Zobrazeno 1 - 10
of 132
pro vyhledávání: '"Hassan, Maher"'
Autor:
Olivier Richard, Ali Soltani, Rahma Adhiri, Ali Ahaitouf, Hassan Maher, Vincent Aimez, Abdelatif Jaouad
Publikováno v:
Results in Materials, Vol 24, Iss , Pp 100645- (2024)
Controlling properties of GaN/dielectric interfaces is crucial for determining the characteristics of MOS-HEMT devices and their stability. Interface properties are largely affected by the techniques and specific conditions of dielectric deposition.
Externí odkaz:
https://doaj.org/article/2d40b276e8784715ab9bff4587614b66
Autor:
Zahraa Zaidan, Nedal Al Taradeh, Mohammed Benjelloun, Christophe Rodriguez, Ali Soltani, Josiane Tasselli, Karine Isoird, Luong Viet Phung, Camille Sonneville, Dominique Planson, Yvon Cordier, Frédéric Morancho, Hassan Maher
Publikováno v:
Micromachines, Vol 15, Iss 10, p 1223 (2024)
This paper introduces a novel technology for the monolithic integration of GaN-based vertical and lateral devices. This approach is groundbreaking as it facilitates the drive of high-power GaN vertical switching devices through lateral GaN HEMTs with
Externí odkaz:
https://doaj.org/article/eb3c607c6c2d47e2a7cb1bd993e89e67
Autor:
Mohammed Benjelloun, Zahraa Zaidan, Ali Soltani, Noelle Gogneau, Denis Morris, Jean-Christophe Harmand, Hassan Maher Maher
Publikováno v:
IEEE Access, Vol 11, Pp 40249-40257 (2023)
A new vertical transistor structure based on GaN nanowire is designed and optimized using the TCAD-Santaurus tool with an electrothermal model. The studied structure with quasi-1D drift region is adapted to GaN nanowires synthesized with the bottom-u
Externí odkaz:
https://doaj.org/article/f184cc81cef341438010285919eef7a0
Autor:
Atse Julien Eric N’Dohi, Camille Sonneville, Luong Viet Phung, Thi Huong Ngo, Philippe De Mierry, Eric Frayssinet, Hassan Maher, Josiane Tasselli, Karine Isoird, Frédéric Morancho, Yvon Cordier, Dominique Planson
Publikováno v:
AIP Advances, Vol 12, Iss 2, Pp 025126-025126-5 (2022)
N-doped homo-epitaxial GaN samples grown on freestanding GaN substrates have been investigated by micro-Raman spectroscopy. Quantitative analysis of the E2h and the A1(LO) modes’ behavior has been performed while intentionally increasing the carrie
Externí odkaz:
https://doaj.org/article/b8a22a4da0b34db798cd30537951cf86
Autor:
Atse Julien Eric N’Dohi, Camille Sonneville, Soufiane Saidi, Thi Huong Ngo, Philippe De Mierry, Eric Frayssinet, Yvon Cordier, Luong Viet Phung, Frédéric Morancho, Hassan Maher, Dominique Planson
Publikováno v:
Crystals, Vol 13, Iss 5, p 713 (2023)
In this work, the physical and the electrical properties of vertical GaN Schottky diodes were investigated. Cathodo-luminescence (CL), micro-Raman spectroscopy, SIMS, and current-voltage (I-V) measurements were performed to better understand the effe
Externí odkaz:
https://doaj.org/article/91c3a1a3a0664ea1aa2d397f3ff1e1cf
Autor:
Moustafa, Amr Farouk Ibrahim a, ⁎, Kamal, Eman Faker b, Hassan, Maher M. c, Sakr, Mona d, Gomaa, Mohammed Mohammed Mohammed a
Publikováno v:
In The Egyptian Journal of Radiology and Nuclear Medicine March 2018 49(1):259-264
Autor:
Guillaume Gommé, Adrien Cutivet, Boussairi Bouzazi, Abderrahim Rahim Boucherif, Tom MacElwee, Christophe Rodriguez, Meriem Bouchilaoun, Hubert Pelletier, Philippe-Olivier Provost, Hassan Maher, Richard Ares
Publikováno v:
AIP Advances, Vol 10, Iss 6, Pp 065123-065123-5 (2020)
Thermal and electrical properties of aluminum nitride (AlN) epilayers grown by chemical beam epitaxy (CBE) were investigated. A high growth rate of 5.9 ± 0.4 µm/h was achieved using trimethyl aluminum and ammonia as group III and V precursors, resp
Externí odkaz:
https://doaj.org/article/0e9fb26e01004e3ca334d6f8f0e0e218
Publikováno v:
Micromachines, Vol 12, Iss 11, p 1284 (2021)
In this paper, an AIGaN/GaN metal-oxide-semiconductor high-electron-mobility transistor (MOS-HEMT) device is realized. The device shows normal ON characteristics with a maximum current of 570 mA/mm at a gate-to-source voltage of 3 V, an on-state resi
Externí odkaz:
https://doaj.org/article/0056dc521d4241e89fb0665b8e2bd0c2
Autor:
Gwen Rolland, Christophe Rodriguez, Guillaume Gommé, Abderrahim Boucherif, Ahmed Chakroun, Meriem Bouchilaoun, Marie Clara Pepin, Faissal El Hamidi, Soundos Maher, Richard Arès, Tom MacElwee, Hassan Maher
Publikováno v:
Energies, Vol 14, Iss 19, p 6098 (2021)
In this paper is presented a Normally-OFF GaN HEMT (High Electron Mobility Transistor) device using p-doped GaN barrier layer regrown by CBE (Chemical Beam Epitaxy). The impact of the p doping on the device performance is investigated using TCAD simu
Externí odkaz:
https://doaj.org/article/3d3f7c5ffaf646209be4b4e0e58656ed
Autor:
Nedal Al Taradeh, Eric Frayssinet, Christophe Rodriguez, Frederic Morancho, Camille Sonneville, Luong-Viet Phung, Ali Soltani, Florian Tendille, Yvon Cordier, Hassan Maher
Publikováno v:
Energies, Vol 14, Iss 14, p 4241 (2021)
This paper proposes a new technique to engineer the Fin channel in vertical GaN FinFET toward a straight and smooth channel sidewall. Consequently, the GaN wet etching in the TMAH solution is detailed; we found that the m-GaN plane has lower surface
Externí odkaz:
https://doaj.org/article/8b2a06d400e343b6992add83408b201a