Zobrazeno 1 - 10
of 544
pro vyhledávání: '"Hass, J."'
Autor:
Sprinkle, M., Hicks, J., Tejeda, A., Taleb-Ibrahimi, A., Fèvre, P. Le, Bertran, F., Tinkey, H., Clark, M. C., Soukiassian, P., Martinotti, D., Hass, J., de Heer, W. A., Berger, C., Conrad, E. H.
We review progress in developing epitaxial graphene as a material for carbon electronics. In particular, improvements in epitaxial graphene growth, interface control and the understanding of multilayer epitaxial graphene's electronic properties are d
Externí odkaz:
http://arxiv.org/abs/1001.3869
We present a structural analysis of the graphene-4HSiC(0001) interface using surface x-ray reflectivity. We find that the interface is composed of an extended reconstruction of two SiC bilayers. The interface directly below the first graphene sheet i
Externí odkaz:
http://arxiv.org/abs/0808.1413
Autor:
Hass, J., Varchon, F., Millan-Otoya, J. E., Sprinkle, M., de Heer, W. A., Berger, C., First, P. N., Magaud, L., Conrad, E. H.
We examine the stacking order of multilayer graphene grown on the SiC$(000\bar{1})$ surface using low-energy electron diffraction and surface X-ray diffraction. We show that the films contain a high density of rotational stacking faults caused by thr
Externí odkaz:
http://arxiv.org/abs/0706.2134
Autor:
Hass, J., Feng, R., Millan-Otoya, J. E., Li, X., Sprinkle, M., First, P. N., Berger, C., de Heer, W. A., Conrad, E. H.
We present a structural analysis of the multi-layer graphene-4HSiC(000-1}) system using Surface X-Ray Reflectivity. We show for the first time that graphene films grown on the C-terminated (000-1}) surface have a graphene-substrate bond length that i
Externí odkaz:
http://arxiv.org/abs/cond-mat/0702540
Autor:
Varchon, François, Feng, R., Hass, J., Li, X., Nguyen, Bich N., Naud, Cécile, Mallet, Pierre, Veuillen, Jean Yves, Berger, Claire, Conrad, E. H., Magaud, Laurence
Recent transport measurements on thin graphite films grown on SiC show large coherence lengths and anomalous integer quantum Hall effects expected for isolated graphene sheets. This is the case eventhough the layer-substrate epitaxy of these films im
Externí odkaz:
http://arxiv.org/abs/cond-mat/0702311
Autor:
Hass, J., Jeffrey, C. A., Feng, R., Li, T., Li, X., Song, Z., Berger, C., de Heer, W. A., First, P. N., Conrad, E. H.
With expanding interest in graphene-based electronics, it is crucial that high quality graphene films be grown. Sublimation of Si from the 4H-SiC(0001) Si-terminated) surface in ultrahigh vacuum is a demonstrated method to produce epitaxial graphene
Externí odkaz:
http://arxiv.org/abs/cond-mat/0604206
Akademický článek
Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.
K zobrazení výsledku je třeba se přihlásit.
Autor:
Hass, J.1 (AUTHOR) hass@math.ucdavis.edu, Trnkova, M.1 (AUTHOR) m.d.trnkova@gmail.com
Publikováno v:
Computer Graphics Forum. Aug2020, Vol. 39 Issue 5, p29-40. 12p. 3 Color Photographs, 2 Black and White Photographs, 8 Diagrams, 1 Chart, 5 Graphs.
Publikováno v:
Environmental Health Perspectives, 1980 Jun 01. 36, 125-132.
Externí odkaz:
https://www.jstor.org/stable/3429341
Akademický článek
Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.
K zobrazení výsledku je třeba se přihlásit.