Zobrazeno 1 - 3
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pro vyhledávání: '"Haydn Zhou"'
Autor:
Ningqi Zhu, Jason Pei, Erik Xiao, Haydn Zhou, Miao Bing, Seddy Chu, Xin Li, Jin Zhu, Bob Dong, Leeming Tu, Cynthia Li, Kevin Huang
Publikováno v:
Metrology, Inspection, and Process Control for Semiconductor Manufacturing XXXV.
In recent years, the pursuit of high storage capacity in 3D-NAND flash devices has driven the addition of more layers to increase the stack height. Challenges arise when etching high aspect ratio memory holes. Due to the existence of a thick and opaq
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::26b673bf0080e36de54257726bcf605c
https://doi.org/10.1117/12.2583760
https://doi.org/10.1117/12.2583760
Publikováno v:
2020 31st Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC).
Metrology measurements of the top copper contact in the main chip area is critical to predict the subsequent electrical performance in advanced 3D NAND technology nodes. Conventional CDSEM is used in the determination of top copper CD while the accur
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0271da3dddbceec2eace0c9901606aea
https://doi.org/10.1109/asmc49169.2020.9185390
https://doi.org/10.1109/asmc49169.2020.9185390
Publikováno v:
Metrology, Inspection, and Process Control for Microlithography XXXIV.
Tilted channel holes affect final yield significantly in High Aspect Ratio (HAR) 3D NAND memory wafer processing. An in-line measurement method is developed to use machine learning that utilizes the spectra from optical metrology to map Tilt-X and Ti
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8d7859dd83ec8941dfe0c03152d52360
https://doi.org/10.1117/12.2551622
https://doi.org/10.1117/12.2551622