Zobrazeno 1 - 10
of 10
pro vyhledávání: '"Hattan Abuzaid"'
Distinct Contact Scaling Effects in MoS2 Transistors Revealed with Asymmetrical Contact Measurements
Autor:
Zhihui Cheng, Jonathan Backman, Huairuo Zhang, Hattan Abuzaid, Guoqing Li, Yifei Yu, Linyou Cao, Albert V. Davydov, Mathieu Luisier, Curt A. Richter, Aaron D. Franklin
Publikováno v:
Advanced Materials, 35 (21)
2D semiconducting materials have immense potential for future electronics due to their atomically thin nature, which enables better scalability. While the channel scalability of 2D materials has been extensively studied, the current understanding of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c481d176a8b45de90e166fd282025492
https://hdl.handle.net/20.500.11850/609691
https://hdl.handle.net/20.500.11850/609691
Autor:
Zhihui Cheng, Huairuo Zhang, Son T. Le, Hattan Abuzaid, Guoqing Li, Linyou Cao, Albert V. Davydov, Aaron D. Franklin, Curt A. Richter
Publikováno v:
ACS Nano. 16:5316-5324
Two-dimensional (2D) van der Waals materials are subject to mechanical deformation and thus forming bubbles and wrinkles during exfoliation and transfer. A lack of interfacial "flatness" has implications for interface properties, such as those formed
Publikováno v:
IEEE Electron Device Letters. 42:1563-1566
Creating metal edge contacts in transition metal dichalcogenide (TMD) transistors is a promising path to advance transistor miniaturization for future technology nodes. Current experimental demonstrations nearly exclusively focus on MoS2 as the chann
Publikováno v:
ACS Appl Mater Interfaces
Two-dimensional (2D) materials offer exciting possibilities for numerous applications, including next-generation sensors and field-effect transistors (FETs). With their atomically thin form factor, it is evident that molecular activity at the interfa
Publikováno v:
DRC
Atomically thin 2D crystals are promising channel materials for extremely scaled field-effect transistors (FETs). For devices at the scaled regime, both channel and contact length must be scaled. However, contacting 2D materials at scaled contact len
Publikováno v:
Applied Physics Letters. 118:030501
The research community has invested heavily in semiconducting two-dimensional (2D) materials, such as transition metal dichalcogenides (TMDs). Their stability when scaled down to a few atoms thick makes them attractive candidates to replace or supple
Autor:
Benjamin J. Wiley, Aaron D. Franklin, Hattan Abuzaid, Harvey Tsang, Mutya A. Cruz, Katherine M. Price, Huayu Tong, Jorge A. Cardenas, Nathan Lazarus
Publikováno v:
Additive Manufacturing. 36:101409
Fused filament fabrication (FFF) is the most widely available 3D printing technology. Recently, a variety of conductive thermoplastic filaments have become commercially available, allowing printing of electronic structures using the technology. Howev
Autor:
Aaron D. Franklin, Yifei Yu, Linyou Cao, Chenggang Tao, Yuh-Chen Lin, Yanlong Li, Hattan Abuzaid, James L. Doherty, Steven Noyce, Fan Zhang, Zhihui Cheng, Nicholas X. Williams
Publikováno v:
2D Materials. 6:034005
Publikováno v:
2013 IEEE MTT-S International Microwave Symposium Digest (MTT).
A multilayer transition and balanced power divider are presented for millimeter-wave system-on-package (SoP). These two components operate at Ka-band and exploit the substrate integrate waveguide (SIW) technology with its shielding characteristics an
Autor:
Zhihui Cheng, Hattan Abuzaid, Yifei Yu, Fan Zhang, Yanlong Li, Steven G Noyce, Nicholas X Williams, Yuh-Chen Lin, James L Doherty, Chenggang Tao, Linyou Cao, Aaron D Franklin
Publikováno v:
2D Materials; Jul2019, Vol. 6 Issue 3, p1-1, 1p