Zobrazeno 1 - 10
of 26
pro vyhledávání: '"Harvey C. Nathanson"'
Autor:
Stephen Van Campen, R. Christopher Clarke, Jonathan Hawk, Robert M. Young, Harvey C. Nathanson, Robert S. Howell, Bettina Nechay, Eric J. Stewart, Eric M. Graves, Scott B. Miserendino, Timothy T. Braggins
Publikováno v:
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 28:1060-1065
The authors demonstrate for the first time the injection of electrons across an n-type to p-type silicon junction and their subsequent tunneling from approximately 1 μm tall p-type silicon points into a vacuum gap. The diffusive flow of these minori
Autor:
Anant K. Agarwal, Maurice H. Hanes, M.C. Driver, Terence W O'keeffe, J.R. Szedon, R.R. Siergiej, H.M. Hobgood, T.J. Smith, Harvey C. Nathanson, C.D. Brandt, R.N. Thomas
Publikováno v:
IEEE International SOI Conference.
Publikováno v:
Proceedings., IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits.
A description is given of the Westinghouse RF Wafer-Scale Integration (RFWSI) program, a novel approach to controlling the cost of fighter aircraft radar modules. The technologies required for the program include three implants of silicon into 3-inch
Autor:
H.M. Hobgood, Maurice H. Hanes, P.G. McMullin, A.K. Agarwal, J.R. Szedon, R.N. Thomas, Harvey C. Nathanson, Terence W O'keeffe, M.C. Driver, T.J. Smith
Publikováno v:
International Electron Devices Meeting 1991 [Technical Digest].
An advanced silicon technology is presented which is capable of producing highly reliable and affordable MMICs (monolithic microwave integrated circuits) integrated with high-speed CMOS digital functions as replacements for costly GaAs hybrids curren
Autor:
Maurice H. Hanes, R.R. Siergiej, J.R. Szedon, Harvey C. Nathanson, Terence W O'keeffe, T.J. Smith, M.C. Driver, R.N. Thomas, P.G. McMullin, H.M. Hobgood, Anant K. Agarwal
Publikováno v:
IEEE Electron Device Letters. 14:219-221
An improved silicon-on-insulator (SOI) approach offers devices and circuits operating to 10 GHz by providing formerly unattainable capabilities in bulk silicon: reduced junction-to-substrate capacitances in FETs and bipolar transistors, inherent elec
Publikováno v:
IEEE Transactions on Electron Devices. 21:785-798
The recently developed large-area field-emission photocathode is described. It consists of a finely spaced array of point emitters fabricated by etching of p-type silicon or other semiconductor. Uniform emission over areas of 6-7 cm2have been obtaine
Publikováno v:
IEEE Transactions on Electron Devices. 22:765-775
A completely sealed-off electron beam-addressed light valve offering high reliability, low thermal impedance, and low-voltage operation is described. It is suitable for projection displays and is capable of producing bright high-contrast images with
Autor:
Harvey C. Nathanson, D.K. Schroder
Publikováno v:
Solid-State Electronics. 13:577-582
A significant component of reverse current can occur due to lateral surface depletion effects in pulsed MOS capacitor experiments. This component of surface current is approximately proportional to the space-charge region width and can therefore appe
Publikováno v:
IEEE Transactions on Electron Devices. 14:117-133
A device is described which permits high- Q frequency selection to be incorporated into silicon integrated circuits. It is essentially an electrostatically excited tuning fork employing field-effect transistor "readout." The device, which is called t
Autor:
Harvey C. Nathanson
Publikováno v:
Solid-State Electronics. 8:349-363
Single junction insulated-gate silicon triodes exhibiting very high d.c. voltage gain are described. These planar devices consist of a high resistivity n type substrate into which is diffused a p region of suitably high surface concentration. An alum