Zobrazeno 1 - 10
of 13
pro vyhledávání: '"Hasan A. Yetkin"'
Autor:
Donald Valenta, Hasan Arif Yetkin, Tim Kodalle, Jakob Bombsch, Raul Garcia‐Diez, Claudia Hartmann, Shigenori Ueda, Roberto Félix, Johannes Frisch, Lucas Bodenstein‐Dresler, Regan G. Wilks, Christian A. Kaufmann, Marcus Bär
Publikováno v:
Advanced Materials Interfaces, Vol 11, Iss 13, Pp n/a-n/a (2024)
Abstract Sputter‐deposited GaOx (i.e., oxygen‐deficient gallium oxide) films are evaluated as a potential replacement for the standard CdS buffer layers in Cu(In,Ga)Se2 (CIGSe) based thin‐film photovoltaics. The energy level alignment at the Ga
Externí odkaz:
https://doaj.org/article/e86b7412d85a4050acde412c67d4516c
Autor:
Jens Wenzel Andreasen, Joachim Breternitz, Marcus Bär, Phillip J. Dale, Mirjana Dimitrievska, David J. Fermin, Nicole Fleck, Charles J. Hages, Yevhenii Havryliuk, Cara Hawkins, Rafael Jaramillo, Seán R. Kavanagh, Prakriti Kayastha, Rokas Kondrotas, Vaidehi Lapalikar, Sreekanth Mandati, David B. Mitzi, Charlotte Platzer Björkman, Christopher Savory, Jonathan J. S. Scragg, Byungha Shin, Susanne Siebentritt, Mohit Sood, Devendra Tiwari, Matias Valdes, Aron Walsh, Thomas P. Weiss, Young Won Woo, Rachel Woods-Robinson, Hasan Arif Yetkin
Publikováno v:
Faraday Discussions. 239:180-201
Autor:
Raphael Agbenyeke, Jens Wenzel Andreasen, Nada Benhaddou, Jake W. Bowers, Joachim Breternitz, Marcus Bär, Mirjana Dimitrievska, David J. Fermin, Alex Ganose, Cara Hawkins, Rafael Jaramillo, Seán R. Kavanagh, Rokas Kondrotas, Jonathan D. Major, Sreekanth Mandati, Adair Nicolson, Charlotte Platzer Björkman, Christopher Savory, David O. Scanlon, Susan Schorr, Jonathan J. S. Scragg, Alice Sheppard, Byungha Shin, Susanne Siebentritt, Mohit Sood, Kostiantyn V. Sopiha, Nicolae Spalatu, Jiang Tang, Aron Walsh, Thomas P. Weiss, Rachel Woods-Robinson, Hasan Arif Yetkin
Publikováno v:
Faraday Discussions. 239:375-404
Autor:
Florian Ruske, Hasan A. Yetkin, Rutger Schlatmann, Ibrahim Simsek, Ruslan Muydinov, Reiner Klenk, Alejandra Villanueva Tovar, Bernd Szyszka, Tobias Bertram, Marin Rusu, Tim Kodalle, Christian A. Kaufmann, Josefa Ibaceta-Jaña
Publikováno v:
IEEE Journal of Photovoltaics. 11:648-657
In this contribution, the impact of thermal stress on Cu(In,Ga)Se $_{2}$ (CIGSe) thin film photovoltaic devices is investigated. The tolerance of such devices to high temperatures is of particular interest for processing transparent conductive oxides
Autor:
Reiner Klenk, Hasan A. Yetkin, Christian A. Kaufmann, Rutger Schlatmann, Tobias Bertram, Alejandra Villanueva Tovar, Tim Kodalle
Publikováno v:
IEEE Journal of Photovoltaics. 11:232-240
We present a comprehensive device model for Cu(In,Ga)Se $_{2}$ (CIGSe) thin-film solar cells based on numerical SCAPS-1D simulations. The model reproduces the experimentally determined current-voltage and capacitance-voltage characteristics of a Rb-f
Autor:
Christian A. Kaufmann, Robert Wenisch, Bünyamin Ümsür, Tobias Bertram, Iver Lauermann, Hasan A. Yetkin, Natalia Maticiuc, I. Majumdar, Rutger Schlatmann, Yajie Wang, Tim Kodalle
In conventional Cu(In,Ga)Se2 (CIGSe) solar cells a chemical bath deposited CdS thin film is used as a buffer layer. However, it is desired to replace CdS due to the toxicity of cadmium and the rather narrow bandgap energy of CdS. Zn(O,S) is considere
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6ba3bea68dfc242683d8211b9e19320e
http://www.helmholtz-berlin.de/pubbin/oai_publication?VT=1&ID=104172
http://www.helmholtz-berlin.de/pubbin/oai_publication?VT=1&ID=104172
Autor:
Hasan A. Yetkin, Christian A. Kaufmann, Rutger Schlatmann, Reiner Klenk, Tobias Bertram, Marin Rusu, Tim Kodalle, Bernd Szyszka, Alejandra Villanueva-Tovar
Due to their tunable bandgap energy, Cu(In,Ga)Se2 (CIGSe) thin‐film solar cells are an attractive option for use as bottom devices in tandem configurations. In monolithic tandem devices, the thermal stability of the bottom device is paramount for r
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b1b23b270e1e57ccfb54d50344395750
http://www.helmholtz-berlin.de/pubbin/oai_publication?VT=1&ID=103726
http://www.helmholtz-berlin.de/pubbin/oai_publication?VT=1&ID=103726
Autor:
Tobias Bertram, Robert Wenisch, Tim Kodalle, Rutger Schlatmann, Daniel Abou-Ras, I. Majumdar, Christian A. Kaufmann, Iver Lauermann, Natalia Maticiuc, Bünyamin Ümsür, Yajie Wang, N. Schäfer, Hasan A. Yetkin
Photovoltaic devices based on Cu(In,Ga)Se2 (CIGSe) absorbers are among the most attractive non-Si alternatives. The key to their steadily increasing efficiency is a post-deposition treatment (PDT) with alkali salts. For co-evaporated CIGSe, a RbF-PDT
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0bd6f9ba95ae32cf645a3a9dc520bee2
http://www.helmholtz-berlin.de/pubbin/oai_publication?VT=1&ID=103739
http://www.helmholtz-berlin.de/pubbin/oai_publication?VT=1&ID=103739
Autor:
Christian A. Kaufmann, Tim Kodalle, Tobias Bertram, Hasan A. Yetkin, Bernd Szyszka, Alejandra Villanueva-Tovar, Rutger Schlatmann, Reiner Klenk
Publikováno v:
2020 47th IEEE Photovoltaic Specialists Conference (PVSC).
In this contribution the impact of thermal stress on Cu(In,Ga)Se 2 (CIGSe) thin film photovoltaic devices is investigated. The tolerance of such devices to high temperatures is of particular interest for their potential use as bottom devices in tande
Publikováno v:
2020 47th IEEE Photovoltaic Specialists Conference (PVSC).
A comprehensive device model based on SCAPS-1D simulations is presented that reproduces the experimentally determined current-voltage and capacitance-voltage characteristics of a Rb-free reference, a sample that underwent an RbF-treatment, and a samp