Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Haydn Wadsworth"'
Autor:
Haydn Wadsworth, S.J.N. Mitchell, Sam Strahan, Teng Hwang Tan, Ivan Andrew David Bailie, David McNeill
Publikováno v:
Tan, T H, Mitchell, S J N, McNeill, D W, Wadsworth, H, Strahan, S & Bailie, I 2017, Medium Doped Non-Suspended Silicon Nanowire Piezoresistor using SIMOX substrate . in International Conference on Advances in Electrical, Electronic and Systems Engineering (ICAEES): Proceedings . Institute of Electrical and Electronics Engineers Inc., pp. 189-193, International Conference on Advances in Electrical, Electronic and Systems Engineering ICAEESE, Putrajaya, Malaysia, 14/11/2016 . https://doi.org/10.1109/ICAEES.2016.7888036
This paper reports on the enhanced piezoresistive effect in p-type silicon nanowires, fabricated using a top down approach. The silicon nanowire width is varied from 100 to 500nm with thickness of 200 nm and length of 9µm. It is found that the piezo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7f6f986df99499e34a0cdadb1e2a5082
https://pure.qub.ac.uk/en/publications/6f97950d-6242-41b8-99dc-6cb5a890645a
https://pure.qub.ac.uk/en/publications/6f97950d-6242-41b8-99dc-6cb5a890645a
Publikováno v:
Vacuum. 83:S29-S32
Applications involving transfer of germanium layers to silicon-based substrates often require a process involving a restricted thermal budget. The use of relatively low temperatures has a major advantage in reducing stresses when thermal splitting of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::37a11cf62ef3e7bbd16eeacdcd2cf285
https://doi.org/10.1016/j.vacuum.2009.01.016
https://doi.org/10.1016/j.vacuum.2009.01.016
Autor:
B.M. Armstrong, S.J.N. Mitchell, Haydn Wadsworth, Harold Gamble, Paul Rainey, Y.H. Low, David McNeill, F.H. Ruddell, Paul Baine
Publikováno v:
International Journal of High Speed Electronics and Systems. 18:805-814
This paper explores the potential of germanium on sapphire (GeOS) wafers as a universal substrate for System on a Chip (SOC), mm wave integrated circuits (MMICs) and optical imagers. Ge has a lattice constant close to that of GaAs enabling epitaxial
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4811a14bd099ce0882ae0bba2cf77f07
https://doi.org/10.1142/s0129156408005783
https://doi.org/10.1142/s0129156408005783
Autor:
B.M. Armstrong, S. Bhattacharya, F.H. Ruddell, Neil Mitchell, Haydn Wadsworth, David McNeill, Harold Gamble, Donal Denvir
Publikováno v:
ECS Transactions. 3:531-537
Germanium MOS capacitors have been fabricated with a high-κ HfO2 dielectric using ALD. An in-situ low temperature (250ºC) nitrogen plasma treatment on the germanium surface prior to the deposition of HfO2 was found to be beneficial to the electrica
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e3c20aec7312d287e017f9cf0966aa60
https://doi.org/10.1149/1.2355850
https://doi.org/10.1149/1.2355850
Autor:
B.M. Armstrong, S. Bhattacharya, Haydn Wadsworth, David McNeill, D. Denvir, F.H. Ruddell, Harold Gamble
Publikováno v:
Materials Science in Semiconductor Processing. 9:685-689
Germanium (Ge) does not grow a suitable oxide for MOS devices. The Ge/dielectric interface is of prime importance to the operation of photo-detectors and scaled MOSTs. Therefore there is a requirement for deposited or bonded dielectric materials. MOS
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6a80cea522cefaffbda2d20ae4a126b2
https://doi.org/10.1016/j.mssp.2006.08.052
https://doi.org/10.1016/j.mssp.2006.08.052
Autor:
Betts, Haydn Wadsworth
This thesis is directed to preparing for and managing floods that overwhelm floodplain management measures already in place in South East Queensland’s extensively developed residential floodplains. Such floods would generally have a magnitude great
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6bc90da1044fc6a7c257da63a48cb52a