Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Hazara S. Rathore"'
Autor:
W.-K. Li, Chester T. Dziobkowski, Stephan A. Cohen, Michael Lane, K. Ida, C.-C. Yang, Jeremy L. Martin, S. Vogt, T. Van Kleeck, Jason Gill, David L. Questad, Philip L. Flaitz, William F. Landers, X.-H. Liu, Christopher D. Muzzy, T. Ivers, T. Shaw, Kaushik Chanda, J. Wright, M. Cullinan, Takeshi Nogami, A. Sakamoto, Son Nguyen, Larry Clevenger, W. Cote, M. Yoon, A. Cowley, S. Tempest, Charles R. Davis, Daniel C. Edelstein, David P. Klaus, James J. Demarest, Andrew H. Simon, Swastika N. Das, Anita Madan, C. Parks, Stephen M. Gates, W. Wille, Darryl D. Restaino, John A. Fitzsimmons, S. Molis, Du Binh Nguyen, R. G. Filippi, Birendra N. Agarwala, D. Hawken, S. Arai, M. Ono, N. Klymko, Y.-H. Lin, A. Carbone, Joe Lee, Hazara S. Rathore, Derren N. Dunn, Alfred Grill, Eric G. Liniger, S. Lane, Y. Shimooka, Yanfeng Wang, Sandra G. Malhotra, Timothy J. Dalton, P. Davis, E. Simonyi
Publikováno v:
Proceedings of the IEEE 2004 International Interconnect Technology Conference (IEEE Cat. No.04TH8729).
We report a comprehensive characterization of a 90 nm CMOS technology with Cu/SiCOH low-k interconnect BEOL. Significant material and integration engineering have led to the highest reliability, without degrading the performance expected from low-k.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7517d96a0646167b24ad2d088b95274a
https://doi.org/10.1109/iitc.2004.1345750
https://doi.org/10.1109/iitc.2004.1345750
Autor:
J. Wright, X.-H. Liu, Christopher D. Muzzy, Swastika N. Das, Birendra N. Agarwala, T. Van Kleeck, Jason Gill, M. Ono, W. Wille, Stephen M. Gates, Ann Swift, Jeremy L. Martin, C. Parks, Philip L. Flaitz, Yanfeng Wang, M. Yoon, Kaushik Chanda, S. Vogt, William F. Landers, W.-K. Li, F. Chen, K. Ida, E.G. Liniger, David L. Questad, A. Cowley, T. Ivers, A. Carbone, T. Shaw, D. Klaus, S. Nguyen, Y.-H. Lin, James J. Demarest, Daniel C. Edelstein, John A. Fitzsimmons, Andrew H. Simon, S. Molis, T. Nogami, D. Nguyen, Timothy J. Dalton, P. Davis, S. Arai, E. Simonyi, J. Lee, R. G. Filippi, Darryl D. Restaino, Chester T. Dziobkowski, Stephan A. Cohen, Michael Lane, D. Hawken, Charles R. Davis, W. Cote, A. Sakamoto, Sandra G. Malhotra, Chih-Chao Yang, Derren N. Dunn, N. Klymko, M. Cullinan, Larry Clevenger, S. Lane, Y. Shimooka, A. Madan, Hazara S. Rathore, Alfred Grill
Publikováno v:
2004 IEEE International Reliability Physics Symposium. Proceedings.
Integration and development of Cu Back-End of Line (BEOL) with PECVD low-k organosilicate glass (OSG, also called SiCOH, carbon-doped oxide, CDO, etc.) for 130 nm and 90 nm CMOS technologies has been reported by a number of institutions. Here we repo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::044c9de7d72a4a118b86c5b5bb31a71f
https://doi.org/10.1109/relphy.2004.1315344
https://doi.org/10.1109/relphy.2004.1315344
Publikováno v:
29th Annual Proceedings Reliability Physics 1991.
Various lifetimes and competing failure modes, i.e., extrusion-shorts and void-opens, were found for W via-stud chains with a layered refractory AlCu interconnect. The goal was to specify the reliability scaling trends of multilevel interconnections
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::813eb45c0338f8259751b1b2c4a24d4b
https://doi.org/10.1109/relphy.1991.145987
https://doi.org/10.1109/relphy.1991.145987
Autor:
Hazara S. Rathore
Publikováno v:
20th International Reliability Physics Symposium.
The via hole in non-overlap vias is larger than the width of the underlaying metal stripe. The upper metal thins down along the slope of the via hole. The extent of thinning depends upon the angle of the via. The reliability of the via can be assured
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::47645db722767f007a262380ea07d6f3
https://doi.org/10.1109/irps.1982.363025
https://doi.org/10.1109/irps.1982.363025