Nanoscale Non-Destructive Semiconductor Dopant Characterization and Failure Analysis

Autor: Hassan Tanbakuchi

Publikováno v: ECS Transactions. 27:151-156

The non-destructive semiconductor dopant characterization and failure analysis has been an important and elusive measurement challenge to date. We have employed the vector network analyzer (VNA) as the measurement engine to address the nano scale ele

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::7e0639a1e32b90f760e58bcca4a5fc54
https://doi.org/10.1149/1.3360611

Semiconductor Material and Device Characterization via Scanning Microwave Microscopy

Autor: Matthew R. Richter, Hassan Tanbakuchi, Ferry Kienberger, Georg Gramse, Michael Dieudonne, Manuel Kasper

Publikováno v: 2013 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS).

The advent of the new nano-scale high speed materials and devices require metrology tools capable of characterization at the operating frequency range with nano-scale resolution. The non-destructive measurement of dopant profile and carrier concentra

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::7d18c1c479c43fff4043bafbdeefd3c0
https://doi.org/10.1109/csics.2013.6659245

Microwave reflectometry : a high-resolution technique for measuring vibration of capacitive microresonators

Autor: Didier Theron, Benjamin Walter, Damien Ducatteau, Hassan Tanbakuchi, Bernard Legrand

Publikováno v: Proceedings of 17th International Conference on Solid-State Sensors, Actuators and Microsystems, TRANSDUCERS 2013
17th International Conference on Solid-State Sensors, Actuators and Microsystems, TRANSDUCERS 2013
17th International Conference on Solid-State Sensors, Actuators and Microsystems, TRANSDUCERS 2013, 2013, Barcelona, Spain. paper M3P.140, 566-569, Outstanding poster presentation award nomination, ⟨10.1109/Transducers.2013.6626829⟩

The paper proposes a novel technique for measuring the vibration of capacitive microelectromechanical resonators. Based on microwave reflectometry in the gigahertz range, the technique offers signal-to-noise ratio greater than 100 dB for the studied

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::83f2d12bd65585268c68ea50e0697e6c
https://hal.archives-ouvertes.fr/hal-00877759

Quantitative measurement of electric properties on the nanometer scale using atomic force microscopy

Autor: Peter Hinterdorfer, Ferry Kienberger, H. P. Huber, Matthias A. Fenner, Hassan Tanbakuchi

Publikováno v: 2011 Semiconductor Conference Dresden.

We describe a method to measure capacitances and dopant densities with a nanometer scale spatial resolution. It is implemented using an atomic force microscope with a conductive tip interfaced with a microwave vector network analyzer. A microwave sig

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::605b9362306d8ab2b7e71ad28c04d016
https://doi.org/10.1109/scd.2011.6068750

Calibrated nanoscale capacitance measurements using a scanning microwave microscope

Autor: Yoo Jin Oh, Kurt Schilcher, Ferry Kienberger, Jürgen Smoliner, Thomas M. Wallis, Hassan Tanbakuchi, Peter Hinterdorfer, M. Hochleitner, Michael Dieudonne, H. P. Huber, Manuel Moertelmaier, Chin-Jen Chiang, Pavel Kabos, S. J. Rosner, Atif Imtiaz

Publikováno v: The Review of scientific instruments. 81(11)

A scanning microwave microscope (SMM) for spatially resolved capacitance measurements in the attofarad-to-femtofarad regime is presented. The system is based on the combination of an atomic force microscope (AFM) and a performance network analyzer (P

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::bbbf8e3e6ce2a61c5809858224b162f9
https://pubmed.ncbi.nlm.nih.gov/21133472