Zobrazeno 1 - 10
of 5 526
pro vyhledávání: '"Hbt"'
Autor:
John Suarez
Publikováno v:
e-Prime: Advances in Electrical Engineering, Electronics and Energy, Vol 10, Iss , Pp 100827- (2024)
This paper details the first-known experimental observation of pulse-width modulation at 100 MHz using silicon-germanium HBT technology. By performing pulse-width modulation (PWM) at a higher frequency, undesired harmonic-components—which are inter
Externí odkaz:
https://doaj.org/article/559bb1feb0b1436b812527cff67ea776
Autor:
Sebastien Fregonese, Thomas Zimmer
Publikováno v:
IEEE Journal of Microwaves, Vol 4, Iss 3, Pp 381-388 (2024)
This work focuses on a novel methodology to establish on-wafer calibration standards for the 16-Term Error Calibration Technique. It combines TRL-calibrated data with EM simulation to precisely generate S-parameters of standards. Applied to the advan
Externí odkaz:
https://doaj.org/article/18f2b9c682a545bdb8be2cc639d84118
Autor:
LIN Shaoheng
Publikováno v:
Guangtongxin yanjiu, Pp 57-63 (2023)
【Objective】For the implementation of Trans Impedance Amplifier (TIA) in 400 Gbit/s Dual Polarization (DP)– 16 Quadrature Amplitude Modulation (QAM) coherent receiver.【Methods】A 64 GBaud dual channels differential linear TIA in advanced Sili
Externí odkaz:
https://doaj.org/article/db6feb1a1d344ed181cc99a52b88f404
Publikováno v:
Alexandria Engineering Journal, Vol 81, Iss , Pp 46-54 (2023)
The proposed antenna introduces a wideband double-resonance substrate-integrated waveguide (SIW) cavity-backed slot antenna with shorting vias. The antenna is compact and has a wide frequency range. By loading the SIW cavity slot with shorting pin/vi
Externí odkaz:
https://doaj.org/article/cf253ca9460a4207afe88e740de9bc0d
Publikováno v:
Известия высших учебных заведений России: Радиоэлектроника, Vol 26, Iss 3, Pp 6-31 (2023)
Introduction. The characteristics of solid-state microwave switches are subject to different requirements depending on the application area and technical problems to be solved. No versatile solution exists that could satisfy all requirements at once.
Externí odkaz:
https://doaj.org/article/db733ef4c8ad4a44a67b46c38258a3ff
Publikováno v:
Sensor Review, 2022, Vol. 42, Issue 6, pp. 725-732.
Externí odkaz:
http://www.emeraldinsight.com/doi/10.1108/SR-03-2022-0161
Publikováno v:
IEEE Access, Vol 11, Pp 38002-38009 (2023)
In this paper, the scattering parameter (S-parameter) modeling method for heterojunction bipolar transistor (HBT) at different temperatures is investigated. S-parameters of HBT at different temperatures are randomly divided into training and testing
Externí odkaz:
https://doaj.org/article/3298481eb92d4ab3a0ab89a7be12f872
Autor:
Hansik Oh, Jaekyung Shin, Hyeongjin Jeon, Young Yun Woo, Keum Cheol Hwang, Kang-Yoon Lee, Youngoo Yang
Publikováno v:
IEEE Access, Vol 11, Pp 25879-25892 (2023)
This paper presents a 2.8-3.8 GHz broadband 2-stage fully differential Doherty power amplifier using direct interstage power division based on a 2- $\mu \text{m}$ InGaP/GaAs HBT process for 5G new radio handset applications. A compact transformer-les
Externí odkaz:
https://doaj.org/article/189291a661444940bac626241146eb83
Publikováno v:
IEEE Access, Vol 11, Pp 14487-14499 (2023)
In this paper, we perform a comparative analysis between stacked common-emitter (SCE) and stacked common-base topologies (SCB) for high efficiency and broadband millimeter-Wave (mmWave) power amplifiers (PAs) in 250 nm InP-based heterojunction bipola
Externí odkaz:
https://doaj.org/article/f37db63ae31c439383d802c478c24d08
“Gefangen in Mauthausen” (Imprisoned in Mauthausen) is volume three of a ”major European project on the history of the survivors” (Carlo Moos). It deals with the everyday life of the concentration camp inmates and their attempts to make use o
Externí odkaz:
https://library.oapen.org/handle/20.500.12657/87150
