Zobrazeno 1 - 10
of 41
pro vyhledávání: '"Hasan Raza Ansari"'
Autor:
Md. Hasan Raza Ansari, Nazek El-Atab
Publikováno v:
IEEE Access, Vol 12, Pp 128810-128815 (2024)
This work showcases the implementation of 16 Boolean logic functions through a double-gate (DG) fully depleted (FD) Silicon-on-Insulator (SOI) Metal-Oxide-Semiconductor-Field-Effect-Transistor (MOSFET). The DG-FD-SOI device with an independent gate o
Externí odkaz:
https://doaj.org/article/29b752bdb2a743bb82877015fa1952de
Autor:
Ayman Rezk, Md. Hasan Raza Ansari, Kayaramkodath Chandran Ranjeesh, Safa Gaber, Dayanand Kumar, Areej Merhi, Bilal R. Kaafarani, Mohamed Ben Hassine, Nazek El-Atab, Dinesh Shetty, Ammar Nayfeh
Publikováno v:
Scientific Reports, Vol 13, Iss 1, Pp 1-13 (2023)
Abstract There is a growing interest in new semiconductor nanostructures for future high-density high-performance flexible electronic devices. Two-dimensional conjugated microporous polymers (2D-CMPs) are promising candidates because of their inheren
Externí odkaz:
https://doaj.org/article/3e5c02e67c064a6fa710039c3a59be11
Autor:
Dongyeon Kang, Jun Tae Jang, Shinyoung Park, Md. Hasan Raza Ansari, Jong-Ho Bae, Sung-Jin Choi, Dong Myong Kim, Changwook Kim, Seongjae Cho, Dae Hwan Kim
Publikováno v:
IEEE Access, Vol 9, Pp 59345-59352 (2021)
Hardware-oriented neuromorphic computing is gaining great deal of interest for highly parallel data processing and superb energy efficiency, as the candidate for replacement of conventional von Neumann computing. In this work, a novel synaptic transi
Externí odkaz:
https://doaj.org/article/5006e47f327244c5b1389b94aa625031
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 9, Pp 1282-1289 (2021)
In this work, a synaptic device for neuromorphic system is proposed and designed to emulate the biological behaviors in the novel device structure of core-shell dual-gate (CSDG) nanowire flash memory. Floating-body effect in the device and charge tra
Externí odkaz:
https://doaj.org/article/867c223c6c194f2bb12d904341c96356
Publikováno v:
IEEE Transactions on Electron Devices. 70:1344-1350
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3ef615fb62b63f624a94900cea80b782
https://doi.org/10.1109/ted.2023.3234018
https://doi.org/10.1109/ted.2023.3234018
Publikováno v:
Nanomaterials, Vol 11, Iss 7, p 1773 (2021)
This work showcases the physical insights of a core-shell dual-gate (CSDG) nanowire transistor as an artificial synaptic device with short/long-term potentiation and long-term depression (LTD) operation. Short-term potentiation (STP) is a temporary p
Externí odkaz:
https://doaj.org/article/a854bc8e79ce4485879e16032563e758
Publikováno v:
Nanomaterials, Vol 11, Iss 4, p 832 (2021)
Two-dimensional materials have garnered interest from the perspectives of physics, materials, and applied electronics owing to their outstanding physical and chemical properties. Advances in exfoliation and synthesis technologies have enabled prepara
Externí odkaz:
https://doaj.org/article/99d401805ded4957bba1c3f6474e582b
Optimization of Performance Metrics of Charge Trapping Synaptic Device for Neuromorphic Applications
Autor:
Md. Hasan Raza Ansari, Nazek El-Atab
Publikováno v:
2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dfe1955504a0feae3b999cd25b18ca19
https://doi.org/10.1109/edtm55494.2023.10103084
https://doi.org/10.1109/edtm55494.2023.10103084
Publikováno v:
2022 IEEE International Conference on Emerging Electronics (ICEE).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::86ccc1b99ba001f86cfd858efebf0a9d
https://doi.org/10.1109/icee56203.2022.10118253
https://doi.org/10.1109/icee56203.2022.10118253
Autor:
Tae-Hyeon Kim, Byung-Gook Park, Sungmin Hwang, Suhyun Bang, Md. Hasan Raza Ansari, Dong Keun Lee, Seongjae Cho, Min-Hwi Kim
Publikováno v:
IEEE Transactions on Electron Devices. 68:4411-4417
In recent days, more hardware-driven artificial intelligence system capable of brain-like low-energy consumption is gaining ever-increasing interest. The hardware-driven property lies in the low-power synaptic device and its array along with the area
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a55f4caa9c8b2ed184b4ae281e5c5cd0
https://doi.org/10.1109/ted.2021.3099769
https://doi.org/10.1109/ted.2021.3099769