Zobrazeno 1 - 10
of 47
pro vyhledávání: '"Hasibul Alam"'
Autor:
Sayema Chowdhury, Anupam Roy, Chison Liu, Md Hasibul Alam, Rudresh Ghosh, Harry Chou, Deji Akinwande, Sanjay K. Banerjee
Publikováno v:
ACS Omega, Vol 6, Iss 15, Pp 10343-10351 (2021)
Externí odkaz:
https://doaj.org/article/ad3e70e8d01146cda607dd8ff6672588
Autor:
Md Hasibul Alam, Zifan Xu, Sayema Chowdhury, Zhanzhi Jiang, Deepyanti Taneja, Sanjay K. Banerjee, Keji Lai, Maria Helena Braga, Deji Akinwande
Publikováno v:
Nature Communications, Vol 11, Iss 1, Pp 1-9 (2020)
Electrostatic gating of 2D transistors with ionic liquids presents intrinsic limitations. Here, the authors demonstrate n-type MoS2 and p-type WSe2 transistors on a lithium-ion solid electrolyte substrate, displaying sub-threshold values approaching
Externí odkaz:
https://doaj.org/article/e2235d8f8bfd4573a7d4996861da6dd0
Autor:
Hasibul Alam, Emmett Tomai
Publikováno v:
International Journal on Cybernetics & Informatics. 12:109-119
The Internet of Things (IoT) application is visible in all aspects of humans’ day-to-day affairs. The demand for IoT is growing at an unprecedented rate, from wearable wristwatches to autopilot cars. The smart home has also seen significant advance
Autor:
Nikolaos Mavredakis, Anibal Pacheco-Sanchez, Md Hasibul Alam, Anton Guimerà-Brunet, Javier Martinez, Jose Antonio Garrido, Deji Akinwande, David Jiménez
Publikováno v:
Nanoscale. 15:6853-6863
1/f noise is a critical figure of merit for the performance of transistors and circuits. For two-dimensional devices (2D-FETs), and especially for applications in the GHz range where short-channel FETs are required, velocity saturation (VS) effect ca
Autor:
Sayema Chowdhury, Anupam Roy, Md Hasibul Alam, Tanmoy Pramanik, Jessica Depoy, Robert Chrostowski, Filippo Mangolini, Deji Akinwande, Sanjay K. Banerjee
Publikováno v:
ACS Applied Electronic Materials. 4:6133-6141
Autor:
Rayanoothala, Pravallikasree, Hasibul Alam, Sk., Mahapatra, Sunita, Gafur, Abdul, Antonius, Sarjiya
Publikováno v:
Gesunde Pflanzen; Dec2023, Vol. 75 Issue 6, p2207-2225, 19p
Publikováno v:
Proceedings of the Great Lakes Symposium on VLSI 2023.
Publikováno v:
National Academy Science Letters.
Autor:
Md Hasibul Alam, Zifan Xu, Sayema Chowdhury, Zhanzhi Jiang, Deepyanti Taneja, Sanjay K. Banerjee, Keji Lai, Maria Helena Braga, Deji Akinwande
Publikováno v:
Nature Communications, Vol 12, Iss 1, Pp 1-1 (2021)
Externí odkaz:
https://doaj.org/article/9e4eeabf1ca64f91a306e3b4ef7dc6d5
Autor:
Md. Abu Bokor Siddik, Sk Hasibul Alam
Publikováno v:
2023 International Conference on Electrical, Computer and Communication Engineering (ECCE).