Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Hayden R. Alty"'
Autor:
Scott M. Lewis, Hayden R. Alty, Michaela Vockenhuber, Guy A. Derose, Dimitrios Kazazis, Grigore A. Timco, James A. Mann, Paul Winpenny, Axel Scherer, Yasin Ekinci, Richard E. Winpenny
Publikováno v:
Advances in Patterning Materials and Processes XL.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b5d039c471bae3147b4d1180d6b55d04
https://doi.org/10.1117/12.2658324
https://doi.org/10.1117/12.2658324
Autor:
Scott M. Lewis, Guy A. DeRose, Hayden R. Alty, Matthew S. Hunt, Nathan Lee, James A. Mann, Richard Grindell, Alex Wertheim, Lucia De Rose, Antonio Fernandez, Christopher A. Muryn, George F. S. Whitehead, Grigore A. Timco, Axel Scherer, Richard E. P. Winpenny
Publikováno v:
Antonio Fernandez Mato
Lewis, S M, DeRose, G A, Alty, H R, Hunt, M S, Lee, N, Mann, J A, Grindell, R, Wertheim, A, De Rose, L, Fernandez, A, Muryn, C A, Whitehead, G F S, Timco, G A, Scherer, A & Winpenny, R E P 2022, ' Tuning the Performance of Negative Tone Electron Beam Resists for the Next Generation Lithography ', Advanced Functional Materials, vol. 32, no. 32, 2202710 . https://doi.org/10.1002/adfm.202202710
Lewis, S M, DeRose, G A, Alty, H R, Hunt, M S, Lee, N, Mann, J A, Grindell, R, Wertheim, A, De Rose, L, Fernandez, A, Muryn, C A, Whitehead, G F S, Timco, G A, Scherer, A & Winpenny, R E P 2022, ' Tuning the Performance of Negative Tone Electron Beam Resists for the Next Generation Lithography ', Advanced Functional Materials, vol. 32, no. 32, 2202710 . https://doi.org/10.1002/adfm.202202710
A new class of electron bean negative tone resist materials has been developed based on heterometallic rings. The initial resist performance demonstrates a resolution of 15 nm half-pitch but at the expense of a low sensitivity. To improve sensitivity
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::44d4c67f71d03b797d4b219a30c11339
https://resolver.caltech.edu/CaltechAUTHORS:20220718-951245300
https://resolver.caltech.edu/CaltechAUTHORS:20220718-951245300
Autor:
Christopher A. Muryn, Peng Tian, Grigore A. Timco, Scott M. Lewis, Richard E. P. Winpenny, Anastasios Kotsovinos, Hayden R. Alty, Ahmad Chaker
Publikováno v:
ACS Applied Nano Materials
An approach is presented for nanoscale patterning of zinc oxide (ZnO) using electron beam (e-beam) lithography for future nanoelectronic devices and for hard lithographic masks. Zinc acetate (Zn4O(...
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1ded4fbc6582a6b018f5c7084a385005
Autor:
Scott M. Lewis, George F. S. Whitehead, Fredrik Schedin, Guy A. DeRose, Stephen G. Yeates, Jesús Ferrando-Soria, Axel Scherer, Grigore A. Timco, Richard E. P. Winpenny, Hayden R. Alty, Sarah Varey, Matthew S. Hunt, Andreas K. Kostopoulos, Agnese Lagzda, Antonio Fernandez, Christopher A. Muryn
Publikováno v:
Lewis, S, Fernandez Mato, A, DeRose, G A, Hunt, M, Whitehead, G, Lagzda, A, Alty, H, Ferrando Soria, J, Varey, S, Kostopoulos, A, Schedin, B, Muryn, C, Timco, G, Scherer, A, Yeates, S & Winpenny, R 2017, ' Use of Supramolecular Assemblies as Lithographic Resists ', Angewandte Chemie-International Edition, vol. 56, no. 24 . https://doi.org/10.1002/anie.201700224
We show that by design we can create a new resist materials for electron beam lithography, based on a supramolecular assembly. The initial studies show that via this supramolecular approach high resolution structures can be written which showunpreced
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::749a433e80f61731a85cc21bc8d1d750
https://doi.org/10.1002/ange.201700224
https://doi.org/10.1002/ange.201700224
Autor:
Grigore A. Timco, Richard E. P. Winpenny, Jarvis Li, Axel Scherer, Matthew S. Hunt, Hayden R. Alty, Stephen G. Yeates, Alex Wertheim, Scott M. Lewis, Lucia B. De Rose, Guy A. DeRose
Publikováno v:
Lewis, S M, Hunt, M, Derose, G, Alty, H, Li, J, Wertheim, A, Derose, L, Timco, G A, Scherer, A, Yeates, S G & Winpenny, R E P 2019, ' Plasma-etched pattern transfer of sub-10 nm structures using a metal–organic resist and helium ion beam lithography ', Nano Letters . https://doi.org/10.1021/acs.nanolett.9b01911
Field-emission devices are promising candidates to replace silicon fin field-effect transistors as next-generation nanoelectronic components. For these devices to be adopted, nanoscale field emitters with nanoscale gaps between them need to be fabric
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::50f008c97f1d4ff941dee0b4218d4f12
https://doi.org/10.1021/acs.nanolett.9b01911
https://doi.org/10.1021/acs.nanolett.9b01911
Autor:
Trevor M. Fowler, Alex Werthiem, Christopher A. Muryn, Axel Scherer, Jarvis Li, Guy A. DeRose, Grigore A. Timco, Stephen G. Yeates, Hayden R. Alty, Matthew S. Hunt, Sang Kook Lee, Scott M. Lewis, Richard E. P. Winpenny
Publikováno v:
Photomask Technology 2018.
A new class of resist materials has been developed that is based on a family of heterometallic rings. The work is founded on a Monte Carlo simulation that utilizes a secondary and Auger electron generation model to design resist materials for high re
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7c18f0aacd6f47929b9a97f26d7f22fd
https://doi.org/10.1117/12.2501808
https://doi.org/10.1117/12.2501808