-Jun Liu, Shi-Jin Ding
Publikováno v:
Chinese Physics Letters; Dec2018, Vol. 35 Issue 12, p1-1, 1p