Zobrazeno 1 - 10
of 27
pro vyhledávání: '"Hassan Hirshy"'
Autor:
Feiyuan Yang, Manikant Singh, Michael J. Uren, Trevor Martin, Hassan Hirshy, Michael A. Casbon, Paul J. Tasker, Martin Kuball
Publikováno v:
Yang, F, Singh, M, Uren, M J, Martin, T, Hirshy, H, Casbon, M A, Tasker, P J & Kuball, M H H 2022, ' Study of Drain Injected Breakdown Mechanisms in AlGaN/GaN-on-SiC HEMTs ', IEEE Transactions on Electron Devices, vol. 69, no. 2, pp. 525-530 . https://doi.org/10.1109/TED.2021.3138841
Breakdown mechanism in 0.25- μm gate length AlGaN/GaN-on-SiC iron doped high electron mobility transistors (HEMTs) with background carbon is investigated through the drain current injection technique. The measurement results reveal that it can be di
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f3ca233eed2baeccec73cb21cf0fffc6
https://hdl.handle.net/1983/3283c4bc-0388-4eba-b261-c7a9ab00d31d
https://hdl.handle.net/1983/3283c4bc-0388-4eba-b261-c7a9ab00d31d
Autor:
Jonathan Lees, Peter A. Houston, Alexander Alt, K. B. Lee, Peng Chen, Sheng Jiang, Michael A. Casbon, Paul J. Tasker, Hassan Hirshy
Envelope tracking (ET) is a promising power amplifier (PA) architecture for current and future communications systems, which uses dynamic modulation of the supply voltage to provide high efficiency and potentially very wide bandwidth over a large dyn
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::974f30ea3c6ebc46b7e1d796e591b8a9
https://orca.cardiff.ac.uk/id/eprint/121919/1/gain_variation.pdf
https://orca.cardiff.ac.uk/id/eprint/121919/1/gain_variation.pdf
Autor:
Michael J. Uren, Martin Kuball, James W Pomeroy, Khaled Elgaid, Hassan Hirshy, Hareesh Chandrasekar, Paul J. Tasker, A. Eblabla, Michael A. Casbon
Publikováno v:
Chandrasekar, H, Uren, M, Casbon, M A, Hirshy, H, Eblabla, A, Elgaid, K, Pomeroy, J, Tasker, P & Kuball, M 2019, ' Quantifying Temperature-dependent Substrate Loss in GaN-on-Si RF Technology ', IEEE Transactions on Electron Devices, vol. 66, no. 4, 8641454, pp. 1681-1687 . https://doi.org/10.1109/TED.2019.2896156
Intrinsic limits to temperature-dependent substrate loss for GaN-on-Si technology, due to the change in resistivity of the substrate with temperature, are evaluated using an experimentally validated device simulation framework. Effect of room tempera
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a08c4e4448985376a6d291d4e07b0fee
Autor:
Martin Kuball, Richard Marc Perks, Manikant Singh, Michael J. Uren, Hassan Hirshy, Paul J. Tasker, Trevor P. Martin, Michael A. Casbon
Publikováno v:
Hirshy, H, Singh, M, Casbon, M A, Perks, R M, Uren, M J, Martin, T, Kuball, M & Tasker, P J 2018, ' Evaluation of Pulsed I-V Analysis as Validation Tool of Nonlinear RF Models of GaN-Based HFETs ', IEEE Transactions on Electron Devices, vol. 65, no. 12, 8494785, pp. 5307-5313 . https://doi.org/10.1109/TED.2018.2872513
This paper evaluates the applicability of pulsed I – V measurements as a tool for accurately extracting nonlinear gallium nitride (GaN)-based heterojunction field-effect transistor (HFET) models. Two wafers with the identical layer structure but di
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c97b8fa5d93cf0b47e884981c2f0c6aa
https://research-information.bris.ac.uk/ws/files/187081836/Full_text_PDF_final_published_version_.pdf
https://research-information.bris.ac.uk/ws/files/187081836/Full_text_PDF_final_published_version_.pdf
Publikováno v:
Applied Physics Letters. 118:163501
AlGaN/GaN High Electron Mobility Transistors (HEMTs) frequently show an UV-induced increase in channel conductivity (persistent photoconductivity—PPC). PPC is a generic effect that exists for a wide range of HEMT configurations irrespective of the
Autor:
Michael A. Casbon, Khaled Elgaid, Abdalla Eblabla, Michael J. Uren, Paul J. Tasker, Hareesh Chandrasekar, Hassan Hirshy, Martin Kuball
Publikováno v:
