Zobrazeno 1 - 10
of 267
pro vyhledávání: '"Haverkort, J.E.M."'
Publikováno v:
In Materials Today: Proceedings 2023 80 Part 3:2602-2609
Akademický článek
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Akademický článek
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Autor:
Korzun, K., Koolen, P.A.L.M., Kolpakov, I., Bochicchio, E.A., Gómez Rivas, J., Haverkort, J.E.M., Freundlich, Alexandre, Collin, Stephane, Hinzer, Karin
Publikováno v:
Physics, Simulation, and Photonic Engineering of Photovoltaic Devices XI
A lossless solar cell operating at the Shockley-Queisser (S-Q) limit generates an open-circuit voltage (VOC) equal to the radiative limit. At VOC, the highly directional beam of photons from the sun is absorbed and subsequently externally reemitted i
Autor:
Korzun, K., Koolen, P.A.L.M., Kolpakov, I., Bochicchio, E.A., Gómez Rivas, J., Haverkort, J.E.M., Sprafke, Alexander N., Goldschmidt, Jan Christoph, Mazzarella, Luana
Publikováno v:
Photonics for Solar Energy Systems IX
A lossless solar cell operating at the Shockley-Queisser (S-Q) limit generates an open-circuit voltage (VOC) equal to the radiative limit. At VOC, the highly directional beam of photons from the sun is absorbed and subsequently externally re-emitted
Autor:
Bochicchio, E.A., Kolpakov, I., Korzun, K., Koolen, P.A.L.M., van Gorkom, B., Berghuis, W.J.H., Veldhoven, R., Haverkort, J.E.M., Freundlich, Alexandre, Collin, Stephane, Hinzer, Karin
Publikováno v:
Physics, Simulation, and Photonic Engineering of Photovoltaic Devices XI
Our previously reported 17.8 % efficiency InP nanowire solar cell1 showed a short-circuit current Isc of 29.3 mA/cm2, which is not far from the theoretical maximum Isc = 34.6 mA/cm2, but the loss in the open circuit voltage with respect to the radiat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7053b3a051a96f7499f8c41a79d80551
https://research.tue.nl/nl/publications/a28bc6e7-f876-435e-8033-968cfb5fc372
https://research.tue.nl/nl/publications/a28bc6e7-f876-435e-8033-968cfb5fc372
Autor:
Kolpakov, I., Bochicchio, E.A., Korzun, K., Koolen, P.A.L.M., van Gorkom, B., Berghuis, W.J.H., Veldhoven, R., Haverkort, J.E.M., Freundlich, Alexandre, Collin, Stephane, Hinzer, Karin
Publikováno v:
Physics, Simulation, and Photonic Engineering of Photovoltaic Devices XI
III/V semiconductor solar cells feature the highest photon conversion efficiencies (PCE), but they are still too expensive for terrestrial application. Conventional nanowire (NW) solar cells already partially resolve this issue since they can be grow
Publikováno v:
Physical Review Applied, 15(2):024031. American Physical Society
By independently engineering strain and composition, this work demonstrates and investigates direct-band-gap emission in the midinfrared range from Ge1-xSnx layers grown on silicon. We extend the room-temperature emission wavelength above approximate
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=narcis______::c57bca081cfe9b1de6832cec9fa3ff06
https://research.tue.nl/nl/publications/6bcf7578-805a-4d43-b93b-99dfc458848d
https://research.tue.nl/nl/publications/6bcf7578-805a-4d43-b93b-99dfc458848d
Autor:
Fadaly, E.M.T., Dijkstra, Alain, Suckert, J.R., Ziss, D., van Tilburg, M.A.J., Ren, Y., Mao, C., van Lange, V.T., Kölling, S., Verheijen, M.A., Busse, D., Rödl, C., Furthmüller, J., Bechstedt, F., Stangl, J., Finley, J.J., Botti, Silvana, Haverkort, J.E.M., Bakkers, E.P.A.M.
Publikováno v:
2021 Silicon Nanoelectronics Workshop
Silicon and Germanium have an indirect band gap, which limits their use in optoelectronic devices. Here, we show that we can create a direct band gap in Si 1-x Ge x alloys by changing the crystal structure from cubic to hexagonal. DFT calculations pr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=narcis______::1ed8240921667e0d44befd101afdd77d
https://research.tue.nl/nl/publications/2ed6ea09-0a79-401e-b584-5e68a59ff52e
https://research.tue.nl/nl/publications/2ed6ea09-0a79-401e-b584-5e68a59ff52e