Zobrazeno 1 - 10
of 19
pro vyhledávání: '"Hassan El Dirani"'
Autor:
Sorin Cristoloveanu, Joris Lacord, Sébastien Martinie, Carlos Navarro, Francisco Gamiz, Jing Wan, Hassan El Dirani, Kyunghwa Lee, Alexander Zaslavsky
Publikováno v:
Micromachines, Vol 12, Iss 12, p 1540 (2021)
This paper reviews the recently-developed class of band-modulation devices, born from the recent progress in fully-depleted silicon-on-insulator (FD-SOI) and other ultrathin-body technologies, which have enabled the concept of gate-controlled electro
Externí odkaz:
https://doaj.org/article/440c7a0d85674a7ea400eb3feaf2eb17
Publikováno v:
IEEE Electron Device Letters. 40:1852-1855
The capability of Z2-FET (Zero Impact Ionization and Zero Subthreshold Slope FET) to operate as a sharp logic switch is demonstrated in advanced FD-SOI (Fully Depleted SOI) technology. The operation mechanism is band-modulation which enables remarkab
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c0558679b8e3bf8f415b9a536c5e9fa6
https://doi.org/10.1109/led.2019.2939665
https://doi.org/10.1109/led.2019.2939665
Autor:
Carlos Navarro, Maryline Bawedin, Sorin Cristoloveanu, Philippe Galy, Carlos Marquez, Santiago Navarro, Hassan El Dirani, Francisco Gamiz, Andy Pickering
Publikováno v:
IEEE Electron Device Letters
IEEE Electron Device Letters, Institute of Electrical and Electronics Engineers, 2018, 39 (5), pp.660-663. ⟨10.1109/LED.2018.2819801⟩
Digibug. Repositorio Institucional de la Universidad de Granada
instname
IEEE Electron Device Letters, Institute of Electrical and Electronics Engineers, 2018, 39 (5), pp.660-663. ⟨10.1109/LED.2018.2819801⟩
Digibug. Repositorio Institucional de la Universidad de Granada
instname
In this letter, a functional Z2-FET DRAM memory matrix is experimentally demonstrated for the first time. Word-level operation with simultaneous reading and programming accesses is successfully proved. Disturbance is also explored, and the results de
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b5fe4352b3c8f977fb3160670743ab1d
https://hal.archives-ouvertes.fr/hal-02006998
https://hal.archives-ouvertes.fr/hal-02006998
Autor:
Joris Lacord, Campbell Millar, Mukta Singh Parihar, Pascal Fonteneau, Hassan El Dirani, Yong Tae Kim, Sorin Cristoloveanu, Maryline Bawedin, Jean-Charles Barbe, Francisco Gamiz, Noel Rodriguez, Siegfried Karg, Paul Wells, Asen Asenov, Binjie Cheng, Carlos Navarro, M. Duan, Philippe Galy, Cyrille Le Royer, Fikru Adamu-Lema
Publikováno v:
IEEE Transactions on Electron Devices
IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers, 2017, 64 (11), pp.4486-4491. ⟨10.1109/TED.2017.2751141⟩
IEEE Transactions on Electron Devices, 2017, 64 (11), pp.4486-4491. ⟨10.1109/TED.2017.2751141⟩
Digibug. Repositorio Institucional de la Universidad de Granada
instname
IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers, 2017, 64 (11), pp.4486-4491. ⟨10.1109/TED.2017.2751141⟩
IEEE Transactions on Electron Devices, 2017, 64 (11), pp.4486-4491. ⟨10.1109/TED.2017.2751141⟩
Digibug. Repositorio Institucional de la Universidad de Granada
instname
This article has been accepted for publication by IEEE "Navarro Moral, C.; et al. Extended analysis of the Z2-FET: Operation as capacitor-less eDRAM. IEEE Transactions on Electron Devices, 64(11): 4486-4491 (2017). DOI: 10.1109/TED.2017.2751141
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::68bcecf5bf95538fa18e097025f95e0e
https://hal.archives-ouvertes.fr/hal-02006362
https://hal.archives-ouvertes.fr/hal-02006362
Autor:
Sorin Cristoloveanu, Cyrille Le Royer, Binjie Cheng, Pascal Fonteneau, Mukta Singh Parihar, Sebastien Martinie, Yuan Taur, X. Mescot, Francisco Gamiz, Philippe Galy, Jean-Charles Barbe, M. Bawedin, Kyung Hwa Lee, Carlos Navarro, Joris Lacord, Asen Asenov, Hassan El Dirani
Publikováno v:
2017 IMW Proceedings
2017 IEEE International Memory Workshop (IMW)
2017 IEEE International Memory Workshop (IMW), May 2017, Monterey, United States. pp.103-106, ⟨10.1109/IMW.2017.7939093⟩
Publons
2017 IEEE International Memory Workshop (IMW)
2017 IEEE International Memory Workshop (IMW), May 2017, Monterey, United States. pp.103-106, ⟨10.1109/IMW.2017.7939093⟩
Publons
session FRAM and DRAM; International audience; This work highlights the features of Z2-FET capacitorless 1T-DRAM describing its operation in detail. The Z2-FET memory cell fabricated with FDSOI technology delivers large current sense margin along wit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7ec32a0d03a9da02ccf3efd69e11d9df
https://hal.archives-ouvertes.fr/hal-02007121
