Zobrazeno 1 - 6
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pro vyhledávání: '"He, Kaiting"'
Autor:
Qiang Wu, Weiming He, He Kaiting, Yi-Shih Lin, Yuntao Jiang, Guogui Deng, Lihong Xiao, Bin Xing, Jingan Hao, Qiang Zhang, Xuelong Shi, Chang Liu
Publikováno v:
SPIE Proceedings.
In this paper, we present a study on the overlay (OVL) shift issue in contact (CT) layer aligned to poly-silicon (short as poly) layer (prior layer) in an advanced technology node [1, 2]. We have showed the wafer level OVL AEI-ADI shift (AEI: After E
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d9d374cc0ba8462d90527884a8322d5d
https://doi.org/10.1117/12.2220013
https://doi.org/10.1117/12.2220013
Akademický článek
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Autor:
Sanchez, Martha I., Ukraintsev, Vladimir A., Deng, Guogui, Hao, Jingan, Xiao, Lihong, Xing, Bin, Jiang, Yuntao, He, Kaiting, Zhang, Qiang, He, Weiming, Liu, Chang, Lin, Yi-Shih, Wu, Qiang, Shi, Xuelong
Publikováno v:
Proceedings of SPIE; March 2016, Vol. 9778 Issue: 1 p97782C-97782C-13, 9680432p
Publikováno v:
American Journal of Physical Medicine & Rehabilitation; Feb2020, Vol. 99 Issue 2, p99-108, 10p
Publikováno v:
2015 China Semiconductor Technology International Conference; 2015, p1-18, 18p
Autor:
Qingxin Yang, Jian Li
This book contains the original and refereed research papers presented at the 11th Frontier Academic Forum of Electrical Engineering (FAFEE 2024) held in Chongqing, China. Topics covered include: Power System and New Energy; Motors and Systems; Power
