Zobrazeno 1 - 10
of 12
pro vyhledávání: '"Havva Elif Lapa"'
Autor:
Havva Elif Lapa
Publikováno v:
Süleyman Demirel Üniversitesi Fen-Edebiyat Fakültesi Fen Dergisi, Vol 17, Iss 1, Pp 195-208 (2022)
Bu çalışmada, CuO ince filmler, ultrasonik sprey piroliz (USP) yöntemi ile farklı alttaş sıcaklıklarında (350, 400, 450 ve 500 ºC) cam altlıklar üzerine biriktirilmiştir ve ardından 525 ºC’de tavlanmıştır. X-ışını kırınımı
Externí odkaz:
https://doaj.org/article/dcf1e24e1dc848728f0fa822d068de4b
Autor:
Havva Elif Lapa
Publikováno v:
Journal of Materials Science: Materials in Electronics. 34
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ea851fe6b48101178ec8d01c7929332c
https://doi.org/10.1007/s10854-023-09866-x
https://doi.org/10.1007/s10854-023-09866-x
Lead-free FTO/TiO2/MASnBr(3)/P3HT/Ag perovskite solar cells (PSCs) were fabricated by a fully ultrasonic spray pyrolysis (USP) method. The MASnBr(3) thin films had very large grains (clusters) up to 15 mu m. The crystal/ crystallite size of the films
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d81925e241ab94394e530dc9c31ae8b4
http://acikerisim.sdu.edu.tr/xmlui/handle/123456789/98196
http://acikerisim.sdu.edu.tr/xmlui/handle/123456789/98196
Publikováno v:
Physica Scripta. 98:065805
Lead-free all-inorganic Cs2TiBr6 perovskite solar cells have attracted attention with their 3.3% efficiency and stability. However, instability in air ambiance has been reported for Cs2TiBr6 synthesized in powder form. In this work, Cs2TiBr6 perovski
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8beddf6fde8882cc6c62444e11e8e32b
https://doi.org/10.1088/1402-4896/acd3ba
https://doi.org/10.1088/1402-4896/acd3ba
Publikováno v:
Journal of Materials Science: Materials in Electronics. 32:4448-4456
We have investigated the illumination effect on electrical characteristics of nearly ideal Yb/p-Si Schottky diodes with a high zero-bias barrier height (phi(bo)). The value of reverse bias current increased as the illumination level increased for the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1764b31c3d37a35d091cc7d1dba4e248
https://doi.org/10.1007/s10854-020-05186-6
https://doi.org/10.1007/s10854-020-05186-6
Publikováno v:
Volume: 9, Issue: 3 1385-1394
Journal of the Institute of Science and Technology
Journal of the Institute of Science and Technology
Yb/p-Si Schottky diodes were fabricated by thermal evaporation method. The measurements of current-voltage (I-V) and capacitance-voltage (C-V) of these diodes were carried out at room temperature and dark. The parameters such as ideality factor (n),
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8593760a43fc1e4a728c7984cd13d2b9
https://doi.org/10.21597/jist.537844
https://doi.org/10.21597/jist.537844
Reverse- and forward-bias current-voltage (I-V) data of the Au/(P3DMTFT)/n-GaAs Schottky barrier diodes (SBDs) were measured in dark and at under various illumination levels (from 50 to 200 W with steps of 25 W) for the purpose of examining the chang
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::afce9621f3cdc12bbcf9c21166e42eec
https://avesis.gazi.edu.tr/publication/details/24ef2901-679d-4954-b47d-70400620549e/oai
https://avesis.gazi.edu.tr/publication/details/24ef2901-679d-4954-b47d-70400620549e/oai
Publikováno v:
Volume: 9, Issue: 3 1024-1030
Bitlis Eren Üniversitesi Fen Bilimleri Dergisi
Bitlis Eren Üniversitesi Fen Bilimleri Dergisi
Termal buharlaştırma yöntemiyle imal edilen Zr/SiO2/p-Si Schottky diyotların kapasite-gerilim-frekans (C-V-f) ve iletkenlik-gerilim-frekans (G-V-f) ölçümleri 500 kHz - 3 MHz aralığında 5 farklı frekansta ve oda sıcaklığında alınmışt
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a970613f611d0b55d381b9bdd42083ea
http://acikerisim.sdu.edu.tr/xmlui/handle/123456789/81966
http://acikerisim.sdu.edu.tr/xmlui/handle/123456789/81966
The 50 nm thickness Zn-doped polyvinyl alcohol (PVA) was deposited on n-4H-SiC semiconductor as interlayer by electro-spinning method and so Au/Zn-doped PVA/n-4H-SiC metal-polymer-semiconductor (MPS) structure were fabricated. The real and imaginary
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7ad25aa9d5da57e5e753e4c8c153621a
https://avesis.gazi.edu.tr/publication/details/822c8042-7dce-40bb-95c4-69124e52e8c1/oai
https://avesis.gazi.edu.tr/publication/details/822c8042-7dce-40bb-95c4-69124e52e8c1/oai
Three different thicknesses (50, 150 and 500 nm) Zn-doped polyvinyl alcohol (PVA) was deposited on n-4H-SiC wafer as interlayer by electrospinning method and so, Au/(Zn-doped PVA)/n-4H-SiC metal–polymer–semiconductor structures were fabricated. T
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::601557bdcfc196f8ec2f80927d0a3057
https://avesis.gazi.edu.tr/publication/details/5e18934c-8e4f-4496-aad2-d7a66089cdf9/oai
https://avesis.gazi.edu.tr/publication/details/5e18934c-8e4f-4496-aad2-d7a66089cdf9/oai