Etching of high-k dielectric HfO2 films in BCl3-containing plasmas enhanced with O-2 addition

Autor: Kitagawa, T, Nakamura, K, Osari, K, Takahashi, K, Ono, K, Oosawa, M, Hasaka, S, Inoue, M

Publikováno v: JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS. 45(8-11):L297-L300

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=jairo_______::caa19dc99dc57d36c8d88fe50f7fbeef
http://hdl.handle.net/2433/35077

DEVELOPMENT OF UNIVERSAL VIRTUAL SPECTRSCOPE FOR OPTO-ELECTRONICS RESEARCH: FIRST PRINCIPLES SOFTWARE REPLACING DIELECTRIC CONSTANT MEASUREMENTS.

Autor: HAMADA, T., YAMAMOTO, T., MOMIDA, H., UDA, T., OHNO, T., TAJIMA, N., HASAKA, S., INOUE, M., KOBAYSAHI, N.

Publikováno v: Foundations of Quantum Mechanics in the Light of New Technology: Isqm-Tokyo '05 - Proceedings of the 8th International Symposium; 2006, p262-265, 4p

Application of Atmospheric Plasma Abatement System for Exhausted Gas from MEMS Etching Process.

Autor: Hattori, K., Sakurai, K., Watanabe, N., Mangyou, H., Hasaka, S., Shibuya, K.

Publikováno v: 2006 IEEE International Symposium on Semiconductor Manufacturing; 2006, p39-42, 4p

Thermal budget reduction and throughput enhancement for CMOS Epi stressors via wet clean interface contamination evaluation and control.

Autor: Brabant, P., Chung, K., Shinriki, M., Hasaka, S., Scott, D., Wirzbicki, M., Francis, T., Hong He, Sadana, D.K.

Publikováno v: Advanced Semiconductor Manufacturing Conference (ASMC), 2011 22nd Annual IEEE/SEMI; 2011, p1-3, 3p

Minimizing damage and contamination in RIE processes by extracted-plasma-parameter analysis.

Autor: Yamashita, T., Hasaka, S., Natori, I., Fukui, H., Ohmi, T.

Publikováno v: IEEE Transactions on Semiconductor Manufacturing; 1992, Vol. 5 Issue 3, p223-233, 11p