Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Hatsevych, I. M."'
Autor:
Horichok, I. V., Lischynskyy, I. M., Mudryy, S. I., Oberemok, A. S., Semko, T. O., Hatsevych, I. M., Matkivskyy, O. M., Mateyik, G. D., Dzumedzey, R. O.
Publikováno v:
Sensor Electronics and Microsystem Technologies; Том 14, № 3 (2017); 53-64
Сенсорная электроника и микросистемные технологии; Том 14, № 3 (2017); 53-64
Сенсорна електроніка і мікросистемні технології; Том 14, № 3 (2017); 53-64
Сенсорная электроника и микросистемные технологии; Том 14, № 3 (2017); 53-64
Сенсорна електроніка і мікросистемні технології; Том 14, № 3 (2017); 53-64
The results of the research of phase composition and structural state of synthesized by various technological factors polycrystalline ingots of undoped lead telluride and made based on them samples by pressing the powder. Measurement of the temperatu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=scientific_p::adf6b423014c5bb48f6a9836af0c9d16
http://semst.onu.edu.ua/article/view/105564
http://semst.onu.edu.ua/article/view/105564
Autor:
Sabov, T. N., Nikirin, V. A., Hatsevych, I. M., Gudimenko, O. I., Melnyk, V. P., Romanyuk, B. M., Telega, V. M.
Publikováno v:
Physics and Chemistry of Solid State; Vol 16, No 3 (2015); 475-480
Фізика і хімія твердого тіла; Vol 16, No 3 (2015); 475-480
Фізика і хімія твердого тіла; Vol 16, No 3 (2015); 475-480
The electrochromic WO3 and NiO films were deposited by magnetron sputtering on indium tin oxides coated glass. The structural properties of the films were investigated by scanning electron microscopy and X-ray diffractometery techniques. The electroc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=vasylstefany::0c2b161473eb8bdf02c678da1b5ccb91
http://journals.pu.if.ua/index.php/pcss/article/view/779
http://journals.pu.if.ua/index.php/pcss/article/view/779
Autor:
Bunak, S. V., Ilchenko, V. V., Melnik, V. P., Hatsevych, I. M., Romanyuk, B. N., Shkavro, A. G., Tretyak, O.V.
Publikováno v:
Semiconductor Physics, Quantum Electronics & Optoelectronics; 2011, Vol. 14 Issue 2, p241-246, 6p