Zobrazeno 1 - 10
of 13
pro vyhledávání: '"Haziret Durmuş"'
Autor:
Selçuk Demirezen, Murat Ulusoy, Haziret Durmuş, Halit Cavusoglu, Kurtuluş Yılmaz, Şemsettin Altındal
Publikováno v:
ACS Omega, Vol 8, Iss 49, Pp 46499-46512 (2023)
Externí odkaz:
https://doaj.org/article/c5ca0f551b5d43b48ff606526177ca9b
Publikováno v:
Current Applied Physics. 44:85-89
© 2022 Korean Physical SocietySchottky diodes still attract researchers as they are used in various device applications. This study provides I–V characteristics of Ti/n-GaAs (80–300 K). Higher barrier height (ΦB0) values were obtained for highe
WOS: 000497851000007
In this study, Re/n-GaAs with a native oxide layer based on metal-semiconductor (MS) structures were produced and then, the capacitance-voltage-temperature (C-V-T) and the conductance-voltage-temperature (G/-V-T) data of the
In this study, Re/n-GaAs with a native oxide layer based on metal-semiconductor (MS) structures were produced and then, the capacitance-voltage-temperature (C-V-T) and the conductance-voltage-temperature (G/-V-T) data of the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ea3ce794cca16e1714c8d482e9dd7726
https://hdl.handle.net/20.500.12395/38554
https://hdl.handle.net/20.500.12395/38554
Publikováno v:
Silicon. 10:361-369
The current–capacitance-voltage characteristics of Re/n-type Si Schottky contacts have been measured in the temperature range of 60–300 K by steps of 20 K. The ohmic and Schottky contacts are made by the Pulsed Laser Deposition (PLD) technique. T
WOS: 000468050800097
AbstarctThis study presents electrical characteristics of n-GaAs based Schottky barrier diodes (SBDs) with Rhenium (Re) rectifier contacts. The electrical characteristics of the Re/n-GaAs SBDs were investigated utilizing the
AbstarctThis study presents electrical characteristics of n-GaAs based Schottky barrier diodes (SBDs) with Rhenium (Re) rectifier contacts. The electrical characteristics of the Re/n-GaAs SBDs were investigated utilizing the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d50c8e1f733ef9fc7ba814609433c6cd
https://avesis.gazi.edu.tr/publication/details/fcbbf7df-c5e2-453a-a1ba-92c236c2e63f/oai
https://avesis.gazi.edu.tr/publication/details/fcbbf7df-c5e2-453a-a1ba-92c236c2e63f/oai
Autor:
Şükrü Karataş, Haziret Durmuş
WOS: 000457604600002
The main electrical characteristics of current-voltage (I-V) and capacitance-voltage (C-V) measurements at room temperature of the Re/n-type Si Schottky barrier diodes prepared by pulsed laser deposition (PLD) method have be
The main electrical characteristics of current-voltage (I-V) and capacitance-voltage (C-V) measurements at room temperature of the Re/n-type Si Schottky barrier diodes prepared by pulsed laser deposition (PLD) method have be
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::655bbf463408aa2e15458ebe3270501c
https://hdl.handle.net/20.500.12395/38225
https://hdl.handle.net/20.500.12395/38225
Publikováno v:
Journal of Materials Science: Materials in Electronics. 31:714-714
Publikováno v:
Applied Clay Science. :70-79
We determined the activation energy for dipole rotation and electrical conductivity by analyzing the frequency dependent dielectric permittivity measurements of purified Ca-Bentonite. The measurements were performed at four different temperatures bet
Autor:
Mevlut Dogan, Haziret Durmuş, Kenneth W. D. Ledingham, Tuğbahan Yılmaz Alıç, Hamdi Şükür Kiliç
Publikováno v:
Rapid Communications in Mass Spectrometry. 26:893-905
Butane is an important industrial chemical in which photo-processes are very important for the initiation of reactions. Recent advances in nanosecond pulsed laser technology have led to high laser intensities being available to researchers to enable
Publikováno v:
Journal of Applied Polymer Science. 120:1490-1495
Optical absorbance measurements have been performed on the epoxy resin and the composites prepared by its modification with two different oxime derivatives (benzaldoxime and 2-furaldoxime) in the wavelength interval of 190-680 nm by unpolarized light