Zobrazeno 1 - 9
of 9
pro vyhledávání: '"Hayato Hasebe"'
Publikováno v:
AIP Advances, Vol 12, Iss 4, Pp 045120-045120-5 (2022)
Semiconducting barium disilicide (BaSi2) is a promising material for solar cell and thermoelectric applications; hence, high-mobility films are of great importance. In this study, we achieved substantially high electron mobilities exceeding 103 cm2 V
Externí odkaz:
https://doaj.org/article/ff9dfb5ac2a74a78a2f42de0ce1317c0
Autor:
Rui Du, Sho Aonuki, Hayato Hasebe, Kazuki Kido, Haruki Takenaka, Kaoru Toko, Masami Mesuda, Takashi Suemasu
Publikováno v:
Japanese Journal of Applied Physics. 62:SD1015
Sputter-deposited polycrystalline BaSi2 films capped with a 5 nm thick a-SiC layer showed high photoresponsivity. This means that the a-SiC layer functions as a capping layer to prevent surface oxidation of BaSi2. Based on the measured absorption edg
Autor:
Haruki Takenaka, Hayato Hasebe, Kazuki Kido, Ryota Koitabashi, Masami Mesuda, Kaoru Toko, Takashi Suemasu
Publikováno v:
Japanese Journal of Applied Physics. 62:SD1011
Semiconducting BaSi2 has attractive features for thin-film solar cell applications. In this study, we investigated the potential of NiO as a hole transport layer in NiO/BaSi2 heterojunction solar cells both by simulation and by experiment. To find de
Towards B-doped p-BaSi2 films on Si substrates by co-sputtering of BaSi2, Ba, and B-doped Si targets
Autor:
Hayato Hasebe, Kazuki Kido, Haruki Takenaka, Masami Mesuda, Kaoru Toko, Dmitri B. Migas, Takashi Suemasu
Publikováno v:
Japanese Journal of Applied Physics. 62:SD1010
BaSi2 is one of the emerging materials for thin-film solar cell applications; hence the conductivity control by impurity doping is of great importance. The formation of B-doped p-BaSi2 films has been achieved by molecular beam epitaxy and vacuum evap
Autor:
Kazuki Kido, Ryuichi Yoshida, Ryota Koitabashi, Hayato Hasebe, Yudai Yamashita, Tomoki Ozawa, Masami Mesuda, Kaoru Toko, Takashi Suemasu
Publikováno v:
Japanese Journal of Applied Physics. 62:SD1008
We formed n-type polycrystalline semiconducting BaSi2 films on insulating silicon nitride films by sputtering and investigated their electrical and thermoelectric properties. The electron concentration of the grown films was approximately 1015–1016
Autor:
Kazuki Kido, Ryota Koitabashi, Takamistu Ishiyama, Hayato Hasebe, Masami Mesuda, Kaoru Toko, Takashi Suemasu
Publikováno v:
Thin Solid Films. 758:139426
Autor:
Ryota Koitabashi, Kazuki Kido, Hayato Hasebe, Yudai Yamashita, Kaoru Toko, Masami Mesuda, Takashi Suemasu
Publikováno v:
Applied Physics Express. 15:025502
We formed randomly oriented polycrystalline BaSi2 films on TiN(metal)/SiO2 substrates at 600 °C by co-sputtering BaSi2 and Ba targets. Ba-to-Si atomic ratios reaching the substrate (N Ba/N Si = 0.28–0.76) was controlled by a radio-frequency power
Autor:
Hayato Hasebe, Yoko Akasaka, Hidemasa Suzuki, Hiroto Itoh, Tadahide Noguchi, Kazurou Yamaguchi, Yoshinori Jinbu
Publikováno v:
Journal of Japanese Society for Oral Mucous Membrane. 7:20-25
Publikováno v:
Journal of chromatographic science. 41(6)
Single puffs of cigarette smoke with a wide continuous range of volatility are directly analyzed using a new system. The system consists of a smoking machine, an online thermal desorption system (TDS), and a multidimensional gas chromatograph-mass sp