Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Hassane Ouazzani Chahdi"'
Autor:
Ali Soltani, Brahim Benbakhti, S. J. Duffy, K. Ahmeda, Hassane Ouazzani Chahdi, M. Boucherta, Karol Kalna, Nour Eddine Bourzgui, Weidong Zhang, M. Mattalah
Publikováno v:
IEEE Transactions on Electron Devices
IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers, 2020, 67 (5), pp.1924-1930. ⟨10.1109/TED.2020.2980329⟩
IEEE Transactions on Electron Devices, 2020, 67 (5), pp.1924-1930. ⟨10.1109/TED.2020.2980329⟩
IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers, 2020, 67 (5), pp.1924-1930. ⟨10.1109/TED.2020.2980329⟩
IEEE Transactions on Electron Devices, 2020, 67 (5), pp.1924-1930. ⟨10.1109/TED.2020.2980329⟩
International audience; A new parametric and cost-effective technique is developed to decouple the mechanisms behind current degradation in AlGaN/GaN high-electron mobility transistors (HEMTs) under a normal device operation: self-heating and charge
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4f18a38a0d83dd4626902e1f32bf9687
https://doi.org/10.1109/ted.2020.2980329
https://doi.org/10.1109/ted.2020.2980329
Autor:
Maghnia Mattalah, Brahim Benbakhti, Nour Eddine Bourzgui, Hassane Ouazzani Chahdi, J.-C. Gerbedoen, Abdelatif Jaouad, Ali Soltani
Publikováno v:
IEEE Transactions on Nanotechnology
IEEE Transactions on Nanotechnology, Institute of Electrical and Electronics Engineers, 2020, 19, pp.682-688. ⟨10.1109/TNANO.2020.3019916⟩
IEEE Transactions on Nanotechnology, 2020, 19, pp.682-688. ⟨10.1109/TNANO.2020.3019916⟩
IEEE Transactions on Nanotechnology, Institute of Electrical and Electronics Engineers, 2020, 19, pp.682-688. ⟨10.1109/TNANO.2020.3019916⟩
IEEE Transactions on Nanotechnology, 2020, 19, pp.682-688. ⟨10.1109/TNANO.2020.3019916⟩
Rectifying Titanium Nitride (TiN) gate contact technology is developed for AlGaN $/$ GaN based micro and nanometer HEMTs. A high compressive strain occurring in thinner TiN films (ranging from 5 nm to 60 nm), deposited by sputtering, leads to a reduc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::bc95025a6b77e9e7dde36444d3d987a0
https://hal.archives-ouvertes.fr/hal-03322826
https://hal.archives-ouvertes.fr/hal-03322826
Autor:
Jean-Paul Salvestrini, Vincent Aubry, David Danovitch, Nour-Eddine Bourzgui, Hassane Ouazzani Chahdi, Yacine Halfaya, Abdallah Ougazzaden, Paul L. Voss, Suresh Sundaram, Hassan Maher, Omar Helli, Leo Breuil, Ali Soltani
Publikováno v:
2019 IEEE SENSORS
2019 IEEE SENSORS, Oct 2019, Montreal, Canada. IEEE, pp.1-4, 2020, Proceedings of 18th IEEE Sensors Conference, IEEE SENSORS 2019, ⟨10.1109/SENSORS43011.2019.8956568⟩
2019 IEEE SENSORS, Oct 2019, Montreal, Canada. pp.1-4, ⟨10.1109/SENSORS43011.2019.8956568⟩
2019 IEEE SENSORS, Oct 2019, Montreal, Canada. IEEE, pp.1-4, 2020, Proceedings of 18th IEEE Sensors Conference, IEEE SENSORS 2019, ⟨10.1109/SENSORS43011.2019.8956568⟩
2019 IEEE SENSORS, Oct 2019, Montreal, Canada. pp.1-4, ⟨10.1109/SENSORS43011.2019.8956568⟩
International audience; Gas sensors based on AlGaN/GaN transistors are fabricated using platinum gate to detect and to quantify H2 (1.5-10%) and O2 (1.5-100%) species at high temperature (500 °C). The metrics ΔI/Δt measured within the 5 first seco
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f6313c2196ae885033a28aea2594c216
https://doi.org/10.1109/sensors43011.2019.8956568
https://doi.org/10.1109/sensors43011.2019.8956568