Zobrazeno 1 - 10
of 60
pro vyhledávání: '"Hasan Efeoglu"'
Autor:
Melik Gul, Hasan Efeoglu
Publikováno v:
Journal of Materials Science: Materials in Electronics. 33:7423-7434
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0a273af268c64853df08a3af39cf2a1d
https://doi.org/10.1007/s10854-022-07864-z
https://doi.org/10.1007/s10854-022-07864-z
Publikováno v:
Silicon. 14:3493-3500
In this work, we investigated and compared the difference in temperature dependence of ideality values, barrier heights, and series resistances obtained using current-voltage (I-V) characteristics from various methods for Cu/n-type Si structures in t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d5d3235f1b340118c820c3748c2213f7
https://doi.org/10.1007/s12633-021-01132-1
https://doi.org/10.1007/s12633-021-01132-1
Autor:
Hasan EFEOGLU, Abdulmecit Turut
Publikováno v:
Journal of Vacuum Science & Technology B. 41:022207
We have discussed the thermal sensing capability under a constant current level and current versus voltage ( I–V) traces by measuring the temperature of high series resistance Pt/ n-GaP/Al/Ti Schottky structures in the 100−320 K range. The Rs val
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9c8f094ae40239b72c7ab8b38a018113
https://doi.org/10.1116/6.0002411
https://doi.org/10.1116/6.0002411
Publikováno v:
Materials Today: Proceedings. 46:7030-7032
The interface state densities of Cu/CuO/n-Si Schottky structure were investigated by current–voltage (I-V) and capacitance–voltage (C-V) measurements using Roderick and Card’s methods in the temperature range 50–310 K. The interface state den
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::99c533b47aa960c58476952eed5f6175
https://doi.org/10.1016/j.matpr.2021.03.285
https://doi.org/10.1016/j.matpr.2021.03.285
Publikováno v:
Journal of Nanoelectronics and Optoelectronics. 14:1083-1087
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eaefa44ae21cadc61bc0f869b90d3702
https://doi.org/10.1166/jno.2019.2615
https://doi.org/10.1166/jno.2019.2615
Publikováno v:
Journal of Optics. 48:214-219
Silicon crystal in porous state can be featured by some extra optical properties. The method widely used in the literature for porous formation is anodic anodization technique due to its simplicity and ease of construction of the measurement cell. Ho
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a9bda5da3ae0e8ba95ce7705f379f899
https://doi.org/10.1007/s12596-019-00513-5
https://doi.org/10.1007/s12596-019-00513-5
Autor:
Hasan Efeoglu
Memristor as claimed to be fourth two terminal passive devices in electronics. Experimental realization memristor by HP research group is getting much more attention due to its potential applications. However, in reality this device with its unique p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7c5e13c4703bc2ebd31d100cf8b62c46
https://aperta.ulakbim.gov.tr/record/230228
https://aperta.ulakbim.gov.tr/record/230228
Autor:
Ozgur, Polat, Mustafa, Coskun, Hasan, Efeoglu, Mujdat, Caglar, Fatih M, CoŞkun, Yasemin, Caglar, Abdulmecit, Turut
Publikováno v:
Journal of physics. Condensed matter : an Institute of Physics journal.
The perovskite ytterbium ferrite is a new ferroelectric semiconductor material. We presented the temperature induced current-voltage (I-V) characteristics of the Al/YbFeO3-δ/p-Si/Al hetero-junction. The orthoferrite YbFeO3-δ thin films were deposit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::8fb195fd0cde9f282d873c93b7568b08
https://pubmed.ncbi.nlm.nih.gov/32957089
https://pubmed.ncbi.nlm.nih.gov/32957089
Autor:
Fatih Gul, Hasan Efeoglu
Publikováno v:
Ceramics International. 43:10770-10775
In this study, direct-current reactive sputtered ZnO and ZnO1-x based thin film (30 nm and 300 nm in thickness) memristor devices were produced and the effects of oxygen vacancies and thickness on the memristive characteristics were investigated. The
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e39b047ab25a5306c0d0468a4cc140e2
https://doi.org/10.1016/j.ceramint.2017.05.090
https://doi.org/10.1016/j.ceramint.2017.05.090
Publikováno v:
Sensors and Actuators A: Physical. 260:24-28
In this study, the temperature response of ZnO thin film is investigated in an attempt to enhance its pyroelectric performance. The film is formed on PS and Si substrates utilizing RF&DC magnetron sputtering deposition technique. The outcome of study
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e56833e484e04c0905bc1deedcc9fff1
https://doi.org/10.1016/j.sna.2017.04.007
https://doi.org/10.1016/j.sna.2017.04.007