Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Hassan Shamloo"'
Publikováno v:
IEEE Transactions on Nanotechnology. 18:890-895
Bilayer graphene like monolayer graphene has a zero bandgap. To use as a channel material of FETs, its band gap should be open which is crucial for its application in logic circuits. Several methods have been developed to open the band gap in graphen
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::103f3a9f3962edd4aaf1e9a83132a095
https://doi.org/10.1109/tnano.2019.2936521
https://doi.org/10.1109/tnano.2019.2936521
Publikováno v:
Superlattices and Microstructures. 111:262-272
Bilayer graphene has a zero bandgap as the same as monolayer graphene, and thus behaves like a semimetal. Recent studies have shown different methods for opening bandgap of bilayer graphene. One of the opening bandgap methods is using graphene nanori
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::73d5f4c1432b794b958cad4e9df860be
https://doi.org/10.1016/j.spmi.2017.06.039
https://doi.org/10.1016/j.spmi.2017.06.039
Publikováno v:
Physics Letters A. 384:126170
In this work, a new structure of single layer armchair graphene nanoribbon field effect transistor with the Stone–Wales (SW) defect (SWGNRFET) is studied. The simulations are solved with Poisson–Schrodinger equation self-consistently by using Non
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8d5c17812a5c1467c6a87a7dc84440ab
https://doi.org/10.1016/j.physleta.2019.126170
https://doi.org/10.1016/j.physleta.2019.126170
Publikováno v:
Superlattices and Microstructures. 86:483-492
Graphene nanoribbon field effect transistors are promising devices for beyond-CMOS nanoelectronics. Graphene is a semiconductor material with zero bandgap and its bandgap must be changed. One of the opening bandgap methods is using graphene nanoribbo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4ccb04924d922b9a958ccbb35aeb0bde
https://doi.org/10.1016/j.spmi.2015.08.018
https://doi.org/10.1016/j.spmi.2015.08.018