Zobrazeno 1 - 10
of 31
pro vyhledávání: '"Harv Mahan"'
Publikováno v:
In Thin Solid Films 2008 516(5):526-528
Publikováno v:
Thin Solid Films. 519:4455-4458
A determination of the steady state nucleation rate r n in thermally annealed a-Si:H has typically been performed using TEM, where the increase in grain density with isothermal sample anneal time can be directly observed for samples with small crysta
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5811f403375ff61cea684b2a0d967103
https://doi.org/10.1016/j.tsf.2011.01.332
https://doi.org/10.1016/j.tsf.2011.01.332
Autor:
A. Harv Mahan, D. L. Williamson, S. Phil Ahrenkiel, David A. Ginley, Tining Su, Lynn Gedvilas, P.A. Parilla, Yueqin Xu
Publikováno v:
Advanced Functional Materials. 19:2338-2344
Utilizing the concepts of a critical crystallite size and local film inhomogeneity, it is shown that nucleation in thermally annealed hydrogenated amorphous silicon occurs in the more well ordered spatial regions in the network, which are defined by
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1654486bb7f66e93d21a76093295196f
https://doi.org/10.1002/adfm.200801709
https://doi.org/10.1002/adfm.200801709
Publikováno v:
Thin Solid Films. 517:3591-3595
Hot-wire chemical vapor deposition (HWCVD) has been employed as an economically scalable method for the deposition of crystalline molybdenum oxide nanoparticles at high density. Under optimal synthesis conditions, only crystalline nanostructures with
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5a80072f45ad9f43ba1a77ea33533587
https://doi.org/10.1016/j.tsf.2009.01.061
https://doi.org/10.1016/j.tsf.2009.01.061
Autor:
Anne C. Dillon, Shengbai Zhang, Erin Whitney, Dane Gillaspie, Se-Hee Lee, Yong-Hyun Kim, A. Harv Mahan, Rohit Deshpande, Philip A. Parilla, Kim M. Jones
Publikováno v:
Advanced Materials. 20:3627-3632
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::69a35c5733b62746fb4dfce81e89b137
https://doi.org/10.1002/adma.200800999
https://doi.org/10.1002/adma.200800999
Autor:
R. Bauer, A. Harv Mahan, Eugene Iwaniczko, Yueqin Xu, Qi Wang, Howard M. Branz, Charles W. Teplin, T.H. Wang, Matthew Page, David L. Young, Pauls Stradins, L. Roybal
Publikováno v:
Thin Solid Films. 516:743-746
Our research aiming to improve silicon photovoltaic materials and devices extensively utilizes hot-wire chemical vapor deposition (HWCVD). We have recently achieved 18.2% heterojunction silicon solar cells by applying HWCVD a-Si:H front and back cont
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b8854603f938a0a620f5cf7d1d062b9c
https://doi.org/10.1016/j.tsf.2007.06.115
https://doi.org/10.1016/j.tsf.2007.06.115
Autor:
Anne C. Dillon, Se-Hee Lee, Rohit Deshpande, Bobby To, A. Harv Mahan, Phil Parilla, Kim M. Jones
Publikováno v:
Advanced Materials. 18:763-766
Electrochromic (EC) materials change their optical properties (darken/lighten) in the presence of a small electric potential difference, and are suitable for application in energy-efficient windows, antiglare automobile rear-view mirrors, sunroofs, d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9b836dbd72e5e3e57f5fcc66915492d8
https://doi.org/10.1002/adma.200501953
https://doi.org/10.1002/adma.200501953
Autor:
K. E. H. Gilbert, Michael J. Heben, Philip A. Parilla, A. Harv Mahan, Jeffery L. Alleman, Kim M. Jones, Anne C. Dillon
Publikováno v:
Nano Letters. 3:1425-1429
Hot wire chemical vapor deposition (HWCVD) has been adapted to be a continuous growth process for high-density carbon multiwall nanotubes (MWNTs). MWNT growth is optimized in 1:5 CH4:Ar at 150 Torr with reactor temperatures of 400 and 550 °C for sta
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::59c5e4a43a1d5469f224b92dbacab7e7
https://doi.org/10.1021/nl0342038
https://doi.org/10.1021/nl0342038
Autor:
Howard M. Branz, Brent P. Nelson, Richard S. Crandall, Robert C. Reedy, Harv Mahan, Yueqin Xu
Publikováno v:
Journal of Non-Crystalline Solids. :191-195
We observe that the charge state of diffusing hydrogen depends upon the electronic Fermi level ( E f ) in hydrogenated amorphous silicon (a-Si:H). We incorporate a thin layer of deuterium ( 2 H) at various positions between the n- and p-layers of i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6e566b6bc5f8a268054caff3c8989783
https://doi.org/10.1016/s0022-3093(01)01161-9
https://doi.org/10.1016/s0022-3093(01)01161-9
Autor:
Jean-Eric Bourée, A. Harv Mahan
Publikováno v:
Thin Solid Films. 519:4409-4411
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7e3abc3ed0a186d996c58e1c98f234a4
https://doi.org/10.1016/j.tsf.2011.01.002
https://doi.org/10.1016/j.tsf.2011.01.002