Zobrazeno 1 - 10
of 127
pro vyhledávání: '"Harus, G. I."'
Autor:
Shelushinina, N. G., Harus, G. I., Charikova, T. B., Petukhov, D. S., Petukhova, O. E., Ivanov, A. A.
The magnetic-field dependencies of the longitudinal and Hall resistivity of the electron-doped compounds $Nd_{2-x}Ce_xCuO_{4+\delta}$ in underdoped region (x=0.14) were investigated. It was established experimentally a strong magnetic field dependenc
Externí odkaz:
http://arxiv.org/abs/1611.10019
Autor:
Charikova, T. B., Shelushinina, N. G., Harus, G. I., Petukhov, D. S., Petukhova, O. E., Ivanov, A. A.
The magnetic-field dependencies of the longitudinal and Hall resistance of the electron-doped compounds Nd$_{2-x}$Ce$_x$CuO$_{4+\delta}$ in underdoped region with $x$=0.14 and with varying degrees of disorder ($\delta$) were investigated. It was esta
Externí odkaz:
http://arxiv.org/abs/1601.04804
Autor:
Charikova, T. B., Shelushinina, N. G., Harus, G. I., Neverov, V. N., Petukhov, D. S., Petukhova, O. E., Ivanov, A. A.
We present the investigation results of the in-plane \{rho}(T) resistivity tensor at the temperature range 0.4-40 K in magnetic fields up to 90kOe (H||c, J||ab) for electron-doped Nd{2-x}Ce{x}CuO{4+{\delta}} with different degree of disorder near ant
Externí odkaz:
http://arxiv.org/abs/1409.0608
Autor:
Charikova, T. B., Shelushinina, N. G., Harus, G. I., Petukhov, D. S., Neverov, V. N., Ivanov, A. A.
We present resistivity measurements of the upper critical field (H$_{c2}$) phase diagram as a function of temperature (T) for Nd$_{1.85}$Ce$_{0.15}$CuO$_{4+\delta}$/SrTiO$_3$ single crystal films with different degree of disorder ($\delta$) in magnet
Externí odkaz:
http://arxiv.org/abs/1212.6118
Autor:
Charikova, T. B., Shelushinina, N. G., Harus, G. I., Petukhov, D. S., Korolev, A. V., Neverov, V. N., Ivanov, A. A.
Transport properties of Nd$_{2-x}$Ce$_x$CuO$_{4+\delta}$ single crystal films are investigated in magnetic fields $B$ up to 9T at $T$=(0.4-4.2)K. An analysis of normal state (at $B>B_{c2}$) Hall coefficient $R_H$$^n$ dependence on Ce doping takes us
Externí odkaz:
http://arxiv.org/abs/1109.6399
Results of low-temperature upper critical field measurements for Nd$_{2-x}$Ce$_x$CuO$_{4+\delta}$ single crystals with various $x$ and nonstoichiometric disorder ($\delta$) are presented. The coherence length of pair correlation $\xi$ and the product
Externí odkaz:
http://arxiv.org/abs/1010.4365
Autor:
Charikova, T. B., Shelushinina, N. G., Harus, G. I., Neverov, V. N., Petukhov, D. S., Sochinskaya, O. E., Ivanov, A. A.
Magnetoresistivity and Hall effect measured in magnetic fields up to B=9T (B||c, J||ab) in electron-doped $Nd_{2-x}$Ce_{x}Cu$O_{4+{\delta}} single crystal films with x = 0.14; 0.15; 0.18 and different oxygen content ({\delta}) were studied in a tempe
Externí odkaz:
http://arxiv.org/abs/1010.0082
Autor:
Arapov, Yu. G., Gudina, S. V., Harus, G. I., Neverov, V. N., Shelushinina, N. G., Yakunin, M. V., Podgornyh, S. M., Uskova, E. A., Zvonkov, B. N.
The resistivity (R) of low mobility dilute 2D-electron gas in a n-InGaAs/GaAs double quantum well (DQW) exhibits the monotonic 'insulating-like' temperature dependence (dR/dT < 0) at T = 1.8 -- 70K in zero magnetic field. This temperature interval co
Externí odkaz:
http://arxiv.org/abs/cond-mat/0512678
Autor:
Arapov, Yu. G., Neverov, V. N., Harus, G. I., Shelushinina, N. G., Yakunin, M. V., Kuznetsov, O. A., de Visser, A., Ponomarenko, L.
For a two-dimensional (2D) hole system (confined within Ge layers of a multilayered p-Ge/Ge_{1-x}Si_x heterostructure) described by Luttinger Hamiltonian with the g-factor highly anisotropic for orientations of magnetic field perpendicular and parall
Externí odkaz:
http://arxiv.org/abs/cond-mat/0404355
Autor:
Yakunin, M. V., Alshanskii, G. A., Arapov, Yu. G., Harus, G. I., Neverov, V. N., Shelushinina, N. G., Kuznetsov, O. A., Zvonkov, B. N., Uskova, E. A., Ponomarenko, L., de Visser, A.
Publikováno v:
Physica E, v.22 (1-3), pp.68-71 (2004).
In In_xGa_{1-x}As/n-GaAs double quantum wells (DQWs) containing an electron gas, the magnetoresistance (MR) peculiarities under parallel magnetic fields caused by the passing of the tunnel gap edges through the Fermi level are revealed. Peculiarities
Externí odkaz:
http://arxiv.org/abs/cond-mat/0306156