Zobrazeno 1 - 10
of 1 856
pro vyhledávání: '"Hatzoglou A"'
Autor:
Pan, Shiwei, Li, Chunan, Søreide, Hanne-Sofie, Zhao, Dongdong, Hatzoglou, Constantinos, Qian, Feng, Chen, Long-Qing, Li, Yanjun
Solid-state homogeneous precipitation of nano-sized precipitates is one of the most effective processes to strengthen metal alloys, where the final density and size distribution of precipitates are largely controlled by the precipitation kinetics. He
Externí odkaz:
http://arxiv.org/abs/2407.07404
Autor:
Vurpillot, François, Hatzoglou, Constantinos, Klaes, Benjamin, Rousseau, Loic, Maillet, Jean-Baptiste, Blum, Ivan, Gault, Baptiste, Cerezo, Alfred
Atom probe tomography data is composed of a list of coordinates of the reconstructed atoms in the probed volume. The elemental identity of each atom is derived from time-of-flight mass spectrometry, with no local energetic or chemical information rea
Externí odkaz:
http://arxiv.org/abs/2404.02557
Autor:
Hunnestad, K. A., Das, H., Hatzoglou, C., Holtz, M., Brooks, C. M., van Helvoort, A. T. J., Muller, D. A., Schlom, D. G., Mundy, J. A., Meier, D.
Oxide heterostructures exhibit a vast variety of unique physical properties. Examples are unconventional superconductivity in layered nickelates and topological polar order in (PbTiO$_3$)$_n$/(SrTiO$_3$)$_n$ superlattices. Although it is clear that v
Externí odkaz:
http://arxiv.org/abs/2307.00139
Autor:
Hunnestad, Kasper, Hatzoglou, Constantinos, Vurpillot, Francois, Nylund, Inger-Emma, Yan, Zewu, Bourret, Edith, van Helvoort, Antonius. T. J., Meier, Dennis
Atom probe tomography (APT) is a 3D analysis technique that offers unique chemical accuracy and sensitivity with sub-nanometer spatial resolution. Recently, there is an increasing interest in the application of APT to complex oxides materials, giving
Externí odkaz:
http://arxiv.org/abs/2303.16233
Autor:
Hunnestad, K. A., Schultheiß, J., Mathisen, A. C., Ushakov, I., Hatzoglou, C., van Helvoort, A. T. J., Meier, D.
Polar discontinuities and structural changes at oxide interfaces can give rise to a large variety of electronic and ionic phenomena. Related effects have been intensively studied in epitaxial systems, including ferroelectric domain walls and interfac
Externí odkaz:
http://arxiv.org/abs/2212.07924
Autor:
Kasper A. Hunnestad, Hena Das, Constantinos Hatzoglou, Megan Holtz, Charles M. Brooks, Antonius T. J. van Helvoort, David A. Muller, Darrell G. Schlom, Julia A. Mundy, Dennis Meier
Publikováno v:
Nature Communications, Vol 15, Iss 1, Pp 1-6 (2024)
Abstract Oxide heterostructures exhibit a vast variety of unique physical properties. Examples are unconventional superconductivity in layered nickelates and topological polar order in (PbTiO3)n/(SrTiO3)n superlattices. Although it is clear that vari
Externí odkaz:
https://doaj.org/article/c3cc7380d3a84eb2a3740fc130f8b10e
Autor:
Evdoxia Gogou, Chryssi Hatzoglou, Dimitra Siachpazidou, Sotirios G. Zarogiannis, Konstantinos I. Gourgoulianis
Publikováno v:
BMC Public Health, Vol 24, Iss 1, Pp 1-12 (2024)
Abstract Background Malignant mesothelioma is a rare form of cancer that mostly affects the pleura and has a strong link to asbestos exposure. Greece banned the use of asbestos in 2005, however, the public was already aware of this substance in the 1
Externí odkaz:
https://doaj.org/article/cd1c368ecfc4445da57f112e7597973c
Autor:
Li, Chunan, Marioara, Calin D., Hatzoglou, Constantinos, Andersen, Sigmund J., Holmestad, Randi, Li, Yanjun
Publikováno v:
In Acta Materialia 1 December 2024 281
Autor:
Li, Chunan, Marioara, Calin D., Hatzoglou, Constantinos, Andersen, Sigmund J., Holmestad, Randi, Li, Yanjun
Publikováno v:
In Scripta Materialia 1 March 2025 257
Autor:
Hunnestad, K. A., Hatzoglou, C., Khalid, Z. M., Vullum, P. E., Yan, Z., Bourret, E., van Helvoort, A. T. J., Selbach, S. M., Meier, D.
A small percentage of dopant atoms can completely change the physical properties of the host material. For example, chemical doping controls the electronic transport behavior of semiconductors and gives rise to a wide range of emergent electric and m
Externí odkaz:
http://arxiv.org/abs/2111.00317