Chandrasekar, H, Uren, M J, Eblabla, A, Hirshy, H, Casbon, M A, Tasker, P J, Elgaid, K & Kuball, M 2018, ' Buffer Induced Current-Collapse in GaN HEMTs on Highly Resistive Si Substrates ', IEEE Electron Device Letters, vol. 39, no. 10, pp. 1556-1559 . https://doi.org/10.1109/LED.2018.2864562
We demonstrate that the highly-resistive Si substrate in GaN-on-Si RF HEMTs does not act as an insulator, but instead behaves as a conductive ground plane for static operation and can cause significant back-gate induced current collapse. Substrate ra
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9d46c1c0a3b7873ebc91c7ed074e1b53
https://research-information.bris.ac.uk/en/publications/334d20b6-6f7c-4ef6-b80c-e9498aa387e6
https://research-information.bris.ac.uk/en/publications/334d20b6-6f7c-4ef6-b80c-e9498aa387e6
Self-aligned flexible organic thin-film transistors with gates patterned by nano-imprint lithography
Autor:
Christine Prietl, R. Ferrini, R. Jiawook, Frederic Zanella, A. Drost, Kris Myny, Jan Genoe, Barbara Stadlober, Roger Pretot, Roland Schmied, Hassan Hirshy, Herbert Gold, U. Kleb, Johanna Kraxner, Alexander Fian, Robert Muller, M. König, Ki-Dong Lee, N. Marjanović, Anja Haase, J. Ring, Bernd Striedinger
Publikováno v:
Organic Electronics. 22:140-146
Many applications that rely on organic electronic circuits still suffer from the limited switching speed of their basic elements - the organic thin film transistor (OTFT). For a given set of materials the OTFT speed scales inversely with the square o
Morphological and electrical comparison of Ti and Ta based ohmic contacts for AlGaN/GaN-on-SiC HFETs
Autor:
Trevor P. Martin, Martin Kuball, Johan Bergsten, Richard Marc Perks, Michael J. Uren, Richard F. Webster, Niklas Rorsman, Hassan Hirshy, Dave Cherns, Paul J. Tasker, Alexander Pooth
Publikováno v:
Pooth, A, Bergsten, J, Rorsman, N, Hirshy, H, Perks, R, Tasker, P, Martin, T, Webster, R F, Cherns, D, Uren, M J & Kuball, M 2017, ' Morphological and electrical comparison of Ti and Ta based ohmic contacts for AlGaN/GaN-on-SiC HFETs ', Microelectronics Reliability, vol. 68, pp. 2-4 . https://doi.org/10.1016/j.microrel.2016.11.002
The morphology and impact on leakage currents of two different ohmic metal stacks for GaN based transistor devices is investigated in this work. The results have implications for the performance and reliability of a GaN transistor device. A low tempe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::36443253fd571fd21256501ebdf2d1d5
https://hdl.handle.net/1983/6efe82d0-cdc1-46c9-84d8-4fa98110ac2d
https://hdl.handle.net/1983/6efe82d0-cdc1-46c9-84d8-4fa98110ac2d
Autor:
Ekaterin Minev, Stefan Simeonov Dimov, V. Velkova, Hassan Hirshy, Steffen Scholz, G. Lalev, Fuad Omar
Publikováno v:
CIRP Journal of Manufacturing Science and Technology. 4:340-346
This paper presents a cost effective route for serial fabrication of 3D structures and the achievement of function and length scale integration (FLSI) in products. A complex 3D functional pattern was designed and then used to validate this route for
Autor:
V. Velkova, Jukka Hast, Steffen Scholz, Herbert Gold, Barbara Stadlober, Anja Haase, G. Lalev, Hassan Hirshy, Stefan Simeonov Dimov, Johanna Hiitola-Keinänen
Publikováno v:
Velkova, V, Lalev, G, Hirshy, H, Scholz, S, Hiitola-Keinänen, J, Gold, H, Haase, A, Hast, J, Stadlober, B & Dimov, S 2010, ' Design and validation of a novel master-making process chain for organic and large area electronics on flexible substrates ', Microelectronic Engineering, vol. 87, no. 11, pp. 2139-2145 . https://doi.org/10.1016/j.mee.2010.01.015
Microelectronic Engineering
Microelectronic Engineering
This paper presents a novel process chain for fabrication of replication masters for serial manufacture. The proposed process chain is validated for serial fabrication of (large area) organic electronic devices on flexible substrates. The advantages