Improved trade-off characteristics of 3.3kV fast recovery diode with optimized carrier distribution used for power systems

Autor: Jin Rui, He Yanqiang, Xu Zhe, Wu Di, Liu Yueyang, He Feng, Wen Jialiang, Dong Shaohua, Zhao Yan, Pan Yan

Publikováno v: 2017 International Conference on Circuits, Devices and Systems (ICCDS).

This paper presents an innovative method to optimize the excess carrier distribution in 3.3kV fast recovery diodes (FRDs). The idea is to develop a structure that can effectively optimize the anode emission efficiency. Based on TCAD simulation, two n

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::bdd517228cde9e6b057a0faa3a68f596
https://doi.org/10.1109/iccds.2017.8120444

The failure of VDMOS device caused by the mismatch of coefficient of thermal expansion

Autor: Hua Qing, Xu Dan, He Yanqiang, Cao Yijiang, Song Mingxin, Yin Jinghua

Publikováno v: 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology.

VDMOS device (Vertical Double-diffused Metal Oxide Semiconductor) has the features of higher input impedance, lower drive current, higher switching speed, better frequency characteristic, bigger safety operating area and better thermal stability, whi

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::869b5cb22a6662aa7d15d8211079338b
https://doi.org/10.1109/icsict.2010.5667318

Research on the failure property of VDMOS device by thermal cycles.

Autor: Yin Jinghua, Hua Qing, He Yanqiang, Cao Yijiang, Chen Minghua, Liu Ting, Liu Xiaowei

Publikováno v: 2011 12th International Conference on Thermal, Mechanical & Multi-Physics Simulation & Experiments in Microelectronics & Microsystems (EuroSimE); 2011, p1/4-4/4-4/4, 1p