Zobrazeno 1 - 10
of 26
pro vyhledávání: '"Haseok Jeon"'
Publikováno v:
Acta Materialia. 61:6736-6742
This study explored the possibility of employing a bi-layer barrier of electroless-plated Ni(P)/thin Cu layers in a Cu/Sn/Cu bonding structure for three-dimensional interconnects. Our materials analysis revealed that the bi-layer barrier served effec
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::805806f830da443c859687ccb8dc7f13
https://doi.org/10.1016/j.actamat.2013.07.043
https://doi.org/10.1016/j.actamat.2013.07.043
Publikováno v:
Journal of Alloys and Compounds. 563:124-129
In this study, we systematically investigated the effects of employing Group IV-B metals (Ti, Zr, and Hf) in place of Ga in GaInZnO films by fabricating XInZnO films (X = Ti, Zr, or Hf) with a various ratio of the Group IV-B elements. Materials chara
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::851bbcd9018633a680e9117ee32b03d5
https://doi.org/10.1016/j.jallcom.2012.12.105
https://doi.org/10.1016/j.jallcom.2012.12.105
Autor:
Sekwon Na, Stephen Dongmin Kang, Seong-jae Jeon, Seungmin Hyun, Haseok Jeon, Hoo-Jeong Lee, Ho-Ki Lyeo
Publikováno v:
Journal of Alloys and Compounds. 553:343-349
This paper reports the results of a study on the microstructure evolution of sputtered BiSb–Te thermoelectric films during post-annealing and its effects on their electronic transport and thermoelectric properties. Combining X-ray diffraction, tran
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0020ac063d65648698b9f66e9868cde0
https://doi.org/10.1016/j.jallcom.2012.11.040
https://doi.org/10.1016/j.jallcom.2012.11.040
Autor:
Chee-Hong An, Mi Ran Moon, Donggeun Jung, Sekwon Na, Hoo-Jeong Lee, Haseok Jeon, Hyoungsub Kim
Publikováno v:
Applied Microscopy. 42:212-217
This paper reports the effects of post-annealing of ZnO thin films on their microstructure and the device performance of the transistors fabricated from the films. From X-ray diffraction and transmission electron microscopy characterization, we uncov
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5e53cd1c6d0615fa0ef96afe25224875
https://doi.org/10.9729/am.2012.42.4.212
https://doi.org/10.9729/am.2012.42.4.212
Autor:
Donggeun Jung, Hyoungsub Kim, Jun-Mo Yang, Tae Hun Lee, Sekwon Na, Mi Ran Moon, Hoo-Jeong Lee, Haseok Jeon
Publikováno v:
Surface and Interface Analysis. 44:1431-1435
This study examined the possibility of engineering the microstructure of InGaZnO films and enhancing the device performance of their thin film transistors by combining the thermal treatments of substrate heating and post-annealing. Microstructure cha
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::974298b57de46b8b4958ab5571c5d1c8
https://doi.org/10.1002/sia.4968
https://doi.org/10.1002/sia.4968
Publikováno v:
Journal of Electronic Materials. 41:109-114
This study examined the thermal stability of an electroless-plated Ni(P) barrier layer inserted between Sn and Cu in the bonding structure of Cu/Sn/Cu for three-dimensional (3D) interconnect applications. A combination of transmission electron micros
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cfeee6cf6307d51379780cc50d66679f
https://doi.org/10.1007/s11664-011-1759-x
https://doi.org/10.1007/s11664-011-1759-x
Publikováno v:
Journal of Electronic Materials. 41:60-66
This study examined the sensitive effects of composition on the microstructure evolution and thermoelectric properties of sputtered Bi-Te films. Bi-Te films of various Te compositions (49 at.% to 60 at.%) were grown by cosputtering deposition and ann
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::67ac7199ecbba1b41a8c4e95ff4a4b92
https://doi.org/10.1007/s11664-011-1751-5
https://doi.org/10.1007/s11664-011-1751-5
Publikováno v:
Microelectronic Engineering. 88:541-544
This paper reports the microstructure evolution of Bi-Te thermoelectric films upon post-annealing and its effects on the thermoelectric properties. Bi-Te films with the composition of around 61at.% Te and the thickness of 300nm were deposited onto Si
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c82c1eaa73bf29663584adb8693457d7
https://doi.org/10.1016/j.mee.2010.06.036
https://doi.org/10.1016/j.mee.2010.06.036
Publikováno v:
Journal of The Electrochemical Society. 159:H85-H89
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dc2966f6b2ae2578c1af96ee61e838e6
https://doi.org/10.1149/2.007202jes
https://doi.org/10.1149/2.007202jes
Autor:
Jong Hyun Ahn, Haseok Jeon, Byung-Sung Kim, Nae-Eung Lee, Youn J. Kim, Hoo Jeong Lee, Kyungyea Park, Dongmok Whang, Deok Kyou Lee
Publikováno v:
Advanced Functional Materials. 20:3577-3582
Stretchable and transparent thin film transistors (TFTs) with intrisically brittle oxide semiconductors are built using a wavy structural configuration that can provide high flexibility and stretchability. After device fabrication procedures includin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e373996cf5af5a034fcd2195c16addb7
https://doi.org/10.1002/adfm.201001107
https://doi.org/10.1002/adfm.201001107