Zobrazeno 1 - 10
of 13
pro vyhledávání: '"Hassane OUAZZANI"'
Autor:
Ammar Oudy, Hassane Ouazzani, Muhammad Ouabid, Hicham El Messbahi, Mustapha Elabouyi, Afaf Amine, Hind El Haibi
Publikováno v:
Journal of African Earth Sciences. 202:104939
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e7b7e433ed60a8253fa2e1c46dd89837
https://doi.org/10.1016/j.jafrearsci.2023.104939
https://doi.org/10.1016/j.jafrearsci.2023.104939
Autor:
Ali Soltani, Brahim Benbakhti, S. J. Duffy, K. Ahmeda, Hassane Ouazzani Chahdi, M. Boucherta, Karol Kalna, Nour Eddine Bourzgui, Weidong Zhang, M. Mattalah
Publikováno v:
IEEE Transactions on Electron Devices
IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers, 2020, 67 (5), pp.1924-1930. ⟨10.1109/TED.2020.2980329⟩
IEEE Transactions on Electron Devices, 2020, 67 (5), pp.1924-1930. ⟨10.1109/TED.2020.2980329⟩
IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers, 2020, 67 (5), pp.1924-1930. ⟨10.1109/TED.2020.2980329⟩
IEEE Transactions on Electron Devices, 2020, 67 (5), pp.1924-1930. ⟨10.1109/TED.2020.2980329⟩
International audience; A new parametric and cost-effective technique is developed to decouple the mechanisms behind current degradation in AlGaN/GaN high-electron mobility transistors (HEMTs) under a normal device operation: self-heating and charge
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4f18a38a0d83dd4626902e1f32bf9687
https://doi.org/10.1109/ted.2020.2980329
https://doi.org/10.1109/ted.2020.2980329
Autor:
Maghnia Mattalah, Brahim Benbakhti, Nour Eddine Bourzgui, Hassane Ouazzani Chahdi, J.-C. Gerbedoen, Abdelatif Jaouad, Ali Soltani
Publikováno v:
IEEE Transactions on Nanotechnology
IEEE Transactions on Nanotechnology, Institute of Electrical and Electronics Engineers, 2020, 19, pp.682-688. ⟨10.1109/TNANO.2020.3019916⟩
IEEE Transactions on Nanotechnology, 2020, 19, pp.682-688. ⟨10.1109/TNANO.2020.3019916⟩
IEEE Transactions on Nanotechnology, Institute of Electrical and Electronics Engineers, 2020, 19, pp.682-688. ⟨10.1109/TNANO.2020.3019916⟩
IEEE Transactions on Nanotechnology, 2020, 19, pp.682-688. ⟨10.1109/TNANO.2020.3019916⟩
Rectifying Titanium Nitride (TiN) gate contact technology is developed for AlGaN $/$ GaN based micro and nanometer HEMTs. A high compressive strain occurring in thinner TiN films (ranging from 5 nm to 60 nm), deposited by sputtering, leads to a reduc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::bc95025a6b77e9e7dde36444d3d987a0
https://hal.archives-ouvertes.fr/hal-03322826
https://hal.archives-ouvertes.fr/hal-03322826
Autor:
Abdelaziz Boutsougame, Lahcen El Youssfi, Hlima Aassine, Soufiane Khuili, Sidi Imad Cherkaoui, Hassane Ouazzani, Mustapha Alaoui
Publikováno v:
E3S Web of Conferences, Vol 337, p 01007 (2022)
The AguelmamAzegza lake is located in the Middle Atlas mountain range, this region consists of carbonate rocks of Lias. It is the best-watered and richest region in Morocco in terms of wetlands, especially natural lakes, rivers and fresh springs. The
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::00ff4a2c68d9333e95e3f5149a82f9eb
https://doi.org/10.1051/e3sconf/202233701007
https://doi.org/10.1051/e3sconf/202233701007
Akademický článek
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Autor:
Jean-Paul Salvestrini, Vincent Aubry, David Danovitch, Nour-Eddine Bourzgui, Hassane Ouazzani Chahdi, Yacine Halfaya, Abdallah Ougazzaden, Paul L. Voss, Suresh Sundaram, Hassan Maher, Omar Helli, Leo Breuil, Ali Soltani
Publikováno v:
2019 IEEE SENSORS
2019 IEEE SENSORS, Oct 2019, Montreal, Canada. IEEE, pp.1-4, 2020, Proceedings of 18th IEEE Sensors Conference, IEEE SENSORS 2019, ⟨10.1109/SENSORS43011.2019.8956568⟩
2019 IEEE SENSORS, Oct 2019, Montreal, Canada. pp.1-4, ⟨10.1109/SENSORS43011.2019.8956568⟩
2019 IEEE SENSORS, Oct 2019, Montreal, Canada. IEEE, pp.1-4, 2020, Proceedings of 18th IEEE Sensors Conference, IEEE SENSORS 2019, ⟨10.1109/SENSORS43011.2019.8956568⟩
2019 IEEE SENSORS, Oct 2019, Montreal, Canada. pp.1-4, ⟨10.1109/SENSORS43011.2019.8956568⟩
International audience; Gas sensors based on AlGaN/GaN transistors are fabricated using platinum gate to detect and to quantify H2 (1.5-10%) and O2 (1.5-100%) species at high temperature (500 °C). The metrics ΔI/Δt measured within the 5 first seco
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f6313c2196ae885033a28aea2594c216
https://doi.org/10.1109/sensors43011.2019.8956568
https://doi.org/10.1109/sensors43011.2019.8956568
Publikováno v:
digitAR-Revista Digital de Arqueologia, Arquitectura e Artes; N.º 5 (2018): digitAR nº 5; 69-81
digitAR-Digital Journal of Archaeology, Architecture and Arts; No. 5 (2018); 69-81
digitAR-Revista Digital de Arqueologia, Arquitectura e Artes; Núm. 5 (2018); 69-81
digitAR-Digital Journal of Archaeology, Architecture and Arts; No. 5 (2018); 69-81
digitAR-Revista Digital de Arqueologia, Arquitectura e Artes; Núm. 5 (2018); 69-81
Le présent travail, se réfère à la chaîne volcanique du Moyen Atlas qui présente un intérêt géologique et pédagogique important (laboratoire volcanologique à ciel ouvert), ce qui doit être valorisé à des fins éducatives, récréatives
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5b7efd019492a7044d765c784487eff8
https://impactum-journals.uc.pt/digitar/article/view/_5_3
https://impactum-journals.uc.pt/digitar/article/view/_5_3
Publikováno v:
Bulletin de la Société Géologique de France. 172:587-602
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b79f68d6791477d4953aa485c7373938
https://doi.org/10.2113/172.5.587
https://doi.org/10.2113/172.5.587
Publikováno v:
Comptes Rendus de l'Académie des Sciences - Series IIA - Earth and Planetary Science. 327:449-456
In the western High Atlas, major volcanic activity supplied andesitic and dacitic lava and pyroclastic flows interbedded with pelitic sandstones and limestones. All these formations were isoclinally folded and metamorphosed into the greenschist facie
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ef9bdec7e8d3e816af48847ee4484474
https://doi.org/10.1016/s1251-8050(99)80072-x
https://doi.org/10.1016/s1251-8050(99)80072-x