Zobrazeno 1 - 6 of 6 pro vyhledávání: '"Hayata Fukushima"'
2
Correlation between nanopipes formed from screw dislocations during homoepitaxial growth by metal-organic vapor-phase epitaxy and reverse leakage current in vertical p–n diodes on a free-standing GaN substrates
Autor: Hiroshi Amano, Shigeyoshi Usami, Yoshio Honda, Shugo Nitta, Yuto Ando, Atsushi Tanaka, Manato Deki, Hayata Fukushima
Publikováno v: Japanese Journal of Applied Physics. 58:SCCB24
We fabricated p−n diodes under different growth pressures on free-standing GaN substrates of the same quality and observed a noteworthy difference in the reverse leakage current. A large reverse leakage current was generated by nanopipes, which wer
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::171092be01e82f53d9ddd527244697a7
https://doi.org/10.7567/1347-4065/ab1250
Zobrazit plný text záznamu
3
Vertical GaN p–n diode with deeply etched mesa and the capability of avalanche breakdown
Autor: Shigeyoshi Usami, Masaya Ogura, Maki Kushimoto, Hiroshi Amano, Yoshio Honda, Atsushi Tanaka, Shugo Nitta, Yuto Ando, Hayata Fukushima, Manato Deki
Publikováno v: Applied Physics Express. 12:026502
A simple structure with high breakdown voltage and a low leakage current of a vertical GaN p–n diode on a GaN free-standing substrate is demonstrated. We describe a vertical p–n diode with a simple edge termination that has a drift layer etched d
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::9bb6f8334524102199097bac478e30b5
https://doi.org/10.7567/1882-0786/aafdb9
Zobrazit plný text záznamu

Vyhledávací nástroje:

Upřesnit hledání

Omezení vyhledávání
Plný text Recenzováno Digitální knihovna AV ČR
Zdroje