https://hal.archives-ouvertes.fr/hal-02007121
Autor:
Charles-Alex Legrand, Philippe Ferrari, D. Marin-Cudraz, Sorin Cristoloveanu, Yohann Solaro, Hassan El Dirani, Pascal Fonteneau
Publikováno v:
Solid-State Electronics
Solid-State Electronics, Elsevier, 2017, 128, pp.180-186. ⟨10.1016/j.sse.2016.10.008⟩
Solid-State Electronics, Elsevier, 2017, 128, pp.180-186. ⟨10.1016/j.sse.2016.10.008⟩
International audience; A band-modulation device with a free top surface, named Z3-FET (Zero front-gate, Zero swing slope and Zero impact ionization) and fabricated in the most advanced Fully Depleted Silicon-On-Insulator technology, is demonstrated
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3d70f12ffbb0127dde4b01e0af45a52f
https://hal.archives-ouvertes.fr/hal-02003239
https://hal.archives-ouvertes.fr/hal-02003239
Autor:
Cyrille Le Royer, Kyung Hwa Lee, Siegfried Karg, Jean-Charles Barbe, Maryline Bawedin, Pascal Fonteneau, Campbell Millar, Carlos Navarro, Sorin Cristoloveanu, Carlos Sampedro, Paul Wells, Fikru Adamu-Lema, Asen Asenov, Mukta Singh Parihar, Stefan Coseman, Philippe Galy, Seong Il Kim, Hassan El Dirani, Yong Tae Kim, Joris Lacord, Francisco Gamiz, Binjie Cheng, M. Duan, Heike Riel
Publikováno v:
Digibug. Repositorio Institucional de la Universidad de Granada
instname
IEEE Transactions on Electron Devices
IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers, 2017, 64 (12), pp.4904-4909. ⟨10.1109/TED.2017.2759308⟩
IEEE Transactions on Electron Devices, 2017, 64 (12), pp.4904-4909. ⟨10.1109/TED.2017.2759308⟩
instname
IEEE Transactions on Electron Devices
IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers, 2017, 64 (12), pp.4904-4909. ⟨10.1109/TED.2017.2759308⟩
IEEE Transactions on Electron Devices, 2017, 64 (12), pp.4904-4909. ⟨10.1109/TED.2017.2759308⟩
2-D numerical simulations are used to demonstrate the Z2-FET as a competitive embedded capacitorless dynamic random access memory cell for low-power applications. Experimental results in 28-nm fully depleted silicon on insulator technology are used t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::07eb0e9c5af1d71c1af435cd6a2bde00
http://hdl.handle.net/10481/57442
http://hdl.handle.net/10481/57442
Autor:
Sorin Cristoloveanu, Pascal Fonteneau, Hassan El Dirani, Yohann Solaro, Philippe Ferrari, Dominique Golanski, Charles-Alex Legrand, D. Marin-Cudraz
Publikováno v:
Solid-State Electronics
Solid-State Electronics, Elsevier, 2016, 125, pp.103-110. ⟨10.1016/j.sse.2016.07.018⟩
Solid-State Electronics, Elsevier, 2016, 125, pp.103-110. ⟨10.1016/j.sse.2016.07.018⟩
International audience; A band-modulation device is demonstrated experimentally in advanced FDSOI (Fully Depleted SOI). The Z2-FET (Zero Impact Ionization and Zero Subthreshold Slope FET) is a very recent sharp switching device which achieves remarka
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::75d9da66d0b06600ce7280ca509f39a5
https://hal.archives-ouvertes.fr/hal-02003135
https://hal.archives-ouvertes.fr/hal-02003135
Publikováno v:
Solid-State Electronics
Solid-State Electronics, Elsevier, 2016, 115, pp.201-206. ⟨10.1016/j.sse.2015.08.015⟩
Solid-State Electronics, Elsevier, 2016, 115, pp.201-206. ⟨10.1016/j.sse.2015.08.015⟩
International audience; This paper presents a systematic study of Z2-FET (Zero Subthreshold Swing and Zero Impact Ionization transistor) fabricated in advanced Fully Depleted Silicon On Insulator (FDSOI) 28 nm technology with Ultra-Thin Body and Buri
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3e0d5c8051d7133dc4b9bf9dd567686d
https://hal.archives-ouvertes.fr/hal-02003188
https://hal.archives-ouvertes.fr/hal-02003188
Autor:
Sorin Cristoloveanu, Sebastien Martinie, Maryline Bawedin, Hyung Jin Park, Hassan El Dirani, Yuan Taur, Jean-Charles Barbe, Kyung Hwa Lee, Joris Lacord, Yue Xu, Mukta Singh Parihar
Publikováno v:
Solid-State Electronics
Solid-State Electronics, Elsevier, 2018, 143, pp.41-48. ⟨10.1016/j.sse.2017.12.007⟩
Solid-State Electronics, 2018, 143, pp.41-48. ⟨10.1016/j.sse.2017.12.007⟩
Solid-State Electronics, Elsevier, 2018, 143, pp.41-48. ⟨10.1016/j.sse.2017.12.007⟩
Solid-State Electronics, 2018, 143, pp.41-48. ⟨10.1016/j.sse.2017.12.007⟩
International audience; A systematic study to model and characterize the band-modulation Z2-FET device is developed bringing light to the relevance of the carrier lifetime influence. This work provides guidelines to optimize the Z2-FETs for sharp swi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::fece3717f934425bbd9d6d589ff26f52