Zobrazeno 1 - 2
of 2
pro vyhledávání: '"Haruya Mori"'
Autor:
Hiromichi Takano, Katsuhiro Yokota, Toshinori Takagi, Masao Kumagai, Masanori Sakaguchi, Kiyohito Hirai, Masanori Watanabe, Akira Shiomi, Haruya Mori
2keV S + ions were implanted into un-doped semi-insulating GaAs wafers with doses of 3×10 13 -3×10 14 cm -2 at room temperature. The samples were annealed at 850-1000°C after encapsulation with an As-doped a-Si:H film. The sheet carrier concentrat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2790e5f4043f1260044e17b37e47ff19
https://doi.org/10.1016/b978-0-444-82334-2.50174-x
https://doi.org/10.1016/b978-0-444-82334-2.50174-x
Autor:
Masanori Sakaguchi, Hiromichi Takano, Yoshie Fujii, Haruya Mori, Kiyohito Hirai, Akira Shiomi, Masao Kumagai, Katsuhiro Yokota, Akiyoshi Chayahara
Publikováno v:
Japanese Journal of Applied Physics. 35:1624
Sulfur (S) ions are implanted at 500 keV into GaAs through 120 nm a-Si:H films doped with arsenic atoms at a concentration of 2×1020 cm-3. The samples are annealed in Ar gas at temperatures of 700–1000°C for 15 min. The sheet carrier concentratio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::acba75b9c977e730e3c009dbb6249d64
https://doi.org/10.1143/jjap.35.1624
https://doi.org/10.1143/jjap.35.1624
