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pro vyhledávání: '"He-Chun Zhou"'
Publikováno v:
Nanomaterials, Vol 11, Iss 10, p 2705 (2021)
Herein, Bi4Ti3O12 (BIT) ferroelectric thin films were fabricated into Au/BIT/LaNiO3/Si structures to demonstrate their memristor properties. Repeatable and stable bipolar resistive switching (RS) characteristics of the device are first reported in th
Externí odkaz:
https://doaj.org/article/c9d2fbb37b4e41ea8b15c83d9a335a8a
Autor:
Yan-Ping Jiang, He-Chun Zhou, Xin-Gui Tang, Wen-Hua Li, Xiao-Bin Guo, Zhen-Hua Tang, Qiu-Xiang Liu
Publikováno v:
Journal of Electronic Materials. 52:188-195
Publikováno v:
Nanomaterials
Volume 11
Issue 10
Nanomaterials, Vol 11, Iss 2705, p 2705 (2021)
Volume 11
Issue 10
Nanomaterials, Vol 11, Iss 2705, p 2705 (2021)
Herein, Bi4Ti3O12 (BIT) ferroelectric thin films were fabricated into Au/BIT/LaNiO3/Si structures to demonstrate their memristor properties. Repeatable and stable bipolar resistive switching (RS) characteristics of the device are first reported in th