Zobrazeno 1 - 10
of 158
pro vyhledávání: '"Haydl, W.H."'
A 0.15 mu m high gain, passivated, double-side-doped InAlAs/ InGaAs HEMT with high uniformity over 2in InP substrates has been developed. A measured gain of 12.5dB at 94GHz was achieved at a drain bias of 2V, giving an f(max) exceeding 400GHz. This h
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od_______610::126c1e586d5d232bbb4029a80252b55e
https://publica.fraunhofer.de/handle/publica/193103
https://publica.fraunhofer.de/handle/publica/193103
Publikováno v:
Sporkmann, T. ; Naghed, M. ; Verweyen, L. ; Haydl, W.H. ; Schlechtweg, M. (1998) Coplanar MMICs-The future for mass production! In: Gallium Arsenide Applications Symposium. GAAS 1998, 5-6 October 1998, Amsterdam, The Netherlands.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f83b6400342fd9ce85afeab7aac26e46
Compact high-gain W-band multistage amplifier MMIC's have been developed in coplanar technology using 0.15- mu m AlGaAs/InGaAs/GaAs PM-HEMT's. The conventional dual-gate HEMT has been modified to include an additional interstage network between the c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od_______610::3e8c082928b3697cccc21c2639740569
https://publica.fraunhofer.de/handle/publica/192634
https://publica.fraunhofer.de/handle/publica/192634
Autor:
Schlechtweg, M., Haydl, W.H., Bangert, A., Braunstein, J., Tasker, P.J., Verweyen, L., Massler, H., Bronner, W., Hülsmann, A., Köhler, K.
A small signal S-parameter and noise model for the cascode MODFET has been validated up to 120 GHz, allowing predictable monolithic microwave integrated circuit (MMIC) design up to W-band. The potential of coplanar waveguide technology to build compa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od_______610::80dddcd530abd64b129bf5352f528496
https://publica.fraunhofer.de/handle/publica/188052
https://publica.fraunhofer.de/handle/publica/188052
Autor:
Haydl, W.H.
Experimental results agree with the assumption that the current density along the gate decreases linearly, which is valid for the low gate metalization sheet resistances commonly used. The d.c. potential distributions along gates of different length,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od_______610::a4b221041be2970afb56584adbfc3618
https://publica.fraunhofer.de/handle/publica/181447
https://publica.fraunhofer.de/handle/publica/181447
Publikováno v:
2002 IEEE MTT-S International Microwave Symposium Digest (Cat. No.02CH37278); 2002, p1851-1854, 4p
Autor:
Bessemoulin, A., Sedler, M., Massler, H., Haydl, W.H., Geiger, D., Brugger, H., Quentin, P., Schlechtweg, M.
Publikováno v:
30th European Microwave Conference, 2000; 2000, p1-4, 4p
Publikováno v:
GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium 21st Annual Technical Digest 1999 (Cat No99CH36369); 1999, p233-236, 4p
Autor:
Tessmann, A., Verweyen, L., Neumann, N., Massler, H., Haydl, W.H., Hulsmann, A., Schlechtweg, M.
Publikováno v:
GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium 21st Annual Technical Digest 1999 (Cat No99CH36369); 1999, p207-210, 4p