Zobrazeno 1 - 10
of 82
pro vyhledávání: '"Haynes–Shockley experiment"'
Publikováno v:
Russian Physics Journal. 60:923-927
Based on the phenomenological consideration of the drift and carrier heating processes in the bulk of the А III B V type semiconductors in strong crossed electric and magnetic fields, a quasi-three-dimensional model describing main kinetic component
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::33aef27b78459e23ef7862f7a3f71d26
https://doi.org/10.1007/s11182-017-1159-7
https://doi.org/10.1007/s11182-017-1159-7
Autor:
V. R. Nikitenko, A. Yu. Kudrov
Publikováno v:
Semiconductors. 51:158-162
A simple analytical model of the field-diffusion coefficient is developed for moderate carrier concentrations. Hopping transport is described by the multiple-trapping model based on the transport-level concept. A continuity equation with a diffusion
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::23c423696ebfd18e1d814fce038ffced
https://doi.org/10.1134/s1063782617020129
https://doi.org/10.1134/s1063782617020129
Autor:
Gregoire Sissoko, Ibrahima Datta, Marcel S. Douf, Mor Ndiaye, Richard Mane, Mamadou Wade, Youssou Traore, Séni Tamba, Ibrahima Ly
Publikováno v:
Energy and Power Engineering. :1-10
This work deals with minority carrier diffusion coefficient study in silicon solar cell, under both temperature and applied magnetic field. New expressions of diffusion coefficient are pointed out, which gives attention to thermal behavior of minorit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::84d2b45e0e703d19a67b4c476c5f7f5d
https://doi.org/10.4236/epe.2017.91001
https://doi.org/10.4236/epe.2017.91001
Autor:
Michael Seibt, Andreas Kelling, Birte Kressdorf, Patrick Peretzki, Christian Jooss, Benedikt Ifland, P. Saring
Publikováno v:
Beilstein Journal of Nanotechnology, Vol 6, Iss 1, Pp 1467-1484 (2015)
Beilstein Journal of Nanotechnology
Beilstein Journal of Nanotechnology
After a general introduction into the Shockley theory of current voltage (J–V) characteristics of inorganic and organic semiconductor junctions of different bandwidth, we apply the Shockley theory-based, one diode model to a new type of perovskite
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7f6e1b483e7a98851854bbdab175de26
https://doaj.org/article/50fa09e76f3d42f7a771a224a766bad5
https://doaj.org/article/50fa09e76f3d42f7a771a224a766bad5
Autor:
Jang Jyegal
Publikováno v:
Applied Sciences, Vol 7, Iss 8, p 773 (2017)
Applied Sciences; Volume 7; Issue 8; Pages: 773
Applied Sciences; Volume 7; Issue 8; Pages: 773
The currently used generalized Einstein relation for degenerate semiconductors with isotropic nonparabolic energy bands produces physically improper results, as well as losing numerical accuracy for large values of nonparabolicity parameters at room
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::19e4ee89abc9c824d7198898fea22d59
https://www.mdpi.com/2076-3417/7/8/773
https://www.mdpi.com/2076-3417/7/8/773
Publikováno v:
World Journal of Condensed Matter Physics. :84-92
In this paper, a theory on the determination of the diffusion coefficient of excess minority carriers in the base of a silicon solar cell is presented. The diffusion coefficient expression has been established and is related to both frequency modulat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b74e46159923c045371864035cdcd550
https://doi.org/10.4236/wjcmp.2014.42013
https://doi.org/10.4236/wjcmp.2014.42013
Publikováno v:
Second Order Non-linear Optics of Silicon and Silicon Nanostructures
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::862740fb81940e4b5e36edc9ba823a19
https://doi.org/10.1201/b19922-23
https://doi.org/10.1201/b19922-23
Publikováno v:
Solid-State Electronics. 56:60-67
Criteria for occurrence of the quasineutral diffusion mode have been investigated in terms of a generalized approach that takes into account the dependences of the electron and hole velocities on the electric field. These criteria should be used to d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::af8386eba38ff30698aab6490a4deffb
https://doi.org/10.1016/j.sse.2010.11.001
https://doi.org/10.1016/j.sse.2010.11.001
Autor:
Ian Appelbaum
Publikováno v:
Solid-State Electronics. 53:1242-1245
Haynes and Shockley’s seminal measurements of minority-carrier transport in semiconductors 60 years ago ushered in a new age of solid-state electronics. However, device scaling issues now compel us to look toward alternative state variables other t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e0f6b950e4833361c8ae6bcb1a68768a
https://doi.org/10.1016/j.sse.2009.09.012
https://doi.org/10.1016/j.sse.2009.09.012
Autor:
Evgeny L. Pankratov
Publikováno v:
Journal of Molecular Liquids. 114:179-185
The integral relaxation time of dopant diffusion in a semiconductor has been analytically derived for the case of weakly space and time varying diffusion coefficient. It has been shown that the well-known integral criterion for the relaxation time is
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c563a5336a0ba921a0384f2f8cf025f5
https://doi.org/10.1016/j.molliq.2004.02.017
https://doi.org/10.1016/j.molliq.2004.02.017