Zobrazeno 1 - 10
of 20
pro vyhledávání: '"Hcm Harm Knoops"'
Publikováno v:
ECS Journal of Solid State Science and Technology, 4(6), NS-023/032. Electrochemical Society, Inc.
ECS Journal of Solid State Science and Technology, 6, 4, N5023-N5032
ECS Journal of Solid State Science and Technology, 6, 4, N5023-N5032
Current trends in semiconductor device manufacturing impose extremely stringent requirements on nanoscale processing techniques, both in terms of accurately controlling material properties and in terms of precisely controlling nanometer dimensions. T
Autor:
Marcel A. Verheijen, Hcm Harm Knoops, Wmm Erwin Kessels, Fred Roozeboom, Ijm Ivo Erkens, W. Keuning
Publikováno v:
Journal of Chemical Physics, 5, 146
Journal of Chemical Physics, 146(5):052818. American Chemical Society
Journal of Chemical Physics, 146(5):052818. American Chemical Society
To date, conventional thermal atomic layer deposition (ALD) has been the method of choice to deposit high-quality Pt thin films grown typically from (MeCp)PtMe3 vapor and O2 gas at 300 °C. Plasma-assisted ALD of Pt using O2 plasma can offer several
Publikováno v:
Chemistry of Materials, 25, 4619-4622
Chemistry of Materials, 25(22), 4619-4622. American Chemical Society
Chemistry of Materials, 25(22), 4619-4622. American Chemical Society
Atomic layer deposition offers the unique opportunity to control, at the atomic level, the 3D distribution of dopants in highly uniform and conformal thin films. Here, it is demonstrated that the maximum doping efficiency of Al in ZnO can be improved
Publikováno v:
Journal of the Electrochemical Society, 160(5), A3066-A3071. Electrochemical Society, Inc.
One of the remaining challenges in the field of portable electronics is the miniaturization of lithium-ion batteries. To prepare all-solid-state batteries with a sufficient high storage capacity it is vital to prepare high quality thin films for batt
Publikováno v:
Journal of Power Sources, 203, 72-77. Elsevier
Cobalt oxide thin films have been deposited with remote plasma atomic layer deposition (ALD) within a wide temperature window (100–400 °C), using CoCp 2 as cobalt precursor and with a remote O 2 plasma as oxidant source. The growth rate was relati
Autor:
Ijm Ivo Erkens, Wmm Erwin Kessels, Ajm Adrie Mackus, van de Thm Tijn Ven, Fred Roozeboom, P Smits, Hcm Harm Knoops
Publikováno v:
ECS Journal of Solid State Science and Technology, 1(6), 255-262. Electrochemical Society, Inc.
Insights into the temperature dependence of atomic layer deposition (ALD) of Pt using (methylcyclopentadienyl)trimethylplatinum, (MeCp)PtMe3, precursor and O2 are presented, based on a study of reaction products by time-resolved quadrupole mass spect
Publikováno v:
ECS Transactions, 41(2), 321-330. Electrochemical Society, Inc.
One of the remaining challenges in the field of portable electronics is the miniaturization of lithium-ion batteries without decreasing their storage capacity. To tackle this challenge and to effectively integrate battery technology in even a wider v
Autor:
ME Merijn Donders, Phl Peter Notten, Jfm Jos Oudenhoven, van de Mcm Richard Sanden, Hcm Harm Knoops, Wmm Erwin Kessels, Loïc Baggetto
Publikováno v:
ECS Transactions. 33:213-222
Current trends in device miniaturization and portability put strong requirements on energy storage devices with a high power to volume ratio. Li-ion all-solid-state batteries are very attractive as they combine a high storage capacity with the possib
Autor:
Wmm Erwin Kessels, Ajm Adrie Mackus, van de Mcm Richard Sanden, Hcm Harm Knoops, E Erik Langereis, Sbs Stephan Heil
Publikováno v:
Journal of Vacuum Science and Technology A: Vacuum, Surfaces, and Films, 28(1), 77-87. AVS Science and Technology Society
In this note it is demonstrated that optical emission spectroscopy (OES) is an easy-to-implement and valuable tool to study, optimize, and monitor thin film growth by plasma-assisted atomic layer deposition (ALD). The species in the plasma can be ide
Publikováno v:
Journal of the Electrochemical Society, 157(12), G241-G249. Electrochemical Society, Inc.
For plasma-assisted atomic layer deposition (ALD), reaching conformal deposition in high aspect ratio structures is less straightforward than for thermal ALD due to surface recombination loss of plasma radicals. To obtain a detailed insight into the