Zobrazeno 1 - 10
of 52
pro vyhledávání: '"Hauswald, Christian"'
Autor:
Zettler, Johannes K., Corfdir, Pierre, Hauswald, Christian, Luna, Esperanza, Jahn, Uwe, Flissikowski, Timur, Schmidt, Emanuel, Ronning, Carsten, Trampert, Achim, Geelhaar, Lutz, Grahn, Holger T., Brandt, Oliver, Fernández-Garrido, Sergio
Publikováno v:
Nano Letters 2016, 16, 2, 973
The realization of semiconductor structures with stable excitons at room temperature is crucial for the development of excitonics and polaritonics. Quantum confinement has commonly been employed for enhancing excitonic effects in semiconductor hetero
Externí odkaz:
http://arxiv.org/abs/2401.16868
Autor:
Hauswald, Christian
GaN-Nanodrähte können mit einer hohen strukturellen Perfektion auf verschiedenen kristallinen und amorphen Substraten gewachsen werden. Sie bieten somit faszinierende Möglichkeiten, sowohl zur Untersuchung von fundamentalen Eigenschaften des Mater
Externí odkaz:
http://edoc.hu-berlin.de/18452/17816
Autor:
Pfüller, Carsten, Corfdir, Pierre, Hauswald, Christian, Flissikowski, Timur, Kong, Xiang, Zettler, Johannes K., Fernández-Garrido, Sergio, Doğan, Pınar, Grahn, Holger T., Trampert, Achim, Geelhaar, Lutz, Brandt, Oliver
Publikováno v:
Phys. Rev. B 94, 155308 (2016)
We investigate the 3.45-eV luminescence band of spontaneously formed GaN nanowires on Si(111) by photoluminescence and cathodoluminescence spectroscopy. This band is found to be particularly prominent for samples synthesized at comparatively low temp
Externí odkaz:
http://arxiv.org/abs/1607.04036
Autor:
Fernández-Garrido, Sergio, Lähnemann, Jonas, Hauswald, Christian, Korytov, Maxim, Albrecht, Martin, Chèze, Caroline, Skierbiszewski, Czesław, Brandt, Oliver
Publikováno v:
Phys. Rev. Applied 6, 034017 (2016)
We investigate the luminescence of Ga- and N-polar In$_{x}$Ga$_{1-x}$N/In$_{y}$Ga$_{1-y}$N quantum wells (QWs) grown by plasma-assisted molecular beam epitaxy on freestanding GaN as well as 6H-SiC substrates. In striking contrast to their Ga-polar co
Externí odkaz:
http://arxiv.org/abs/1510.06512
Autor:
Hauswald, Christian, Corfdir, Pierre, Zettler, Johannes K., Kaganer, Vladimir M., Sabelfeld, Karl K., Fernández-Garrido, Sergio, Flissikowski, Timur, Consonni, Vincent, Gotschke, Tobias, Grahn, Holger T., Geelhaar, Lutz, Brandt, Oliver
Publikováno v:
Phys. Rev. B 90, 165304 (2014)
We investigate the origin of the fast recombination dynamics of bound and free excitons in GaN nanowire ensembles by temperature-dependent photoluminescence spectroscopy using both continuous-wave and pulsed excitation. The exciton recombination in t
Externí odkaz:
http://arxiv.org/abs/1408.1236
Autor:
Corfdir, Pierre, Zettler, Johannes K., Hauswald, Christian, Fernandez-Garrido, Sergio, Brandt, Oliver, Lefebvre, Pierre
Publikováno v:
Phys. Rev. B 90, 205301 (2014)
We observe unusually narrow donor-bound exciton transitions (0.4 meV) in the photoluminescence spectra of GaN nanowire ensembles grown on Si(111) substrates at very high (> 850 degrees Celsius) temperatures. The spectra of these samples reveal a prom
Externí odkaz:
http://arxiv.org/abs/1407.4279
Autor:
Lähnemann, Jonas, Hauswald, Christian, Wölz, Martin, Jahn, Uwe, Hanke, Michael, Geelhaar, Lutz, Brandt, Oliver
Publikováno v:
J. Phys. D: Appl. Phys. 47, 394010 (2014)
(In,Ga)N insertions embedded in self-assembled GaN nanowires are of current interest for applications in solid state light emitters. Such structures exhibit a notoriously broad emission band. We use cathodoluminescence spectral imaging in a scanning
Externí odkaz:
http://arxiv.org/abs/1405.1507
Autor:
Hauswald, Christian, Flissikowski, Timur, Gotschke, Tobias, Calarco, Raffaella, Geelhaar, Lutz, Grahn, Holger T., Brandt, Oliver
Using time-resolved photoluminescence spectroscopy, we explore the transient behavior of bound and free excitons in GaN nanowire ensembles. We investigate samples with distinct diameter distributions and show that the pronounced biexponential decay o
Externí odkaz:
http://arxiv.org/abs/1308.1799
Autor:
Wölz, Martin, Lähnemann, Jonas, Brandt, Oliver, Kaganer, Vladimir M., Ramsteiner, Manfred, Pfüller, Carsten, Hauswald, Christian, Huang, C. N., Geelhaar, Lutz, Riechert, Henning
Publikováno v:
Nanotechnology 23, 455203 (2012)
GaN nanowire ensembles with axial InGaN multi-quantum wells (MQWs) were grown by molecular beam epitaxy. In a series of samples, we varied the In content in the MQWs from almost zero to about 20%. Within the nanowire ensemble, the MQWs fluctuate stro
Externí odkaz:
http://arxiv.org/abs/1210.7597
Autor:
Limbach, Friederich, Hauswald, Christian, Lähnemann, Jonas, Wölz, Martin, Brandt, Oliver, Trampert, Achim, Hanke, Michael, Jahn, Uwe, Calarco, Raffaella, Geelhaar, Lutz, Riechert, Henning
Publikováno v:
Nanotechnology 23, 46530 (2012)
Light emitting diodes (LEDs) were fabricated using ensembles of free-standing (In,Ga)N/GaN nanowires (NWs) grown on Si substrates in the self-induced growth mode by molecular beam epitaxy. Electron beam induced current analysis, cathodoluminescence a
Externí odkaz:
http://arxiv.org/abs/1210.7144