Zobrazeno 1 - 10
of 69
pro vyhledávání: '"Hayato Sone"'
Publikováno v:
European Journal of Applied Physics. 3:84-90
We have formed nanometer-wide lines & spaces by graphoepitaxy of sphere type polystyrene-poly dimethyl siloxane (PS-PDMS), with a molecular weight (MW) of 14.6 kg/mol., along electron-beam (EB)-drawn resist guide lines. We have 3-dimensionally ordere
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4901e3df213f65073f95be36655e43e3
https://doi.org/10.24018/ejphysics.2021.3.6.141
https://doi.org/10.24018/ejphysics.2021.3.6.141
Autor:
Naoki Kikuchi, Hayato Sone, Noriyasu Ohshima, Toshiya Sakata, Hui Zhang, Takashi Izumi, Taira Kajisa
Publikováno v:
ACS Applied Materials & Interfaces. 12:51808-51819
As critical factors affecting the sensing performance of silicon nanowire (SiNW) biosensors, the structure, functional interface, and detection target were analyzed and designed to improve sensing performance. For an improved understanding of the dep
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e6baa1524fe774ee14721a3d5d59030d
https://doi.org/10.1021/acsami.0c13984
https://doi.org/10.1021/acsami.0c13984
Autor:
Hui Zhang, Kakeru Oshima, Takashi Izumi, Yuya Sakurai, Takaaki Suzuki, Hayato Sone, Tashiro Tomoya, Noriyasu Ohshima
Publikováno v:
Key Engineering Materials. 790:28-33
A simple fabrication process of an n-type silicon nanowire (SiNW) biosensor for sub-10 femtomolar (fM) concentration immunoglobulin detection was presented in this work. The SiNWs with different widths of 80-190 nm were fabricated using electron beam
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fff3392482277a20f90068111318e865
https://doi.org/10.4028/www.scientific.net/kem.790.28
https://doi.org/10.4028/www.scientific.net/kem.790.28
Publikováno v:
Journal of Luminescence. 197:242-247
Eu3+-activated Tb3Al5O12 (TAG:Eu3+) reddish orange-light emitting garnet phosphor was synthesized by the metal-organic decomposition method and subsequent calcination at Tc = 1200 °C in air. The luminescence properties of the TAG:Eu3+ phosphor were
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fce93c079c091789b67169554c33bf8d
https://doi.org/10.1016/j.jlumin.2018.01.043
https://doi.org/10.1016/j.jlumin.2018.01.043
Autor:
Masashi Kuwahara, Maho Abe, Sumio Hosaka, Hideaki Uratsuji, Joe Sakai, Tohru Tsuruoka, Rie Endo, Hayato Sone, Yoichi Uehara
Publikováno v:
Applied Surface Science
Applied Surface Science, Elsevier, 2015, 346, pp.366--371. ⟨10.1016/j.apsusc.2015.03.199⟩
Applied Surface Science, Elsevier, 2015, 346, pp.366--371. ⟨10.1016/j.apsusc.2015.03.199⟩
International audience; We have produced Sb\textendashTe alloy nanostructures from a thin Sb2Te3 layer deposited on a highly oriented pyrolytic graphite substrate using a simple rf-magnetron sputtering and annealing technique. The size, shape, and ch
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d084cd54a2108e62c1f57cf5fb814d1c
https://doi.org/10.1016/j.apsusc.2015.03.199
https://doi.org/10.1016/j.apsusc.2015.03.199
Autor:
Maisarah B. A. Razak, Jun Yoshinobu, Sumio Hosaka, Kozo Mukai, Hayato Sone, Mark C. Hersam, Takanori Koitaya, Zakir Hossain, Shinya Yoshimoto
Publikováno v:
The Journal of Physical Chemistry C. 118:1014-1020
To explore the chemical and electronic states of oxidized epitaxial graphene (EG) grown on the Si face of SiC(0001), we employ the Hummers oxidizing agents (H2SO4 + NaNO3 + KMnO4) under different reaction conditions that oxidize the graphene layer. T
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ce28b39a3b915964a4a0e89e2d7f81a8
https://doi.org/10.1021/jp4092738
https://doi.org/10.1021/jp4092738
Publikováno v:
Key Engineering Materials. 596:147-151
Atomic force microscopy (AFM) is the useful tool for measuring the micro fabricated devices. Measuring sample surface with AFM, tip-induced distortions are serious problem for accurate measurement. In order to overcome this problem, many studies are
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::57719c4385faf7d0267382f95aee42c0
https://doi.org/10.4028/www.scientific.net/kem.596.147
https://doi.org/10.4028/www.scientific.net/kem.596.147
Publikováno v:
Key Engineering Materials. 596:224-228
We demonstrated the fabrication of silicon nanowire (SiNW) sensors by focused ion beam (FIB) method and determined the effects of changes of nanowire parameters of width and wire-number on the SiNW electrical property. SiNW sensors were fabricated on
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b871ab09365fcf2227cdacf4bf64289d
https://doi.org/10.4028/www.scientific.net/kem.596.224
https://doi.org/10.4028/www.scientific.net/kem.596.224
Publikováno v:
Applied Mechanics and Materials. :125-129
Undoped and B-doped silicon-based nanowires (SiNWs) were synthesized by vapor-liquid-solid growth, and SiNW devices using Au electrodes were prototyped using focused ion beam (FIB) processing. Needle-shaped thin SiNWs were formed at a substrate tempe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::11e9d4887aabf2ab03acfe5a758a0c35
https://doi.org/10.4028/www.scientific.net/amm.423-426.125
https://doi.org/10.4028/www.scientific.net/amm.423-426.125
Publikováno v:
Key Engineering Materials. 534:257-261
Silicon-based nanowires (Si-NWs) were fabricated by vapor liquid solid (VLS) growth, and Si-NW device was prototyped using focused ion beam (FIB) processing. The needle shaped thin Si-NWs were formed at a substrate temperature between 1120 and 1313°
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f609f9ed306a959a4363349d68ed9f21
https://doi.org/10.4028/www.scientific.net/kem.534.257
https://doi.org/10.4028/www.scientific.net/kem.534.257